Abstract: A CCD driven integrated optical modulator array including an array of chirp grating optical lenses implemented on the surface of an electro-optical crystal such as LiNbO.sub.3 or LiTaO.sub.3, a plurality of channel waveguides and a thin metal film pattern on the surface of the waveguides for modulating the optical waveform in each channel. The thin metal film form planar capacitors, each of the capacitors being electrically connected to the output circuit of a corresponding semiconductor device, such as a CCD array. The CCD array is implemented on a semiconductor wafer bonded to the electro-optical crystal. Signals in each optical channel in the electro-optical crystal are thereby modulated by corresponding circuit elements associated with corresponding CCD channels implemented on the major surface of the semiconductor wafer.

Abstract: The invention is an apparatus and method for aligning a very fine wire relative to a workpiece. It comprises an alignment fixture supporting a pair of spaced-apart lead screws for receiving the wire in the threads thereof. The wire is affixed to spacer arms oppositely protruding from the fixture and spans the spacing between the screws. The workpiece is supported between the spacer arms and may be raised or lowered to provide alignment with the wire which is then translated or oriented by turning either or both of the lead screws until the relative alignment is achieved. The wire is affixed to each of the arms in a slackened condition and a tiny weight is suspended from the wire for yieldably tensioning the same across the threads, but providing for translation without fracture.

Abstract: A dichroic transducer is disclosed including a light source, a film containing a dichroic material in the path of the light beam and an acoustic information-containing wave, and a detector in the path of the modulated light beam for detecting the intensity thereof. The detector may preferably be a fiber optics pickup device.

Abstract: A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N.sub.2, at a temperature of less than 1000.degree. C. The N.sub.2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.

Abstract: A static read only memory fabricated with field effect transistors of either the depletion type or the enhancement type connected in series. The read only memory includes a compact sensing circuit for detecting relatively small voltage swings at each node corresponding to a bit line of the memory cell, and a highly sensitive differential sense amplifier including first and second cascaded connected inverter stages.

Abstract: Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.

Abstract: The invention is directed to continuous (gapless) propagation structures for use with magnetic bubble domain devices. The gapless structures are arranged so that magnetic bubbles will propagate therealong without a significant change in size or diameter of the bubble. In addition, the structures are configured so that the bubbles will propagate in a preferred direction without ambiguity.

Abstract: There is shown and described a magnetic bubble domain device organization using certain propagation elements which have expanded size relative to the remainder of the propagation elements in order to improve device or system operation.

Abstract: A digital-to-analog optical recorder incorporating both CCD and integrated optics technologies which is fabricated as a single integral unit including an electro-optical layer portion and a semiconductor layer portion. Sampling circuits and digital-to-analog converters are implemented on the semiconductor layer portion using CCD technology, and a plurality of optical channel waveguides and electro-optical modulators are implemented on the electro-optical layer portion. Each digital signal is converted into two complementary light spots at the output of the recorder.

Abstract: A boat for use in wafer processing technology such as associated with semiconductor wafers. The boat consists of a relatively flat bottom plate having a plurality of substantially parallel V-cut notches therein on which the bottom of the wafer rests and two parallel side rails disposed above and on either side of the flat bottom plate for holding the sides of the wafer. The two side rails includes a plurality of opposed U-shaped notches cut in parallel along the inner surface of the side rails for movably securing the opposite side edges of the wafer placed in the boat. Each pair of opposed U-shaped notches being offset with respect to a V-cut notch operatively associated therewith. Such boats are applicable to wafer handling areas including oxidation, diffusion, low pressure chemical vapor deposition (LPCVD), plasma etching, chemical etching, photoresist coating, baking, stripping, ultrasonic cleaning, and other automatic wafer handling operations.

Abstract: A voltage regulator circuit for reducing the noise sensitivity of digital logic circuits by controlling the voltage amplitude range of the clock signal.The circuit includes sensing means connected to the clock input for determining the range of the voltage amplitude of the input clock signal, a regulator circuit connected to the sensing circuit for limiting the voltage swing of the clock signal, and a clock output connected to the regulator circuit for supplying an output clock signal having a predetermined voltage amplitude range.

Abstract: A method of etching a surface of a body including the steps of applying a suitable modified epoxy thermo-setting adhesive coating to an etchant resisting masking film; punching the masking film in a predetermined pattern corresponding to the pattern to be etched on the body; applying the masking film to a major surface of the body to be etched, thereby exposing a portion of the major surface corresponding to the predetermined pattern; setting the adhesive coating by applying heat so that the masking film is securely attached to the body; and subsequently applying an etchant to the body covered by the making film so that the predetermined pattern is etched into the major surface of the body.

Abstract: An improved high gain, field effect transistor differential amplifier including first and second cascade connected inverter stages, a feedback controlled source of current connected to each of the stages, including a source of controlled positive feedback for increasing the voltage gain. A positive feedback path is connected between an output terminal of the differential amplifier and the source of current so that the current in each inverter stage is more precisely controlled.

Abstract: A microelectronic fabrication process for minimizing the threshold voltage variation across the surface of a wafer of semiconductor material. The process precisely specifies the degenerate (or heavily doped) impurity profile distribution by using ion implantation so as to minimize the autodoping of adjacent gate regions immediately after the ion implantation step during gate oxidation, while maximizing the surface concentration of the dopant at the ultimate silicon surface to achieve appropriate surface sheet resistance and junction depth after all circuit fabrication steps have been completed.

Abstract: There is described a unique mask and method of making same. The mask is especially useful in high resolution fabrication techniques such as in making magnetic bubble domain structures, semiconductor device structures and the like. The mask includes a suitable support of appropriate density to be substantially transparent to various types of radiation such as, but not limited to, E-beams, X-rays and the like. A layer of material which is substantially opaque to the same radiation and which can have the solubility thereof changed by application of E-beams or the like is provided on the support material. The mask is exposed to the solubility changing radiation wherein a pattern is defined in the layer, the layer is etched in a non-critical etch so that the soluble portion thereof is removed and the remaining material provides a suitable pattern. To the extent necessary, a suitable auxiliary support member can be provided to the support.

Abstract: There is disclosed an apparatus and method for constructing integrated buffered devices for use with magnetic bubble domain memories. A small storage loop acts as the buffer memory and is interfaced with the main storage loops through a new circuit component. The new circuit component performs the function of transferring a bubble from one track, holds the bubble for a prescribed number of cycles, and then transfers the bubble to another track. Thus, any arbitrarily located bubble within the storage loop can be transferred to any arbitrary location in the buffer loop.

Abstract: A magnetic bubble domain circuit component for selectively, substantially concurrently, exchanging bubble domains from adjacent propagation paths. The exchange switch defined herein is an active (i.e. a control current is required) switch. The improved design of the exchange switch permits bubble domain exchanges in a minimum time and distance in a magnetic bubble domain circuit.

Abstract: There is provided a self-biased structure which permits magnetic bubble domain device operation. The invention consists of three layers of material with a bias layer sandwiched between two bubble layers.

Abstract: Compact and high speed logic circuits that utilize CMOS technology to perform the Boolean operations A.multidot.B and A+B. The presently disclosed logic circuits are comprised of a field effect transistor and first and second logic performing diodes which are uniquely interconnected with one another so as to reduce the number of circuit components and to increase the operating speed relative to conventional logic circuits.

Abstract: An electrochromic display utilizing a metal diphthalocyanine complex as the electrochromic material is disclosed. Displayed information can be switched in less than 100 milliseconds. The display has multicolor and color reversal capabilities.