Abstract: A multi-layer electrically conductive shunt is located on the exterior surface of a slider in electrical contact and extending between first and second lead ends of leads that are connected to a sensor of a read head. Electrically conductive spaced apart first and second read pads are located on the conductive shunt in electrical contact with the first and second lead ends via the conductive shunt. The conductive shunt includes a thick gold layer which is located between and interfaces an adhesion layer and a cap layer wherein the adhesion layer makes direct electrical contact with the aforementioned first and second lead ends.

Abstract: A dual antiparallel (AP) spin valve sensor has first, second, third and fourth AP pinned layers which are pinned by sense current fields from a sense current. First and second pinning layers are omitted so that the sensor stack has a reduced height for increasing the linear read bit density of a magnetic read head. Ferromagnetic coupling fields caused by second and third AP pinned layers next to a free layer structure are counterbalanced by a net demagnetizing field from the first and second AP pinned layer structures.

Abstract: A triple antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures in a dual spin valve sensor. The triple AP coupled free layer structure includes first, second and third antiparallel (AP) coupled ferromagnetic free layers and nonmagnetic first and second antiparallel (AP) coupling layers. The first AP coupling layer is located between and interfaces the first and second AP coupled free layers and the second AP coupling layer is located between and interfaces the second and third AP coupled free layers. Magnetic moments of the first and third AP coupled free layers are parallel with respect to one another and, because of a strong antiparallel coupling, the second AP coupled free layer pins magnetic moments of the first and third AP coupled free layers antiparallel thereto.

Abstract: A multi-track magnetoresistive (MR) tape head with precisely-aligned read/write (R/W) track-pairs and a method for fabrication on a monolithic substrate wherein a plurality of tape heads are fabricated from a single substrate wafer by using complete thin-film processing on both sides of the wafer. The recording elements are aligned with readers opposite writers on the other side, providing a method for fabricating a multi-track thin-film magnetoresistive tape head with precisely-aligned R/W track-pairs fabricated on a monolithic substrate. As used herein, the term monolithic denominates an undivided seamless piece. The wafer is built using modified standard thin-film processes for fabricating direct access storage device (DASD) heads and modified substrate lapping procedures. The gap-to-gap separation within each R/W track-pair is reduced to nearly the thickness of the substrate wafer, which is significantly less than conventional separations known in the art.

Abstract: First and second hard bias layers abut first and second side surfaces of a spin valve sensor and first and second lead layers are connected to the sensor for conducting a sense current transversely therethrough. The spin valve sensor has a transverse length between the first and second side surfaces which is divided into a track width region between first and second passive regions wherein the track width region is defined by a space between the first and second lead layers. A free layer in the sensor has first and second passive portions in the first and second passive regions and the first and second passive portions have first and second surfaces respectively. First and second antiferromagnetic (AFM) layers are exchange coupled to the first and second surfaces of the free layer for longitudinally biasing the first and second passive portions of the free layer.

Abstract: The present invention employs a bottom antiferromagnetic (AFM) layer which can be employed for longitudinally biasing a free layer of a spin valve sensor and in addition pinning the magnetic moment of a pinned layer of the spin valve sensor perpendicular to the ABS. The bottom AFM layer has first and second portions in first and second regions of the read head and a third portion in a sensor region thereof. The magnetic spins of the first and second portions of the bottom AFM layer are directed parallel to and along an air bearing surface of the head while the magnetic spins of the third portion are directed perpendicular to the ABS.

Abstract: A dual tunnel junction sensor operates without the requirement of first and second shield layers. This is accomplished by making first and second free layer structures antiparallel (AP) coupled structures. The first free layer structure has first and second AP coupled layers and the second free layer structure has third and fourth AP coupled layers. The thicknesses of the first and third AP coupled layers, which are preferably equal, are different from the thicknesses of the second and fourth AP coupled layers, which are also preferably equal. Field signals from perpendicular or longitudinally recorded magnetic disks rotate the magnetic moments of the first and second free layer structures so that resistances on each side of a pinning layer are additive. Extraneous field signals, other than signal fields from the rotating magnetic disk, are cancelled by common mode rejection.

Abstract: A bottom spin valve sensor employs a seed layer for a nickel oxide (NiO) antiferromagnetic pinning layer for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve or an antiparallel (AP) spin valve sensor. In the preferred embodiment the seed layer is tantalum oxide TayOx or copper (Cu).

Abstract: A magnetic write head has first and second pole piece layers wherein each pole piece layer is a lamination of alternate ferromagnetic and nonmagnetic metal films. Each nonmagnetic metal film causes an antiferromagnetic coupling between ferromagnetic films adjacent thereto so that the adjacent ferromagnetic films are antiparallel exchange coupled for at least partial flux closure therebetween. This reduces the domain walls within the pole piece layers so that the pole piece layers have a higher frequency response to energization by a write coil.

Abstract: A read head, which can be submicron, has an antiparallel (AP) coupled flux guide which is located at an air bearing surface and guides field signals from a rotating magnetic disk to a tunnel junction sensor which is recessed in the head. Because of the highly stable characteristics of the AP flux guide, first and second hard bias layers at the side edges of the flux guide are not required in order to stabilize the magnetization of the flux guide. The AP flux guide has first and second AP layers with oppositely oriented magnetizations so that the flux guide has a net magnetization which is the difference between the magnetizations of the first and second AP layers. These thicknesses are designed to provide a desired uniaxial anisotropy HK and magnetic softness of the AP flux guide.

Abstract: A dual spin valve sensor is provided with a triple AP pinned layer structure on one side of a free layer and a single pinned layer on an opposite side of the free layer for increasing the flexibility in properly biasing the magnetic moment of the free layer. In one embodiment a negative ferromagnetic coupling field may be provided for still further increasing the flexibility of biasing the free layer. In another embodiment the triple AP pinned layer structure may be provided with no demagnetizing field and in still a further embodiment the triple AP pinned layer structure may be provided with a demagnetizing field as desired for still further increasing the flexibility in biasing the free layer.

Abstract: At least a portion of a free layer structure in a spin valve sensor is composed of nickel iron molybdenum (NiFeMo) so that the free layer structure does not have to be reduced in thickness in order to have a reduced magnetic moment for responding to lower signal fields from smaller bits on a rotating magnetic disk.

Abstract: A specular reflecting layer is employed only one side of an AP pinned layer since a ruthenium (Ru) spacer layer in the AP pinned layer blocks conduction electrons. On the same side of the AP pinned layer a second pinned layer may be employed. With this arrangement the specular reflection layer reflects conduction electrons for enhancing a giant magnetoresistive (GMR) effect.

Abstract: A method of making a magnetic head, which has an air bearing surface (ABS), includes forming first and second pole piece layers with the second pole piece layer having a front located second pole tip component and a rear located second pole yoke component, forming the second pole tip component with front and rear surfaces, first and second side surfaces and top and bottom surfaces with the front surface being located at the ABS and the first and second side surfaces and the top and bottom surfaces intersecting the ABS and forming the second pole yoke component with a front portion which has a bottom surface, a back surface and first and second side surfaces that interface the top surface, the rear surface and the first and second side surfaces respectively of the second pole tip component.

Abstract: A method of making a read head includes forming a spin valve sensor with an antiparallel pinned layer that has an AP coupling film located between and interfacing first and second ferromagnetic films wherein the first and second ferromagnetic films are composed of Co90Fe10. Another aspect forms the spin valve sensor with a free layer which has a nickel iron (NiFe) film located between and interfacing third and fourth ferromagnetic films composed of Co90Fe10. Still another aspect forms the spin valve sensor with a sense current field (SCF) pinned layer that is spaced from the free layer and is pinned by sense current fields from other conductive layers of the spin valve sensor.

Abstract: An apparatus and method is disclosed for an enhanced double tunnel junction sensor which utilizes an enhancement layer(s) to enhance magnetoresistance (MR coefficient) and resonant tunneling. Additionally, a combined read/write head and disk drive system is disclosed utilizing the enhanced double tunnel junction sensor of the present invention. The enhancement layers improve the resonant tunneling and boost the MR coefficient to achieve a higher tunnel magnetoresistance (TMR) for the structure with applied dc bias. This is accomplished by using enhancement layers that create a quantum well between the enhancement layer and the pinned layer, which causes resonance, enhancing the tunneling electrons. By doing this, the tunneling constraints on the free layer are decoupled, allowing the free layer to be made thicker which results in reducing or eliminating free layer magnetic saturation caused by an external magnetic source.

Abstract: A magnetic read head includes a tunnel junction sensor that has front and back surfaces that are recessed from the ABS and a flux guide that includes a ferromagnetic flux guide body with front and back surfaces wherein the front surface forms a portion of the ABS and the back surface is magnetically coupled to the tunnel junction sensor. A flux guide body has a middle portion between first and second side portions and first and second antiferromagnetic layers wherein the first antiferromagnetic layer is magnetically coupled to the first side portion and the second antiferromagnetic layer is magnetically coupled to the second side portion for pinning magnetic moments of the first and second side portions so that only a magnetic moment of the middle portion defines a track width of the sensor and responds to field signals from a rotating magnetic disk. The first and second antiferromagnetic layers have side walls which are perpendicular to the ABS and spaced apart by the track width.

Abstract: A spin valve sensor of a read head has a platinum manganese (PtMn) pinning layer that pins a magnetic moment of an antiparallel (AP) pinned layer structure. The pinned layer structure has a first AP pinned layer exchange coupled to the pinning layer so that the magnetic moment of the first AP pinned layer is pinned in a first direction and has a second AP pinned layer that has a magnetic moment pinned in a second direction antiparallel to the first direction. A free layer structure of the spin valve sensor is located asymmetrically between first and second shield layers so that when a sense current is conducted through the sensor a net image current field is executed on the free layer structure by the shield layers.

Abstract: A dual antiparallel (AP) pinned spin valve sensor has a free layer which is biased by opposite ferromagnetic coupling fields and opposite demagnetizing fields from first and second AP pinned layer structures. The opposite magnetic coupling fields are obtained by appropriately sizing first and second spacer layers of the sensor and the opposite demagnetizing fields are obtained by appropriately sizing first and second AP pinned layers of a first AP pinned layer structure and appropriately sizing third and fourth AP pinned layers of a second AP pinned layer structure.

Abstract: A method makes a magnetic head having a top and a bottom, front and rear ends and an air bearing surface (ABS) at the front end, comprising the steps of forming first and second pole piece layers with the first and second pole piece layers separated by a write gap layer at the ABS and connected at a back gap that is recessed rearwardly in the head from the ABS; forming a zero throat height (ZTH) defining layer of baked photoresist that is sandwiched between the first and second pole piece layers with the ZTH defining layer having a rounded front edge where the first and second pole piece layers first separate from one another after the ABS to define the ZTH; and forming an insulation stack with a coil layer embedded therein between the first and second pole piece layers with the insulation stack placed so that the ZTH defining layer is located entirely between the ABS and the coil layer.