Abstract: A method for forming a CMOS FET structure includes the steps of forming an apertured insulating layer on a silicon substrate and epitaxially forming a monocrystalline silicon island of first conductivity type through an aperture therein. The exposed surface of the silicon island is then thermally oxidized and the portion of the insulating layer not covered by the oxide is removed. A monocrystalline silicon island of second conductivity type is then formed adjacent to the oxidized silicon island of first conductivity type.

Abstract: A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.

Abstract: An apparatus for holding an IC device for tinning the leads in a wave soldering machine is disclosed. The apparatus utilizes a pair of beveled surfaces, one on each side of the lead to be tinned, to limit the extent of penetration of the lead into the molten solder. The beveled surfaces are made of a material which cannot be wet by the molten solder, therefore, surface tension of the solder will tend to limit penetration of the molten solder into the area defined by the beveled surfaces.

Abstract: An improved thick film resistor is disclosed which is comprised of a substrate, a resistor body comprised of a plurality of overlying layers of a resistor material, and a pair of spaced apart terminals each of which has a primary contact portion and a plurality of spaced apart secondary contact portions. The secondary contact portions are interleaved between the layers of resistor material and extend partially into the resistor body and are in electrical and heat transferring contact with the respective primary contact portions of each terminal. The novel thick film resistor is compact in its dimensions and is capable of dissipating substantially large amounts of heat and providing lower current densities than conventional thick film resistors.

Abstract: An apparatus for rapidly and accurately positioning and holding a very small elongated body, such as a stylus holder during manufacturing is disclosed. A pair of magnets or magnetized regions are utilized to position the stylus holder both rotationally and axially. A pusher mechanism, in conjunction with a pair of locating blocks very precisely aligns the stylus holder, causing it to engage the seat of an anvil for support during the manufacturing operation. A retaining mechanism retains the stylus holder within the apparatus until completion.

Abstract: Defocusing effects by undesired wafer tilt caused by photoresist debris in prior art photolithographic apparatus are substantially eliminated by a novel plate for supporting a wafer to be imaged without generating debris. Three tabs are provided along the periphery of an aperture in the plate. Each tab is provided with a spherical body, such as a ball, precisely positioned in a predetermined plane, and arranged to contact the wafer at a tangent to the surface of the spherical body. Relative movement while loading the wafer in the apparatus with respect to the supporting balls causes substantially no discernible debris from the wafer surface material. Imaging defects on the wafer due to photoresist debris are also substantially eliminated by the apparatus.

Abstract: The present invention relates to methods of forming a charge-coupled device (CCD) image sensor which includes in a substrate of semiconductor material a plurality of parallel channel regions, a channel stop region between alternate pairs of adjacent channel regions, a blooming drain region in the channel stop region between the other alternate pairs of adjacent channel regions and a blooming drain barrier region around each blooming drain. The positions of the channel stop regions, the blooming drain regions and the blooming drain barrier regions are defined by a masking layer having openings therethrough and the channel stop regions, blooming drain regions and blooming drain barrier regions are formed by embedding ions of an appropriate conductivity modifier into the substrate through the openings in the masking layer.

Abstract: A semiconductor device structure incorporates a semiconductor wafer having first and second opposing major surfaces and an edge. A first region of first conductivity type is contiguous with the second surface and includes an edge portion which is contiguous with the wafer edge at the first surface. A second region, of second conductivity type, extends into the wafer from the first surface so as to form a PN junction with the first region at a predetermined depth from the first surface. A third region, of second conductivity type, extends into the wafer from the first surface to a depth greater than the predetermined depth. The third region is disposed between and is contiguous with the second region and the edge portion of the first region. When the wafer is silicon the third region has an areal charge concentration of approximately 1 to 2.times.10.sup.12 cm.sup.-2.

Abstract: An apparatus for lapping a facet at the tip of a stylus by softly setting the tip down adjacent a rotating scaife comprises a moveable carriage supported on a platform. The carriage is moved vertically along a second axis substantially orthogonal to the first axis. A stylus holder operates to pivot the stylus toward the scaife and is biased by a spring or weight to assure a soft set down of the stylus tip on the scaife. A displacement sensor senses the angular displacement of the holder and generates a displacement signal proportional to the angular displacement relative to a predetermined reference position.

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.

Abstract: A method is provided for determining the magnitude of flatness deviation in high density information discs, such as video discs, manifesting irregularities in playback. Such flatness deviations are known as "orange-peel." A stylus riding over a relatively large area (4-5 grooves) of the disc surface provides a vertical velocity signal within a given spatial or temporal frequency band. The signal in velocity or displacement form is the quantitative measure of deviation. The method is useful for other type discs where quantitative measurements in flatness deviation are desired.

Abstract: A method and apparatus for determining the true edge length of a body subtended by two other body edges comprises exposing the body to a beam of light such that the edge is imaged by an optical system for projecting a linear section across the body as a silhouette-like image onto a linear array of photosensitive detectors. The image is usually blurred due to diffraction effects. The body is initially positioned in focus and then scanned moving the array provide an image of at least a portion of the desired edge to define a reference line representing the location of the edge. The array is then moved in scanned sequence from that reference line to provide fifty percent (50%) intensity level data points to define the other body edges. Lines are fitted through such data points and extended to intersect the reference line to determine the true length of the edge even with a blurred image of portions of that edge.

Abstract: A method for determining the contour of a spin-coated thin film of material, such as a photoresist solution, on an uneven topography, such as a patterned semiconductor wafer, utilizes a pattern of features as isolated, raised lines of different widths. The pattern serves to provide frequency weighted parameters used to estimate the coating conformality on both simple and complex topographies. One parameter indicating the contour is independent of coating thickness and the other parameter suggests the range of feature-to-feature interaction inherent in complex topographies. The pattern is useful as a "knock-out" portion of a product wafer to monitor the contour of the coating deposited by spun-coated process steps.Orienting the line pattern in radial and tangential position reveals coating thickness relationships dependent on feature orientation with respect to the centrifugal center of the substrate.

Abstract: An apparatus for use in coating a selected area of a surface of a body, such as a flat disc type body, includes a support member having a recess in one side which is adapted to receive the body and an opening through the bottom of the recess which is smaller than the recess. A cup-shaped cover plate is adapted to fit into the recess in the support member. The cover plate has a bottom which is adapted to engage the body and hold it firmly against the bottom of the recess with the surface of the body to be coated being exposed through the opening in the support member. A mask of a magnetic material is adapted to fit in the opening in the support member against the surface of the body. A permanent magnet is adapted to be seated against the bottom of the cover member and attract the mask to hold the mask against the surface of the body.

Abstract: A back-to-back diode includes a substrate having five superimposed layers of hydrogenated amorphous silicon thereon. The first and fifth layers are of one conductivity type, the second and fourth layers are intrinsic, and the third layer is of the opposite conductivity type. The layers are all of the substantially the same thickness. A conductive layer contact is provided between the substrate and the first layer and a conductive layer contact is provided on the fifth layer. The intrinsic layers may include carbon alloyed with the hydrogenated amorphous silicon.

Abstract: A semiconductor device and method for making same having dielectrically isolated individual elements such as transistors, diodes, et al. Some of the isolated elements having fuses formed integral thereto.

Abstract: Apparatus for detecting defects and dust on patterned surfaces, such as patterned wafers, or grooved video disks, utilizes a scanning laser that provides light scattered by defects and dust. The scattered light is detected substantially free of diffracted beams from the pattern by a mask having apertures arranged to pass to the detector only scattered light and to block diffracted light and specular reflections.

Abstract: A method for revealing the presence of heavy metal impurities that may have been introduced during the formation of a layer, such as the deposition of an epitaxial layer on a semiconductor substrate, uses the constant-magnitude steady-state surface photovoltage (SPV) method for determining the minority-carrier diffusion length by essentially two determination steps. A large ratio of the respective diffusion lengths determined before (actually measured or based on a priori knowledge of similar material) and after the epitaxial deposition step is indicative of the presence of a heavy metal impurity in the epitaxial layer. The method is based on the fact that the contaminating metal distributes itself substantially uniformly not only through the epitaxial layer but also throughout the substrate.

Abstract: An apparatus for consistently and automatically positioning the point of a stylus within the field of view and at the focal point of a high power microscope while the stylus remains in the stylus cartridge. All positioning is effected through physical contact between the stylus and the apparatus without contact of the fragile stylus point occurring.

Abstract: A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.