Abstract: A low vacuum is applied to selected surface areas of a resin bonded sand mold to draw ambient air into selected portions of the mold. The air entering the mold burns out a significant portion of the resin binder to form a low BTU gas fuel and to recover casting heat for use in a waste heat boiler or other heat abstractions device. Therefore, foundry air pollution is reduced, the burned out portion of the molding sand is recovered for immediate reuse, and a savings in fuel and energy.

Abstract: An apparatus for handling lock gas which enters a charging lockhopper from a fixed bed coal gasifier vessel includes a separator having a fluid inlet, a gas outlet and a drain. After a charging operation, a pump floods the lockhopper with water under pressure to force the lock gas through the fluid inlet to the separator without loss of gas pressure. When rising water is sensed in the separator, the pump is deactivated and drain valves are opened to drain water from the separator and lockhopper back into a storage tank. The lock gas leaves the separator under pressure and may be applied to gas cleanup equipment.

Abstract: A solar tracking point concentrator for a solar energy system comprises a light weight reflector in the shape of a paraboloid dish having a rim angle of approximately 109.degree., whereby the center of gravity of the reflector mass is coincident with the focal point of the paraboloid. The reflector is supported on a light weight pipe pedestal assembly and controllably driven by a light weight control-drive means so as to be angularly adjustable in both elevation and azimuth to track the sun and efficiently continuously reflect the sun's rays to a heat receiver disposed at the focal point of the paraboloid preferably in a fixed position. The reflector is mounted for controlled movement to effect such angular adjustments about horizontal and vertical axes which intersect at the focal point of the reflector paraboloid. The 109.degree. paraboloid rim angle provides a paraboloid reflector that inherently has its center of gravity essentially coincident with its focal point.

Abstract: A semiconductor magnetoresistor device embodies a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by thermal gradient zone melting to maximize the increase in the current path in a magnetic field established in the device.

Abstract: An apparatus for practicing temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Abstract: A reactant fugitive filler material is employed in a material composition which includes alumina-based ceramics of one or more particle sizes. The reactant fugitive material provides sufficient reactant material at an elevated temperature to form a fired ceramic article which has a porous microstructure in which the grain morphology is characteristic of grains which have undergone vapor phase transport action.

Abstract: An apparatus for practising temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Abstract: A method for simultaneously forming an integral porous outer barrier layer having a density gradient therein on selected external surfaces of a fired ceramic article and for increasing the porosity content and crushability characteristics thereof embodies the firing of a ceramic compact comprising a reactant fugitive filler material and a ceramic material in a controlled atmosphere.

Abstract: A setter is configured to minimize distortion of a core supported during firing. The configuration also provides for adequate gas flow both to envelope the core and to provide an aspiration effort to cause the gas to be drawn downwardly through and about the core structure to the interior of the setter to enhance the removal of reaction products therefrom. A retort, preferably made of molybdenum, is provided to enhance the effects of the setter configuration.

Abstract: Silicon is employed as a masking material for the selective plasma chemical etching of a coating material of a polyimide-silicone copolymer disposed on selective surface areas of electronic devices.

Abstract: Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.

Abstract: A glass layer is preferably chemically vapor deposited on a suitable polymer layer of protective coating material to provide an hermetic encapsulation means for a semiconductor element.

Abstract: A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.

Abstract: A method for simultaneously forming an integral barrier layer on selected external surfaces of a fired ceramic article and for increasing the porosity content and crushability characterstics thereof embodies the firing of a ceramic compact comprising a reactant fugitive filler material and a ceramic material in a controlled atmosphere.

Abstract: A method for increasing the porosity and crushability characteristics thereof embodies the firing of a ceramic compact comprising a reactant fugitive filler material and a ceramic material in a controlled atmosphere.

Abstract: Investment casting molds embodying a material comprising Al.sub.2 O.sub.3 flour with an average particle size less than 100 microns and silica binders exhibit superior physical properties at elevated temperatures up to about 1800.degree. C. The superior physical properties, including an excellent resistance to sag at about 1800.degree. C., are attributed to the formation of a metastable mullite phase. When the average particle size of Al.sub.2 O.sub.3 is less than the order of 10 microns, resistance to sag is present up to about 1900.degree. C.

Abstract: A method for simultaneously forming an integral barrier layer on selected external surfaces of a fired alumina-based compound ceramic article and for increasing the porosity and crushability characteristics thereof embodies the sintering of a ceramic compact comprising a reactant fugitive filler material and the alumina-based compound ceramic material in a controlled atmosphere.

Abstract: A fired alumina article having a core of material having from 20 to 65 percent continuous porosity by volume and desired crushability characteristics and an integral outer barrier layer consisting of porous alumina having a density gradient.

Abstract: Carrier droplets are employed in moving melts of metal-rich semiconductor material through a solid body of semiconductor material by thermal gradient zone melting. One element of the droplet is selected for its ability to penetrate and migrate through the semiconductor material at a reasonable rate. One or more second elements are included in the droplet to impart the desired level of resistivity, conductivity type and/or level of lifetime to the recrystallized semiconductor material or to the material of the body.

Abstract: Mixed oxide compounds La.sub.2 O.sub.3.11Al.sub.2 O.sub.3, NdAlO.sub.3 and nonstoichiometric MgAl.sub.2 O.sub.3 are suitable for making cores and molds for casting advanced superalloy materials such as NiTaC-13.