Abstract: An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate. Each body includes four superimposed regions extending thereacross with the regions being of alternating opposite conductivity type to form PN junctions between adjacent regions. The bodies are capable of emitting light in response to an optical input when an electrical bias is applied thereacross. A fifth region extends across each body and forms a Zener diode with one of the outer region of the body. The Zener diode is adapted to limit the voltage drop across the bodies when one of the bodies is biased to emit light so as to permit more than one body to be turned to its light emitting condition at any one time.

Abstract: An optoelectronic device having an optical switch which can be turned on and off optically by a beam of light. The device includes the optical switch having a first optically variable resistance device connected in series with the switch and one side of a source of current, and a second optically variable resist device connected in series with the switch and one side of a source of current, and a second optically variable resistance device connected in series with the switch and the other side of the current source. The switch is capable of emitting light when a voltage above a threshold is applied thereto. By directing a light into the first optically variable resistance device the voltage applied across the switch is increased to a level just below the threshold and is raised to at least the threshold by directing a light into the switch so as to turn on the switch.

Abstract: A semiconductor, injection mode light emitting device includes a body of a semiconductor material having a quantum mode region formed of alternating layers of gallium nitride and either indium nitride or aluminum nitride. A region of N-type gallium nitride is on one side of the quantum well region and is adapted to inject electrons into the quantum mode region. A region of P-type gallium phosphide is on the other side of the quantum well region and is adapted to inject holes into the quantum mode region. A barrier region of insulating gallium nitride is between the P-type region and the quantum well region and serves to block the flow of electrons from the quantum well region into the P-type region. Conductive contacts are provided on the N-type region and the P-type region.

Abstract: A pulse rate monitor comprises first and second units coupled by a cable. The first unit has a microwave ocillator that provides a pulsating DC signal in accordance with the pulse rate to the second unit which amplifies the signal. Since the first unit does not comprise microwave components other than the oscillator, it can be miniturized. The second unit also supplies power to the first unit.

Abstract: A method and apparatus for determining the location and size of structural defects in a body of solid material, particularly regions of thermoplastic deformation in semiconductor wafers. An acoustical focused beam generated by an ultrasonic transducer, having a pulsed frequency of at least 75 MHZ, is transmitted through the body to provide an attenuated signal pattern which manifests structural defects, such as slip planes which can result in wafer warp, as well as cracks, bubbles, foreign particles or segregation zones and internal interfaces.

Abstract: An optical imager includes a sensor and a diffraction lenticular array. The sensor includes a substrate of a semiconductor material having a pair of opposed major surfaces and a plurality of photodetectors arranged in a plurality of columns along one of the major surfaces. The diffraction lenticular array includes a plurality of stripes of a material which will diffract the radiation being sensed. The stripes are arranged in a plurality of repetitive patterns with each pattern being formed of a plurality of spaced, parallel stripes extending longitudinally along a column of the detectors. The pattern of the stripes has a large spacing between the stripes at the center of the pattern and smaller spacing at the edges of the pattern. The stripes may be on a separate substrate of a material which is transparent to the radiation being detected or directly on the major surface of the semiconductor substrate.

Abstract: A source of a beam of ions includes in a housing a cathode filament, an anode spaced from the cathode and housing an ion emission opening therethrough and an intermediate electrode between the cathode and anode and having an opening therethrough in alignment with the opening in the anode. An inlet opening extends through the housing into the space between the anode and the intermediate electrode to admit a flow of the gas to be ionized into the housing. An outlet opening is through the housing adjacent the cathode and a pump is connected to the outlet opening. In the operation of the ion source a flow of pure ionizing gas is provided through the housing and over the cathode. Some of the gas is ionized to generate the desired ions and the rest of the gas is drawn out of the housing to remove impurities generated at the cathode and thereby increase the lifetime of the cathode.

Abstract: A source of a beam of ions includes in a housing a cathode filament, an anode spaced from the cathode and housing an ion emission opening therethrough and an intermediate electrode between the cathode and anode and having an opening therethrough in alignment with the opening in the anode. An inlet opening extends through the housing into the space between the anode and the intermediate electrode to admit a flow of starting gas and the gas to be ionized into the housing. An outlet opening is through the housing adjacent the cathode and a pump is connected to the outlet opening. In the operation of the ion source a flow of the starting gas is provided through the housing and over the cathode to initiate the discharge. Then the gas to be ionized is admitted into the housing. Some of the gas is ionized to generate the desired ions and the rest of the gas is drawn out of the housing to remove impurities generated at the cathode and thereby increase the lifetime of the cathode.

Abstract: A structure for measuring electrical and physical characteristics of a semiconductor region includes a semiconductor region having a first portion of width W.sub.1 and a second portion of width W.sub.2, wherein W.sub.1 is not equal to W.sub.2. First, second, third and fourth contact areas to the semiconductor region are disposed in seriatim such that the second portion of the semiconductor region extends between the third and fourth contact areas. A bonding pad is electrically connected to each of the contact areas for supplying current to predetermined pairs of the contact areas and for measuring the voltage across predetermined pairs of the contact areas.

Abstract: A high resolution periodic pattern is formed in a layer of a photosensitive material by means of a beam of light and a lenticular array formed of a plurality of lenslets. The lenticular array is positioned over the layer and the beam of light is directed through the lenticular array onto the layer. The beam of light is scanned across the lenticular array to pass through the individual lenslets which defines the light into a fine beam and thereby exposes a small area of the layer. The beam is shaped to achieve a periodic pattern in the layer as the beam scans across the layer. By moving the layer in synchronism with the scanning, a two dimensional array of the pattern can be obtained.

Abstract: A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region of the opposite conductivity type. Conductive gates extend across the channel regions and are positioned therealong. The supplemental channel region is of a volume smaller than that of the major channel region and is completely within the major channel region. Also, the supplemental channel region is of a higher conductivity than the major channel region. The supplemental channel region serves to confine small electrical charges so that the small charges can be transferred along the charge-coupled device with good efficiency, particularly when the device is being operated at low temperatures, such as when it is part of an infrared image sensor.

Abstract: In accordance with the present invention a method for forming an insulating layer over a substrate surface comprises providing first and second raised portions extending from the substrate surface, the first and second portions extending distances X.sub.1 and X.sub.2 respectively, and X.sub.2 being greater than X.sub.1. An insulating layer of thickness T.sub.3 is deposited over the surface so as to conform to the topography of the substrate surface and raised portions and a flowable layer is then deposited over the insulating layer. The flowable layer is next flowed so as to yield a substantially planar surface and then thinned until that portion of the insulating layer that overlies the second portion is exposed. The flowable layer and the exposed surface of the insulating layer are then simultaneously thinned so as to remove a greater thickness of flowable layer than insulating layer. The thinning is stopped when that portion of the insulating layer that overlies the first portion is exposed.

Abstract: A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region.

Abstract: A method is disclosed for recording information wherein an information-containing surface relief image is mechanically micromachined into a recording medium formed of a copper/oxygen amalgam containing 8 to 11 atomic weight percentage of oxygen and having a grain size of 500 Angstroms or less and wherein the amalgam has a hardness of 250 to 320 on the Knoop hardness scale.

Abstract: A MOS/SOI field-effect transistor is made by applying a layer of a photoresist over the surface of a single-crystalline silicon layer which is on a substrate of an insulating material, such as sapphire. The surface of the silicon layer is along a (100) crystallographic plane. The photoresist layer is defined to provide an area of the photoresist layer over the area of the silicon layer where the transistor is to be formed with the edges of the photoresist area being along the edges of (100) crystallographic planes which are perpendicular to the surface of the silicon layer. The portion of the silicon layer around the photoresist layer is etched with an anisotropic plasma etch which etches the silicon layer along the (100) crystallographic planes which are perpendicular to the surface of the silicon layer to form an island of the silicon.

Abstract: A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Abstract: A method for making a MOS field effect transistor structure having tungsten silicide contact surfaces for the gate and source and drain regions is disclosed. Protective oxide is very precisely positioned so that a tungsten layer is formed on only selected silicon surfaces by selective deposition. Next, a layer of polysilicon is formed on said tungsten layer. The resulting structure is treated in an oxygen atmosphere to form the desired tungsten silicide. A silicon nitride cap can also be used to cover the gate portion during source and drain formation.

Abstract: Heavily doped substrates of silicon wafers are inhibited from contaminating by autodoping phenomenon lightly doped epitaxial growing films by providing a thick film of silicon on the susceptor for CVD processing in an RF powered reactor. The susceptor film of silicon serves to provide a silicon seal to the rear surface of the substrate to prevent or at least inhibit outdiffusion of dopants that can contaminate the epitaxial film. For example, substrates heavily doped with arsenic, phosphorus or boron at concentrations of 10.sup.19 atoms/cc are inhibited from autodoping contaminating epitaxial films of silicon lightly doped with the same dopant at 10.sup.14 atoms/cc.

Abstract: There is disclosed herein a method of making a device made up of at least two separate parts each of which is formed of a patterned array with the parts being mounted one on the other, with the patterned arrays of the parts being aligned, such as a CCD imager having a color filter thereon. The two parts are made on separate substrates with a first alignment key being formed on each substrate. The first alignment keys are formed by photolithography using the same mask to form the first alignment keys on each substrate. The various features of each of the parts are then formed on each substrate with each feature being formed by a photolithographic step using a mask which is aligned to a first alignment key so as to align all the features. A second alignment key is formed on each substrate and is positioned on each substrate in the same relationship with a first alignment key.

Abstract: Variations in topography and material properties of the surface layer of a body are observed in microscopic imaging using a scanning capacitance probe. The acronym SCaM identifying the process and apparatus is derived from the phrase scanning capacitance microscope. The material properties observable by SCaM are the surface-electric property representative of the complex dielectric constant of the surface material and the surface-mechanical property representative of the elastic constant of the surface material.