Abstract: A semiconductor device comprises a body of semiconductor material having a PN junction terminating at a major surface thereof. At least one field limiting ring is within the body and extends around a portion of the PN junction. Each field limiting ring is spaced apart from the surface.

Abstract: An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the devide, so as to increase the threshold voltage window of the device. The region is formed by ion implantation in such a manner that the thin gate insulator layer is also doped resulting in a device having improved stability.

Abstract: A short gate field effect transistor having a gate on the bottom of a recess in a body of semiconductor material with the source and drain being on the surface of the semiconductor body at opposite sides of the recess is made by providing a metal film on the surface of the semiconductor body with the metal film having an opening therein. A recess is formed in the portion of the semiconductor body in the opening in the metal film. While protecting the bottom portion of the recess, metal films are plated up on each side of the recess until the spacing between the metal films across the recess is equal to the desired length of the gate. The gate is then deposited on the bottom of the recess using the plated metal films as a mask to control the length of the gate.

Abstract: A drain extension which is employed with complementary symmetry metal-oxide semiconductor (COS/MOS) devices which are constructed with a closed geometry gate structure. This drain extension of closed geometry gate structures includes lightly doped regions which surround contacts and heavily doped regions in the areas between concentric gates where there are no contacts.

Abstract: A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprises forming on a body a diffraction grating profile, exposing the grating profile to a beam of light while depositing the material on both the substrate and the grating profile, whereby the grating profile functions as a relief pattern diffracting the light beam into diffracted beams of various orders, measuring the intensity of the first order (I.sub.1) and second order (I.sub.2) beams to obtain a ratio signal (I.sub.2 /I.sub.1), and then transmitting the ratio signal to processing means for determining the aspect groove width of the relief pattern, whereby the thickness of the depositing layer is determined from a pre-established relationship dependent upon the aspect groove width.

Abstract: A semi-planar silicon-on-sapphire composite comprises a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa.

Abstract: The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

Abstract: The method comprises forming a blind hole in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask comprising a single layer of silicon nitride. The blind holes are filled with epitaxially grown silicon and field effect transistors are laid out with their gates orthogonal to a line which is at a 45.degree. angle to a standard wafer flat, i.e. orthogonal to the projection of the "c" axis onto the "r" plane of the sapphire wafer.

Abstract: An envacuated envelope has substantially flat, parallel front and back walls and spaced, parallel support walls extending between and perpendicular to the front and back walls and forming a plurality of channels. Beam guides extend along each of the channels for guiding three beams along each channel and for selectively deflecting the beams at selected points along the channel toward a phosphor screen on the front wall. Between the beam guides and the phosphor screen are deflection electrodes for deflecting the beams transversely across the channel so as to scan the portion of the phosphor screen which extends across the channel. Also between the beam guides and the phosphor screen is means forming an electron lens for converging the three beams at a point spaced from but adjacent to the screen.

Abstract: Electrodes in an image display device are biased by a circuit composed of a first switch means for applying a first potential to one of at least two sets of alternate electrodes. The circuit also includes means for isolating each of the electrodes in a given set from the other electrodes in that set. A second switch means applies a second electrical potential to one electrode in the other set. Alternate embodiments of the present invention relate to multiplexing of the switching circuitry to reduce the number of components.

Abstract: An evacuated envelope has spaced, substantially parallel flat front and back walls. Along the front wall is a phosphor screen and along the back wall are electron beam guides for guiding beams of electrons along paths substantially parallel to the front wall. The beam guide includes a pair of spaced, parallel plates between which the beams pass and a plurality of aligned openings in the plates with the openings being arranged in rows extending along the paths of the beams. A gun structure which includes at least one cathode is provided at one end of the beam guide plates. The gun structure is adapted to generate the electrons and direct the electrons as beams between the beam guide plates. The beam guide plates have tabs extending from the one end toward the cathode with the tabs being positioned at the ends of the rows of the openings in the plates. The tabs are adapted to generate electrostatic fields which guide the beams from the cathode between the plates along the rows of the openings.

Abstract: A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of semiconductor material are to be deposited. A second slide movable extends through the boat and across the wells adjacent the open tops of the wells. The second slide supports the starter deposition materials. A wafer extends partially across each well adjacent each slide, and an inclined guide plate extends partially across each well from adjacent the second slide to an edge of the wafer. Molten deposition material is deposited from the second slide onto the inclined guide plate and rolls into an end of the space between the wafer and the substrate carried on the first slide. The deposition material is then sucked into the space between the wafer and substrate by capillary action. Upon cooling the furnace boat, the semiconductor material will deposit from the deposition material onto the substrate.

Abstract: A semiconductor laser capable of fundamental lateral mode operation, includes a region of high conductivity in the form of a stripe in a semiconductor body and at a contacting surface of the body. The high conductivity region is between and contiguous to a pair of spaced regions also in the body and at the contacting surface. The pair of spaced regions are of a lower conductivity than the high conductivity region. The low and high conductivity regions are in electrical contact with a stripe contact and provide a focused current distribution from the stripe contact which is compatible with fundamental lateral mode operation of the laser.

Abstract: A semiconductor mesa device having reduced leakage current comprises a moat substantially completely filled with a passivating material. A layer of conductive material overlies the passivating material and is spaced apart from the adjacent semiconductor material. Such a structure is particularly advantageous for use in low current devices.

Abstract: An evacuated envelope has a rectangular display section and a gun section at one edge of the display section. The display section includes front and back walls which are generally rectangular, in closed spaced, parallel relation, and a plurality of spaced, parallel support walls between the front and back walls forming a plurality of parallel channels. The gun section extends across one end of the channels and includes therein gun structure which will direct electrons into the channels. In each of the channels is a beam guide which confines the electrons in a beam and guides the beam along the length of the channel. The beam guide also includes means for selectively deflecting the electron beam out of the guide at selective points along the guide so that the beam will impinge upon a phosphor screen along the inner surface of the front wall.

Abstract: An electron multiplier includes a plurality of staggered parallel dynodes disposed between two insulating vanes. The dynodes are disposed between a cathode at one end and a high energy electron filter at the other end. The electron filter includes at least two staggered filter bodies which extend into the space between the vanes. Each of the filter bodies extends slightly more than one-half the distance between the vanes so as to provide no straight path therethrough for high energy electrons, i.e., the filter is optically opaque. Between the dynodes closest to the cathode and the electron filter is a transition region. The transition region includes transition dynodes, having unequal widths and unequal spacings, and steering electrodes. In multiplier operation, the transition region functions to steer low energy electrons around the electron filter.

Abstract: A method of passivating a semiconductor device having at least one active component disposed therein comprises exposing the device to atomic hydrogen at a temperature lower than about 450.degree. C.

Abstract: A plurality of Schottky barrier devices are produced by a method which uses a relationship between barrier height, surface concentration of impurities, and alloying time valid when a thin layer of oxide is present on a device substrate and includes the steps of preselecting an impurity concentration for the principal surface of a plurality of silicon substrates and using a predetermined alloying time for each substrate to achieve a preselected barrier height.

Abstract: A machine for changing the spacing of a plurality of wafers comprises a plurality of wafer receiving surfaces initially having a first spacing associated therewith. The wafer receiving surfaces cooperatively engage with means which, when activated, move the plurality of wafer receiving surfaces so that they have a second spacing associated therewith.

Abstract: A semiconductor laser having opposed end surfaces with an optical reflective means on the surface of at least one end surface has fundamental lateral mode selectivity. The laser has an optical waveguide that extends from one end surface to the other. The optical reflective means may be an electrical insulation layer on the end surface with a reflective stripe on the insulation layer and having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the reflective stripe. Alternatively, the selectivity means can be an antireflection layer on the end surface with a stripe opening in the antireflection layer having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the antireflection layer. The opening in the antireflection layer is formed by placing a wire close to the end surface and evaporating the antireflection material onto the end surface.