Abstract: A high-frequency oscillation apparatus wherein an oscillation signal output from a voltage controlled oscillator (VCO) is transferred through a transfer line to a resonator and the resonator is excited. The resonator is coupled with a second transfer line and an RF signal having a level corresponding to the frequency of the oscillation signal is transferred through the second transfer line. When the resonant frequency of the resonator is set to a frequency higher than the oscillation-frequency modulation range of the VCO, the oscillation frequency and the RF-signal level have one-to-one correspondence. A detector detects the RF signal and outputs to a control section. The control section compensates a control voltage signal applied to the VCO according to the detected-signal level, and outputs the control voltage signal to the VCO to compensate the oscillation signal of the VCO.
Abstract: A method and apparatus for measuring registration between two or more integrated circuit layers is disclosed. Images of actual operative circuitry of different layers of a semiconductor wafer, obtained by an optical technique or a scanning electron microscope, are digitized and analyzed for the relative placement of pattern shapes of the corresponding layers. This relative placement is then compared to tolerance values and if out of tolerance misregistration of the two layers is indicated.
Abstract: In one implementation, a plasma etching method comprises forming a GexSey chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the GexSey chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the GexSey comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the GexSey chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the GexSey chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
Type:
Grant
Filed:
September 2, 2004
Date of Patent:
August 22, 2006
Assignee:
Micron Technology, Inc.
Inventors:
Li Li, Terry L. Gilton, Kei-Yu Ko, John T. Moore, Karen Signorini
Abstract: On one surface of a dielectric substrate having a thickness of one quarter of a signal wavelength, a ground electrode, and a strip line, one end thereof being connected to a high-frequency element via a wire, are formed. On the opposite surface thereof, which opposes a waveguide, a ground electrode is formed, a first electrode opening having a predetermined length and width is formed, opposite to a proximity of an open end of the strip line, and a second electrode opening is formed so that a center line of a width thereof is separated outward by one quarter of the signal wavelength from a conductor wall of the waveguide. Furthermore, via holes having a length of one quarter of the signal wavelength, electrically connecting the ground electrodes on either surface, are formed. The waveguide is disposed in proximity to the dielectric substrate so that a center of the first electrode opening coincides with that of the waveguide.
Abstract: A resonator device including a plurality of resonance units formed on a dielectric substrate, each resonance unit having a plurality of conductor lines forming a capacitive area and an inductive area in a ring shape.
Abstract: An optical information recording medium containing a first information substrate including a first substrate having a guide groove thereon, a first recording layer including a dye, overlying the first substrate and a first reflective layer being a semi-transmittance layer, overlying the first recording layer, a second information substrate comprising, a second substrate having a guide groove thereon, a second recording layer comprising a dye, overlying the second substrate, a second reflective layer being a semi-transmittance layer, located overlying the second recording layer and a light transmittance protective layer overlying the second reflective layer and a transparent intermediate layer. Further, the following relationships (1) and (2) are satisfied: (1) 0.3?nd/??0.7, wherein n represents refractive index in the complex refractive index n-ik of the light transmittance protective layer, d represents a thickness thereof, and ? is at least one of a recording wavelength and a playback wavelength, (2) k?0.
Abstract: A coaxial capacitor is inserted in a coaxial cable in a predetermined position. A housing is provided as a ground conductor path in order to establish conduction between two external conductors in portions of the coaxial cable which are separated by the inserted coaxial capacitor. Inside the housing, a resonator formed by a dielectric coaxial resonator or the like, the coaxial capacitor, and a connecting conductor are accommodated.
Abstract: Circuit arrangement for voltage regulation having a voltage divider and a regulating circuit. The voltage divider is arranged between a first potential and a reference-ground potential and has a plurality of diodes connected in series, wherein an output voltage is tapped off at a terminal of one of the diodes. The regulating circuit, to which the output voltage and a reference voltage are applied, regulates the first potential based on a comparison of the output voltage with the reference voltage. The divider ratio of the voltage divider is altered by activating or deactivating one or more of the diodes, and is additionally altered by setting a magnitude of a voltage drop across at least one of the diodes.
Abstract: A process for the treatment of synthesis gas to increase content of hydrogen and/or carbon monoxide in the gas comprising the step of contacting the synthesis gas with a catalyst comprising oxides of manganese and zirconium, which metals are present in a molar ratio Mn/Zr of between 0.05 to 5.00.
Type:
Grant
Filed:
January 14, 2004
Date of Patent:
August 15, 2006
Assignee:
Haldor Topsoe A/S
Inventors:
Niels Christian Schiødt, Poul Erik Højlund Nielsen, Peter Lehrmann
Abstract: A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact openings with reduced striations and CD loss are formed in a photosensitive silicone ladder polymer (PVSQ) layer by patterning the PVSQ film employing a photomask with a predefined pattern, exposing the PVSQ film to i-line, developing the exposed PVSQ film in a mixture of anisole/xylene in a ratio of about 1:2 for about 30 seconds, and subsequently optionally annealing the undeveloped PVSQ film at a temperature of about 300° C. to about 600° C.
Abstract: A method for operating a content addressable memory that includes receiving a first data value for evaluation at a first memory block during a first time interval, receiving a second data value for evaluation at a second memory block during a second time interval and evaluating said both the first and second data values during a third time interval. According to one embodiment of the invention the first and second time intervals are separate so that the first and second data blocks receive unique data out of phase with one another from a single address bus. Evaluation of both data values takes place substantially simultaneously in the respective memory blocks. Also included is a device architecture and a device adapted to control data transfer to two CAM memory blocks in response to alternate phase transitions of a control signal.
Abstract: A method and apparatus are disclosed for determining an appropriate write current for a magnetic recording medium and to write magnetic information on the magnetic recording medium at the appropriate write current thus determined. When a current value suited to writing on a magnetic recording medium is to be found, a coercive force of the magnetic recording medium is found from a voltage at which magnetic information written on the magnetic recording medium is read, and a traveling quantity of the magnetic recording medium, and a current value corresponding to the coercive force, are found.
Abstract: A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is formed by conducting a plurality of deep implants at different energies and doping levels below the isolation region. The deep implants reduce surface leakage and dark current and increase the capacitance of the photodiode by acting as a reflective barrier to electrons generated by light in the doped region of the second conductivity type of the photodiode.
Abstract: Ionization efficiency is improved in Penning ionization capable of selective ionization. A metastable excited species of a rare gas is produced by introducing the rare gas into an ionization space and inducing an electrical discharge, a sample gas is introduced into the ionization space and Penning ionization is produced owing to collision between the sample gas and the metastable excited species of the rare gas. Electrons released from atoms or molecules positively ionized by Penning ionization are captured by applying a positive potential to an electron-capture electrode placed in the ionization space, and the atoms or molecules positively ionized are guided to a mass analyzer.
Abstract: A center bond flip chip device carrier and a method for making and using it are described. The carrier includes a flexible substrate supporting a plurality of conductive traces. A cut out portion is formed in each trace at a position within a gap of a layer of elastomeric material provided over the traces. Each cut out portion is sized and configured to receive a solder ball for electrically connecting the carrier with a semiconductor die.
Abstract: A method of forming a multiple-trench photosensor for use in a CMOS imager having an improved charge capacity. The multi-trench photosensor may be either a photogate or photodiode structure. The multi-trench photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The multi-trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the multi-trench photosensor.
Abstract: Embodiments provide structures and methods for binning pixel signals of a pixel array. Pixel signals for pixels in an element of the array are binned simultaneously. Pixels in an element are located in a plurality of rows and columns. In exemplary embodiments, pixel voltage signals or pixel current signals are binned.
Abstract: Methods and kits for diagnosing tumorigenicity by measuring the concentration of GP88 in blood, plasma, serum, saliva, urine and other biological fluids. The methods and kits detect GP88 in biological fluids at a concentration as low as about 0.1 to 10 nanograms per milliliter and are useful for determining whether a patient has a tumorigenic condition, whether the patient is likely to be responsive to anti-tumorigenic therapies, and whether the treated patient is responding to anti-tumorigenic therapy by measuring the concentration of GP88 in the patient's serum or other biological fluid.
Abstract: Both wafers on which copper wiring was performed and wafers on which non-copper wiring was performed can be inspected by a single unit of electron microscopic inspection apparatus with no possibilities of the wafers being contaminated with copper. All elements within the apparatus that come in contact with wafers, such as hands of a wafer transporter, are duplicated or more and one of the elements that contact wafers is used appropriately for the wafers under inspection which may be either the wafers on which copper wiring was performed or the wafers on which non-copper wiring was performed.
Abstract: A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the second layer, and forming a catalyst material over the nitride layer, can be performed before annealing to form a catalyst body.