Abstract: A VCO has a plurality of MIGFETs coupled to provide phase adjustment in response to receiving digital phase adjustment control signals. The VCO includes a ring oscillator implemented as a plurality of serially coupled inverters. A phase adjustment circuit is coupled to the output of each inverter. The phase adjustment circuit of each stage comprises a predetermined number of MIGFETs. In one embodiment, half of the MIGFETs are used to speed-up the phase/frequency of the OUTPUT signal a predetermined amount in response to receiving speed-up control signals. The other half of the MIGFETs are used to slow-down the phase/frequency of the OUTPUT signal a predetermined amount in response to the receiving slow-down control signals. The VCO requires relatively less surface area, is simple, and is easy to implement.

Abstract: A method and apparatus is provided for prefetching in a data processing system (10). The data processing system (10) has a bus master (14) and a memory controller (16) coupled to a bus (12). A memory (18) is coupled to the memory controller (16). In the data processing system (14) an address is driven onto the bus (12). Before the address is qualified, data corresponding to the address is prefetched. Prefetching the data before the address is qualified allows prefetches to be accomplished sooner.

Abstract: A semiconductor device includes a plurality of pillars formed from a conductive material. The pillars are formed by using a plurality of nanocrystals as a hardmask for patterning the conductive material. A thickness of the conductive material determines the height of the pillars. Likewise, a width of the pillar is determined by the diameter of a nanocrystal. In one embodiment, the pillars are formed from polysilicon and function as the charge storage region of a non-volatile memory cell having good charge retention and low voltage operation. In another embodiment, the pillars are formed from a metal and function as a plate electrode for a metal-insulator-metal (MIM) capacitor having an increased capacitance without increasing the surface area of an integrated circuit.

Abstract: A fully differential peak detection circuit includes programmable sensitivity and an autozero function. The peak detector has a fully differential charge-coupled analog signal path. The entire analog signal path is autozeroed upon enable and/or in response to sensing a logic zero at the output, where the logic zero follows a logic one. The peak detector includes a differential gain stage for receiving an analog input signal. The differential gain stage includes offset error compensation. The offset error compensation is selected upon enable and/or in response to an output signal of the peak detection circuit and automatically zeros an offset error voltage in response to a predetermined logic state of the output signal. The output of the gain stage is provided to a comparator stage. A plurality of capacitors coupled to the comparator stage stores a predetermined voltage for setting a sensitivity of the peak detector.

Abstract: A memory (10) has a plurality of memory cells, a transceiver (56) for receiving a low voltage high frequency differential address signal, and a serial input/output data port (52, 54) for receiving a high frequency low voltage differential data signal. The memory (10) can operate in one of two different modes, a normal mode and a cache line mode. In cache line mode, the memory can access an entire cache line from a single address. A fully hidden refresh mode allows for timely refresh operations while operating in cache line mode. Data is scored in the memory array (14) by interleaving in multiple sub-arrays (15, 17). During a hidden refresh mode of operation, one sub-array (15) is accessed while another sub-array (17) is refreshed. Two or more of the memories (10) may be chained together to provide a high speed low power memory system.

Abstract: An integrated circuit (70) includes a first power supply bus (72) and a second power supply bus (74). The first power supply bus (72) provides a first power supply voltage (VDD) to a first plurality of circuit elements (12 and 76). The second power supply bus (74) provides a second power supply voltage (LVDD) to a second plurality of circuit elements (14), where the second power supply voltage is lower than the first power supply voltage. During a normal operating mode of the integrated circuit (70), the first power supply bus (72) provides the first power supply voltage to the first plurality of circuit elements (12 and 76) and the second power supply voltage is not provided to the second plurality of circuit elements (14). During a low power operating mode, the second power supply bus (74) provides the second power supply voltage to the second plurality of circuit elements (14) and the first power supply voltage is not provided to the first plurality of circuit elements (12 and 76).

Abstract: A dual-port memory includes a plurality of memory cells coupled to a row decoder and column logic. Each memory cell includes two storage nodes, where each storage node is coupled to a bit line via an access transistor. Each memory cell also includes a logic gate for logically combining a word line signal with a column address signal and providing the resulting output signal to the gates of the access transistors. In one embodiment, the logic gate is a NOR logic gate and in another embodiment, the logic gate is a transmission gate. This prevents a potential read disturb problem with unselected memory cells of a row. This also reduces power consumption in the memory.

Abstract: A storage element (10) includes a first latch (12) and a second latch (14). The first latch (12) is coupled to a first power supply voltage terminal for receiving a first power supply voltage. The second latch (14) is coupled to a second power supply voltage terminal. The second power supply voltage terminal for receiving a second power supply voltage that is lower than the first power supply voltage. During a normal mode of operation, the second power supply voltage is not provided to the second latch. During a low power mode of operation data is transferred from the first latch to the second latch and the first latch is powered down. The data is retained by the second latch while in low power mode.

Abstract: A data processing system (10) has an embedded non-volatile memory (22) that is programmed and erased by use of a high voltage provided by a charge pump (78). In order to prevent the non-volatile memory (22) from being inadvertently programmed or erased during low power supply voltage conditions, the charge pump (78) is disabled and discharged when the power supply voltage drops below a predetermined value. This is accomplished by enabling a low voltage detect circuit (110) in response to a program or erase operation being initiated. A control register (76) will provide a high voltage enable signal to the charge pump (78) only when a power supply valid signal is received. In another embodiment, the low voltage detect circuit (110) may be enabled by another condition to protect the data processing system (10) from an authorized access.

Abstract: A system (10) translates memory addresses. Processing circuitry (12) provides an effective address to a storage array (14, 16) having a plurality of stored effective addresses, each of the plurality of stored effective addresses having a corresponding pair of a lock bit and a valid bit. An output tag value and a single valid bit are provided to a comparator (18). The lock bit defines one of two predetermined classes of tasks executed by the system. The single valid bit is applicable to both of the two predetermined classes of tasks. The lock bit qualifies the clearing of the single valid bit. The comparator respectively compares the output tag value and the single valid bit with a predetermined effective address and a predetermined bit value. An output hit signal is provided when a match occurs to validate a physical address provided by a physical address array (20).

Abstract: A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.

Abstract: A circuit (50) that receives dynamic signals performs both logic and latching to achieve high speed operation. The circuit has a clock that defines both an evaluation phase and a precharge phase in which the dynamic signals are evaluated during the evaluation phase. The circuit (50) functions by precharging a latch node (INT) during the evaluation phase then performing evaluation as well during the evaluation phase. The evaluation results in providing a valid logic state to the latch node. A latch circuit (54) latches this valid state during the precharge phase and holds it in this valid state during the precharge phase. This can be adapted to select which one of the dynamic signals is to be coupled and latched on the latch node (INT).

Abstract: A SRAM (14) includes a SRAM cell (26), the cell (26) includes a first storage node (N1), a second storage node (N2), and a cross coupled latch (40) including a first primary source current path to the first storage node, a first primary sink current path to the first storage node, a second primary source current path to the second storage node, a second primary sink current path to the second storage node, a fifth primary current path to the first storage node, and a sixth primary current path to the second storage node. During standby and/or a read operation of the SRAM cell (26), one of the fifth primary current path and the sixth primary current path is conductive. During a write operation, the fifth primary current path and the sixth primary current path are non-conductive.

Abstract: An integrated circuit includes a memory (10). The memory (10) includes an array (12) of non-volatile memory cells. Each memory cell (14) of the array (12) includes a plurality of terminals comprising: a control gate, a charge storage region, a source, a drain, a well terminal, and a deep well terminal. Following an erase operation of the array (12), the erase voltages are discharged from each of the memory cells. A discharge rate control circuit (11) controls the discharging of terminals of the memory cell. The discharge rate control circuit (11) includes a reference current generator (34) for providing a reference current. A first current mirror (46) is coupled to the reference current generator (34) and provides a first predetermined discharge current for discharging the control gate, drain, and source. A second current mirror (36) is coupled to the reference current generator (34) and provides a second predetermined discharge current for discharging the well terminals after the erase operation.

Abstract: A semiconductor device includes a memory array having a plurality of non-volatile memory cells. Each non-volatile memory cell of the plurality of non-volatile memory cells has a gate stack. The gate stack includes a control gate and a discrete charge storage layer such as a floating gate. A dummy stack ring is formed around the memory array. An insulating layer is formed over the memory array. The dummy stack ring has a composition and height substantially the same as a composition and height of the gate stack to insure that a CMP of the insulating layer is uniform across the memory array.

Abstract: A power transistor, formed from transistors connected in parallel, each transistor is formed in an active region using a relatively long gate called a gate finger that is typically formed from polysilicon that accumulates resistance over its length. To alleviate this, the gate finger is strapped to a metal line at tabs adjacent to the finger gate over the active area, typically over the source, but the tabs add gate-to-source capacitance. This was previously quite small but as gate dielectrics have gotten thinner there is more capacitive coupling to the substrate by the tabs, and as gates have gotten thinner there is more resistance in the polysilicon finger gates. Both have the effect of increasing the RC time constant of the gate finger. This increase in RC time constant is alleviated by increasing the thickness of the dielectric separating the tabs from the substrate thereby reducing the capacitance caused by the tabs.

Abstract: A flip-flop (10) has a normal mode and a low power mode to save power. The flip-flop (10) has a master latch (14) and a slave latch (20). The slave latch (20) is used to retain the condition of the flip-flop (10) during the low power mode, where power is withdrawn from the master latch (14) but maintained on the slave latch (20). The slave latch (20) may use transistors with lower leakage characteristics than the transistors that make up the master latch (14). These lower leakage characteristics may be achieved by a higher threshold voltage and/or a thicker gate dielectric. Operating speed of the flip-flop (10) is maintained by implementing the slave latch (20) so that no logic gate or switching transistor is in the critical timing path. Instead, the slave latch (20) has an input/output terminal to tap into the signal path between the master latch and an output circuit (22).

Abstract: A clock distribution and control system (10) includes one counter (30) in a clock generation domain and another counter (40) in a phase-delayed clock domain. The phase-delayed domain counter (40) output is combined with a programmable offset value chosen based on the phase delay of the clock distribution system. The result is used to insure that communication between logic in the clock generation clock domain and logic in the phase-delayed clock domain occurs deterministically on the correct clock edge for a range of clock frequencies.

Abstract: A method for forming a semiconductor device (100) includes a semiconductor substrate (102) having a first region (104), forming a gate dielectric (108) over the first region, forming a conductive metal oxide (110) over the gate dielectric, forming an oxidation resistant barrier layer (111) over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO2, MoO2, and RuO2, and the oxidation resistant barrier layer includes TiN.

Abstract: A method (200) and apparatus (100) for allocating entries in a branch target buffer (BTB) (144) in a pipelined data processing system includes: sequentially fetching instructions; determining that one of the instructions is a branch instruction (210, 215, 220); decoding the branch instruction to determine a branch target address; determining if the branch target address can be obtained without causing a stall condition in the pipelined data processing system; and selectively allocating an entry of the BTB (144) based on the determination. In one embodiment, an entry of the BTB (144) is allocated if the branch instruction is not loaded into a predetermined slot (S1) of a prefetch buffer (102) and no other stall condition will occur. The method (200) and apparatus (100) combine the advantages of using a BTB (144) and branch lookahead to reduce stall conditions in the data processing system.