Patents Represented by Attorney Gates & Cooper LLP

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  • Building block for a secure CMOS logic cell library
    Patent number: 8111089
    Abstract: A logical building block and method of using the building block to design a logic cell library for CMOS (Complementary Metal Oxide Silicon) ASICs (Application Specific Integrated Circuits) is disclosed. Different logic gates, built with the same building block as described in this invention, will have the same schematics of transistor connection and also the same physical layout so that they appear to be physically identical under optical or electron microscopy. An ASIC designed from a library of such logic cells is strongly resistant to a reverse engineering attempt.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: February 7, 2012
    Assignees: Syphermedia International, Inc., Promtek Programmable Memory Technology, Inc.
    Inventors: Ronald P. Cocchi, James P. Baukus, Bryan J. Wang, Lap Wai Chow, Paul Ouyang
  • Streaming computer system and method with multi-version protocol compatibility
    Patent number: 8112540
    Abstract: A forward and backward compatible streaming protocol requires subsequent versions of the protocol to be purely additive relative to earlier versions. When a data segment is transmitted as a data stream, a first stream of data that is in accordance with a first version of the protocol is transmitted, with additional streams of data that are in accordance with subsequent versions of the protocol appended in sequence to the first stream of data. When a read module implements an earlier version of the protocol than a write module, the data segment is truncated to include only the data supported by the version implemented by the read module. On the other hand, when the read module implements a later version of the protocol than the write module, receipt of the data segment is terminated after the data supported by the version implemented by the write module is received.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: February 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: Mark E. Davis, Andrew G. Heninger, Marc Jablonski, Glenn A. Marcy, Michael C. Werts
  • Miscut semipolar optoelectronic device
    Patent number: 8110482
    Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: February 7, 2012
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato, Benjamin A. Haskell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • III-V photonic integration on silicon
    Patent number: 8110823
    Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: February 7, 2012
    Assignee: The Regents of the University of California
    Inventor: John E. Bowers
  • Hybrid silicon evanescent photodetectors
    Patent number: 8106379
    Abstract: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: January 31, 2012
    Assignee: The Regents of the University of California
    Inventor: John E. Bowers
  • Using geometry bounds to enable scale printing of virtual paper onto physical paper when using a printer with a differing printable area
    Patent number: 8107093
    Abstract: A computer-implemented graphics program that correctly adapts images being printed to the physical capabilities of a printer. A published virtual paper is scaled to a physical paper, taking into account the virtual paper's size, geometry bounds for an image from the virtual paper being printed, balanced geometry bounds calculated from the geometry bounds, the physical paper's size and a printable area of the physical paper, so that the image being printed fits within a printable area of the physical paper.
    Type: Grant
    Filed: May 9, 2005
    Date of Patent: January 31, 2012
    Assignee: Autodesk, Inc.
    Inventors: Benjamin D. Cochran, Brian P. Mathews
  • Method and apparatus for searching media program databases
    Patent number: 8108393
    Abstract: A method, apparatus, article of manufacture for providing list of a plurality of media programs responsive to a user search query is disclosed. In one embodiment, the method comprises the steps of accepting an general search query from a user computer, identifying a synonym for the general search query, identifying a category for the general search query according to the identified synonym, performing a categorical search of a media program database using the identified synonym and the identified category to obtain a search result, and transmitting the search result to the user computer for presentation on a display communicatively coupled to the user computer.
    Type: Grant
    Filed: January 9, 2009
    Date of Patent: January 31, 2012
    Assignee: Hulu LLC
    Inventors: Ting-hao Yang, Zhibing Wang, Yizhe Tang, Qian Chang
  • In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
    Patent number: 8105919
    Abstract: A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: January 31, 2012
    Assignee: The Regents of the University of California
    Inventors: Arpan Chakraborty, Kwang-Choong Kim, Steven P. DenBaars, James S. Speck, Umesh K. Mishra
  • Positron emission tomography probes for imaging immune activation and selected cancers
    Patent number: 8101740
    Abstract: Compounds for use as PET probes and methods for synthesizing and using these, comprising [18F]D-FAC and other cytosine and adenosine analogs.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: January 24, 2012
    Assignee: The Regents of the University of California
    Inventors: Caius G. Radu, Owen N. Witte, Evan David Nair-Gill, Nagichettiar Satyamurthy, Chengyi J. Shu, Johannes Czernin
  • Apparatuses and media for drug elution and methods for making and using them
    Patent number: 8097224
    Abstract: Embodiments of the invention provide to apparatuses and media used in drug elution studies and methods for making and using them. Such methods and materials can be used for example to assess and control the manufacturing process variability of drug eluting implantable devices such as cardiac leads. One embodiment of the invention is a drug elution method that can be used for in-vitro studies of a matrix impregnated with a compound such as a drug blended polymer matrix. A related embodiment of the invention is an apparatus that is used for example to facilitate the practice of the above-noted methods by inhibiting the evaporation of dissolution media from the vessels in which elution is observed.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: January 17, 2012
    Assignee: Medtronic MiniMed, Inc.
    Inventors: Sarnath Chattaraj, Elango S. Minnoor, Eugene Levin, Poonam S. Gulati, John Pennala
  • Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
    Patent number: 8097481
    Abstract: A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: January 17, 2012
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Bilge M. Imer, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
    Patent number: 8084763
    Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: December 27, 2011
    Assignee: The Regents of the University of California
    Inventors: Roy B. Chung, Zhen Chen, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Method for increasing the area of non-polar and semi-polar nitride substrates
    Patent number: 8080469
    Abstract: A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: December 20, 2011
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Dynamic control and regulation of critical database resources using a virtual memory table interface
    Patent number: 8082273
    Abstract: A computer-implemented apparatus, method, and article of manufacture provide the ability to manage a plurality of database systems. A domain contains the database systems, and a database in one of the systems has segmented global memory partitions. A virtual monitor partition provides logon access to the segmented global memory partitions in a form of a virtual database. Open application programming interfaces (API) enable logon access to the virtual monitor partition to access data in the virtual database. A multi-system regulator manages the domain and utilizes the open APIs to access data in the virtual data base.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: December 20, 2011
    Assignee: Teradata US, Inc.
    Inventors: Douglas Brown, Todd Walter, Anita Richards, Debra Galeazzi
  • Closed-loop system management method and process capable of managing workloads in a multi-system database environment
    Patent number: 8082234
    Abstract: A computer-implemented apparatus, method, and article of manufacture provide the ability to manage a plurality of database systems. A domain contains a plurality of database systems. A system event monitor, on each of the database systems, monitors the database systems' system conditions and operating environment events within the domain. A multi-system regulator manages the domain, communicates with the system event monitor, and creates a dynamic event on one of the database systems based on the system conditions and operating environment events. The dynamic event causes an adjustment to a state of the database system.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: December 20, 2011
    Assignee: Teradata US, Inc.
    Inventors: Douglas Brown, Debra Galeazzi
  • UCP4
    Patent number: 8067229
    Abstract: The present invention is directed to novel polypeptides having homology to certain human uncoupling proteins (“UCPs”) and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention, and methods for producing the polypeptides of the present invention.
    Type: Grant
    Filed: November 3, 2005
    Date of Patent: November 29, 2011
    Assignee: Genentech, Inc.
    Inventors: Sean Adams, James Pan, Alan Zhong
  • Atomic ion clock with two ion traps, and method to transfer ions
    Patent number: 8058936
    Abstract: An atomic ion clock with a first ion trap and a second ion trap, where the second ion trap is of higher order than the first ion trap. In one embodiment, ions may be shuttled back and forth from one ion trap to the other by application of voltage ramps to the electrodes in the ion traps, where microwave interrogation takes place when the ions are in the second ion trap, and fluorescence is induced and measured when the ions are in the first ion trap. In one embodiment, the RF voltages applied to the second ion trap to contain the ions are at a higher frequency than that applied to the first ion trap. Other embodiments are described and claimed.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: November 15, 2011
    Assignee: California Institute of Technology
    Inventors: John D. Prestage, Sang K. Chung
  • Photoelectrochemical etching of P-type semiconductor heterostructures
    Patent number: 8053264
    Abstract: A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: November 8, 2011
    Assignee: The Regents of the University of California
    Inventors: Adele Tamboli, Evelyn Lynn Hu, Mathew C. Schmidt, Shuji Nakamura, Steven P. DenBaars
  • Integrating multiple design systems in a CAD system
    Patent number: 8055482
    Abstract: A method, apparatus, and article of manufacture provide the ability to integrate multiple engineering design systems in a computer aided design (CAD) system. A design generator is displayed and used to create an engineering design that has different worksheets. Each worksheet represents a different aspect of the design, has local design objects that represent functional aspects of a component that are independent from the component's physical representation, and relation objects that models constraints for properties of the design objects. The objects are organized into a functional layout document (FLD) that is stored in a data center/database that is shared by the worksheets. The FLD is then used to design an engineering design/model.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: November 8, 2011
    Assignee: Autodesk, Inc.
    Inventors: Sikandar Saifullah, Katrin Eleanor Grunawalt, William Fredrick Glasgow McCord
  • Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
    Patent number: 8044383
    Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: October 25, 2011
    Assignee: The Regents of the University of California
    Inventors: Hong Zhong, Anurag Tyagi, James S. Speck, Steven P. DenBaars, Shuji Nakamura