Abstract: Palladium-silver alloy may be electroplated from lithium chloride bath solution to result in coatings useful for electrical contacts. Increased corrosion resistance relative to wrought contacts of the same composition permit relatively large amounts of silver.

Abstract: Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

Abstract: Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BCl.sub.3 -Cl.sub.2.

Abstract: Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect--the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis.

Abstract: A preform for fabrication of a glass fiber optical transmission line is prepared by chemical reaction of vapor ingredients within a glass tube. Reaction, which may be between chlorides or hydrides of, for example, silicon and germanium with oxygen, occurs preferentially within a constantly traversing hot zone. Flow rates and temperature are sufficient to result in glass formation in the form of particulate matter on the inner surface of the tube. This particulate matter deposits on the tube and is fused with each passage of the hot zone. Continuous rotation of the tube during processing permits attainment of higher temperatures within the heated zone without distortion of the tube.

Abstract: Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of fluorocarbon-halogenation combinations as exemplified by CF.sub.3 Cl.

Abstract: A class of elements is dependent upon induced absorption for transmitted energy. Absorption is introduced by first pumping an active medium to produce a first excited state--generally an electronically excited state--whereafter the energy level of such excited state is reduced to a lower "metastable" excited state or by pumping directly to such metastable state. Increased absorption for radiation of a quantum energy corresponding with the difference between the metastable and some higher excited state occurs during the time interval that population of the metastable state is maintained. Elements may operate as extremely rapid shutters, switches, modulators, pulse sharpeners, etc.

Abstract: High density fine-line integrated structure fabrication is expedited by use of plasma etching systems which assure straight vertical walls (absence of undercutting). Critical to the sytems is choice of appropriate plasma chemistry. Appropriate systems are characterized by inclusion of recombination centers, as well as active etchant species. Recombination centers which effectively terminate etchant species lifetime in the immediate vicinity of resist walls afford means for controlling etching anisotropy. Use is foreseen in large scale integrated circuitry (LSI) and is expected to be of particular interest for extremely fine design rules, i.e., in Very Large Scale Integrated circuitry.

Abstract: Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

Abstract: Fabrication of fine dimensioned circuits, e.g., VLSI includes at least one lithographic step dependent upon members of a particular category of polymer resists. Such resists, generally negative acting, are characterized by high contrast due to unusually narrow molecular weight distribution of the polymer molecules. This distribution is in turn dependent upon choice of a base polymer which is itself characterized by narrow molecular weight distribution due to "living polymerization" (solution anionic, polymerization). Functionalization of such base polymer is designedly such as to retain narrow distribution. Chlorinated polystyrene is exemplary of the resist category.

Abstract: Devices of the nature of magnetic bubble devices, but in which "bits" take the form of light spots, are described. A prototypical device takes the form of an electroluminescent, photoconducting film straddled by orthogonal arrays of insulated strip electrodes forming closely spaced intercept positions so arranged that during operation such intercepts are sequentially biased. A light spot once nucleated--e.g., through a combination of electroinduced and photoinduced luminescence, is stepped by applying bias below nucleation threshold. Devices may serve a variety of memory and/or logic functions.

Abstract: Negative resist compositions are based on carbonaceous polymers with substituent branches containing epoxy groupings. Exemplary materials which include, for example, a copolymer of glycidyl methacrylate and ethyl acrylate in which epoxy groupings are unesterified show high sensitivity, for example, to electron radiation and to X-rays. Resolution is sufficient to permit expedient fabrication of detailed resist patterns for integrated circuits. High adherence permits use of acid or base reagents and thermal stability permits use of ion milling for circuit fabrication.

Abstract: Amorphous niobates and tantalates of the alkali metals lithium, potassium, and sodium which may be off-stoichiometric with regard to the related octahedrally coordinated crystalline compositions manifest high values of dielectric constant and ionic conductivity. Electrode bearing devices may be utilized, inter alia, as capacitors, electrolytic cells, and bolometers.

Abstract: Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/p-InP cell which shows a 12.5% solar power conversion efficiency and also emits a red colored light when biased.

Abstract: Liquid-semiconductor photocells are described which produce a stable photocurrent output over extended periods of time by controllably removing material from the semiconductor surface in such a manner as to maintain the integrity of the junction characteristics. The removal may be either by photoetching or by chemical reaction with the electrolyte or with agents added to the electrolyte.

Abstract: The condensation product of oxalyl dihydrazide and 3,5-di-tertiary-butyl-4-hydroxy aryl carbonyl compounds is found to stabilize polyethylene against oxidative degradation. Stabilizer effectiveness is retained with the polymer in contact with copper. Stabilized polymers are effectively utilized as wire insulation.

Abstract: A single mode optical transmission line consisting of a core and a clad, both formed from essentially the same type of multicomponent glass, e.g. borosilicate, for use with electromagnetic energy having a wavelength between 0.5.mu.m and 2.0.mu.m. The core has a higher refractive index than the clad because the relative concentrations of the constituents of the glass composition are varied between core and clad, e.g., the ratio of SiO.sub.2 /B.sub.2 O.sub.3 concentrations is higher in the core than in the clad.

Abstract: The ruthenium compound [Ru.sub.2 N(H.sub.2 O).sub.2 Cl.sub.8 ]K.sub.3 is prepared by refluxing a mixture of hydrated water soluble ruthenium chloride, having approximately 40% ruthenium content, and sulphamic acid, the latter having approximately half the molar concentration of the former, for several hours and then precipitating the desired compound by adding solutions of potassium chloride and hydrochloric acid. Electrical contacts on the reeds of sealed reed switches produced by electroplating from an aqueous solution of the salt produced in this manner are found to be particularly resistant to the thermal shock involved in the sealing of the switches.

Abstract: Alloy compositions based on ternary alloys of the chromium-cobalt-iron system modified by addition of zirconium molybdenum, niobium, vanadium, titanium, and/or aluminum, are found to manifest improved formability. Exemplary compositions are magnetic and evidence coercivities of 350-550 Oe., remanent magnetizations of from 10,000 - 7,500 Gauss, and maximum energy products in excess of one million. Improvement in formability may take the form of room temperature stamping, sometimes in air, to final configurations including curvatures of radius equal to thickness. Novel compositions particularly desirable from such standpoint necessarily contain zirconium together with aluminum, niobium, and/or titanium.

Abstract: The condensation products of oxalyl dihydrazide and 3,5-di-tertiary-butyl-4-hydroxy aryl carbonyl compounds are found to stabilize polyethylene against oxidative degradation. Stabilizer effectiveness is retained with the polymer in contact with copper. Stabilized polymers are effectively utilized as wire insulation.