Patents Represented by Law Firm Cushman Darby & Cushman Group of Pillsbury Madison & Sutro L.L.P.
  • Patent number: 5592004
    Abstract: A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
    Type: Grant
    Filed: September 28, 1995
    Date of Patent: January 7, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Muneo Tamura, Takeshi Yamauchi, Katuhide Niwa, Takeshi Fukazawa, Akira Kuroyanagi, Tooru Yamaoka