Abstract: A photosensing pixel element comprises a bipolar phototransistor used as both an integrating photosensor and a select device. The phototransistor is a vertical structure, having as its collector a first doped region of a first conductivity type disposed in a semiconductor substrate or well structure. The base terminal of the bipolar phototransistor comprises a doped region of a second conductivity type disposed within the first doped region and is utilized as the select node for the pixel. Conventional field oxide regions may be employed to isolate the base regions of adjoining phototransistors. A polysilicon line doped to the first conductivity type is disposed over the surface of the semiconductor substrate and is insulated therefrom except in regions where it is in contact with the doped region of a second conductivity type to form an epitaxial emitter for the phototransistor. The polysilicon line also forms the emitter contact for the phototransistor.

Abstract: A semiconductor or substrate of a first conductivity type includes a well structure of a second conductivity type formed therein. A first low voltage MOS transistor includes spaced apart source and drain regions of the first conductivity type in the well. A first transistor gate lies above a channel region which is disposed between the source and drain regions of the first low voltage MOS transistor and is separated therefrom by a gate dielectric having a first thickness. A second high voltage transistor includes spaced apart source and drain regions of the first conductivity type in the well. A second transistor gate lies above a channel region which is disposed between the source and drain regions of the second high voltage transistor and is separated therefrom by a gate dielectric having a second thickness which is greater than the thickness of the gate dielectric of the first low voltage MOS transistor.

Abstract: A diamond film having an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm greater than about 3, a Raman sp full width half maximum less than about 6 cm and a diamond-to-graphite Raman ratio greater than about 25. The diamond film has a thermal conductivity of at least 17 Wcm K.

Abstract: Apparatus for observing circuit nodes in an analog integrated circuit includes a multiplexer connected to a plurality of circuit nodes to be observed, a sample/hold circuit for holding voltages obtained from the selected nodes, and a controller responsive to external signals for controlling the operation of the multiplexer and the sample/hold circuit.

Abstract: A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.