Abstract: An antireflective optical film exhibits a quintic refractive index profile with an initial refractive index n.sub.L as close as possible to the refractive index of the incident medium and a final refractive index n.sub.H substantially equal to the refractive index of the substrate. The refractive index profile of the film may be defined by the relationship:n(x)=n.sub.L +(n.sub.H -n.sub.L) (10 (x/T).sup.3 -15( x/T).sup.4 +6( x/T).sup.5)where N(x) is the refractive index of the film at a depth x in the film relative to the incident surface of the film and T is the thickness of the film. The film may also be fabricated as a plurality of layers, with each layer substantially thinner than wavelengths within the spectral band. Each layer within the plurality is divided into a sublayer pair, including a first sublayer with the refractive index n.sub.L and a second sublayer with the refractive index n.sub.

Abstract: Disclosed is an integrated processor assembly and a method for making that assembly, including the steps of providing a semiconducting substrate, fabricating integrated processing circuitry in the substrate, depositing a plurality of input strip lines from a first edge of the substrate to the circuitry, depositing a plurality of output leads from the circuitry to a second edge of the substrate, repeating these steps for a plurality of substrates, and bonding the substrates together so that the terminated input strip lines define a two dimensional array of contact points.

Abstract: A random access memory circuit for use with positive and negative supply voltages, a read enable line, an output line, and write "1" and "0" lines includes first, second, third, and fourth level shifting diodes. A first input isolation diode is connected between the write "1" line and the first level shifting diode. A second input isolation diode is connected between the write "0" line and the cathode of the third level shifting diode. The drain of a first write FET is connected to the anode of the third diode, the source is connected to the read enable line, and the gate is connected to the cathode of the second level shifting diode. A second write FET has its drain connected to the anode of the first level shifting diode, its source connected to the read enable line, and its gate connected to the cathode of the fourth diode. An output buffer FET is connected by its source to the read enable line, by its gate to the cathode of the fourth diode.

Abstract: Disclosed is a blocked-impurity-band detector, including an active layer which is doped with a sufficient amount of either a donor or an acceptor impurity that significant charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of the layer and of holes in the valence band of the layer. A blocking layer is disposed on the active layer and contains a sufficiently low concentration of impurities that significant charge transport cannot occur in the blocking layer except by means of electrons in the conduction band of the layer or holes in the valence band of the layer. First and second electrodes are provided for applying a bias potential across the active and blocking layers.

Abstract: A miniaturized probe is provided for making contact with test probe pads on an integrated circuit. The probe tips are precisely positioned on the underside of a microwave substrate board. Short wires extend through a hole in the insulating board and connect the probe tips to a conductive line on the topside of the microwave substrate board. The wires are imbedded in a potting compound which also holds the probe tips. Precise location of the probe tips is accomplished during fabrication of the probe by using depressions etched in a substrate as a mold and depositing metal in these depressions using photoresist and deposition techniques.

Abstract: A meter is provided which can continuously measure the amount of water in a flowing mixture of water and lithographic ink. The mixture flows between the plates of a capacitor cell. This cell provides capacitance for an audio frequency oscillator. The output frequency of the oscillator is converted to a voltage which is proportional to the output frequency of the oscillator. This voltage is converted to a second voltage which is proportional to the logarithm of the first mentioned voltage and is also proportional to the concentration of water in the mixture. This second voltage is read out in a display device which can be set to read the water content of the mixture of water and ink.

Abstract: The detecting element of a thermoelectric infrared detector consists of p-n junctions of a thermopile which are located on a thin layer of unsupported silicon dioxide. The silicon dioxide spans an opening which extends through a silicon semiconductor substrate. The reference junctions of the thermopile are located above the silicon substrate. The detecting p-n junctions on the thin silicon dioxide above the opening in the substrate have a low heat capacity and respond rapidly to temperature changes, whereas the reference junctions above the thick substrate have a much higher heat capacity and tend to maintain their ambient temperature. The conduction of heat between the detecting p-n junctions and the reference junctions is limited by the thin insulating layer of silicon dioxide which joins the detecting p-n junctions to the substrate under the reference junctions.

Abstract: A socket is provided for testing leadless chip carriers. The socket has a base with a resilient pad. A planar assembly of coaxial cables is positioned above the base so that a terminal contact of each cable is located on the resilient pad in alignment with the contacts on the chip carrier. A frame is coupled to the planar assembly of coaxial cables and to the base. The frame has an opening for receiving and aligning the contacts of the carrier with the contacts of each coaxial cable. The socket has a cover which is hinged and latched to the base. A screw threaded through the cover is used to apply pressure to the carrier in the socket.

Abstract: A driver circuit which operates in a switching mode is provided for an electroluminescent matrix-addressed display. The circuit has a row driver which switches a timed ramp voltage to a selected row of the display. A column driver is used to switch selected columns from a low to a high voltage. The column driver is pulse-modulated (PPM or PWM) so that each pulse is timed to coincide with the ramped voltage to provide a differential voltage peak which provides the desired brightness (or grey scale) at the pixel where the driven row and column cross.

Abstract: A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Abstract: A conducting organic polymer is disclosed consisting of a polypyrrole or an N-substituted analog of pyrrole and a non-nucleophilic polymeric anion. The polymer is formed by electropolymerizing pyrrole from an electrolyte containing a non-nucleophilic polymeric anion and pyrrole.

Abstract: A charge couple device structure includes a thin layer of undoped Al.sub.x Ga.sub.1-x As as a spacer layer between an n.sup.+ doped Al.sub.x Ga.sub.1-x As layer and an undoped GaAs layer or substrate. This multilayer, selectively doped heterostructure supports a two-dimensional electron gas at the interface of the undoped spacer layer and the GaAs layer which permits both increased dynamic range and high speed charge transfer.

Abstract: An optical filter includes a first polarizer for transmitting light having a first polarization direction and a first birefringent element for receiving the light transmitted by the first polarizer. A second birefringent element, of a different material having a different birefringence, receives the light transmitted by the first element, while a second polarizer receives the light transmitted by the second element and transmits the portion having a second polarization direction. The birefringences and the thicknesses of the elements are arranged to effect a predetermined amount of net phase retardation, preferably zero, for light of a wavelength .lambda. in traversing the first and second elements.

Abstract: A thermal detector array includes a substrate layer with a pyroelectric layer attached to the substrate, a plurality of detector regions being defined in the pyroelectric layer by openings through the layer. An array of cavities in the substrate surface separates the detector regions from the surface. First and second electrodes are placed on opposite sides of each detector region or on a single side in a coplanar embodiment. The array is joined to a signal processing device by means of corresponding metallic contacts on the pyroelectric layer and the processing device.

Abstract: A mechanical grinding device is provided for preparing very thin specimens such as transmission electron microscopy specimens. The specimens are held on the end of a long rod which is pressed against a spherical tool by the weight of the rod. The opposite end of the rod extends through a hole in a pivot plate which is spaced above the tool. The tool is mounted on a tool holder which is eccentrically positioned on a rotating base by a pivot. As the base rotates, the tool holder moves and a concave surface is ground in the specimen, thus thinning it.

Abstract: Disclosed is an apparatus for removing electromagnetic energy at a wavelength .lambda. from a beam of electromagnetic energy. Included is an electro-optically tunable Fabry-Perot filter, with an electro-optic crystal having parallel incident and exit surfaces, a first transparent electrode on the incident surface, a second transparent electrode on the exit surface, an incident reflecting layer, and an exit reflecting layer. A detector produces an electrical signal in response to the electromagnetic energy transmitted by the filter. A lock-in amplifier receives the electrical signal and outputs to a control amplifier which also receives as an input a source of alternating current. A high voltage amplifier receives the output of the control amplifier and applies its output across the electro-optic crystal.

Abstract: Disclosed is an optical bandpass filter for transmitting light in a narrow band around the wavelength .lambda..sub.c, including a first series of layers, each of thickness t, having a refractive index n.sub.1 and a second series of layers, each of thickness t, having a refractive index n.sub.2 and alternating with the first series. The thickness t is selected so that t=.lambda..sub.c /4n.sub.c and .vertline..DELTA..vertline.>.pi..vertline.D-1/.lambda..sub.c .vertline., where ##EQU1## and n.sub.c is the common value of n.sub.1 and n.sub.2 at the wavelength .lambda..sub.c. Also disclosed is a filter with each succeeding layer in the first and second series thicker than the preceding layer. The thickness of the thinnest layer is .lambda..sub.1 /4.sub.n and the thickness of the thickest layer is .lambda..sub.2 /4n Cos .theta., where .lambda..sub.1 is the minimum wavelength to be reflected by the filter, .lambda..sub.2 is the maximum wavelength, n=(n.sub.1 +n.sub.2)/2, and .theta.

Abstract: Disclosed is an optical filter for selectively transmitting light in a passband at the wavelength .lambda., including an initial polarizer with a polarization direction perpendicular to a beam path and a final polarizer spaced from the initial polarizer along the path and having the same polarization direction. A birefringent element is positioned between the polarizers with an optic axis perpendicular to the path and rotated with respect to the polarization direction, the element having a birefringence which is zero at the wavelength .lambda.. Lyot-Ohman and Solc embodiments of the filter are also described.

Abstract: A method is provided for obtaining a fine grain structure in 2000 and 7000 series aluminum alloys. The alloy is solution treated and overaged to provide a suitable precipitate. It is then softened and stabilized so that it can be cold rolled at room temperature without cracking. After cold rolling, the alloy is held at a recrystallization temperature so that new grains are nucleated and grow to form a fine grain structure.

Abstract: A friction material for brake linings is formed using a polystilbazole resin (3-16% by weight) to provide the matrix for the material. The balance of the material is filler material such as steel wool, metal powders, carbon, ceramic powders, and friction modifiers. The lining is produced by mixing the ingredients and hot pressing the mixture at temperatures which promote the flow and cure of the resin, and at pressures which produce a material of suitable density.