Abstract: The bottom and the sides of a lower part of recess formed in the substrate has an insulating structure. A first part of the conductive structure of a first electric conductivity type is located in the lower part of the recess. A second part of the conductive structure of a second electric conductivity type, lower than the first type, is located in an upper part and borders the region of the substrate at the sides of the recess. The conductive structure has a diffusion barrier between its first and second parts. The conductive structure is configured as a bit line of a DRAM cell configuration with a vertical transistor, whereby S/Du represents the lower source/drain area and S/Do represents the upper source/drain area connected to a memory capacitor. Or, the conductive structure is configured as a memory capacitor and the upper source drain/area is connected to a bit line.

Abstract: The invention is a diode having at least one trench in the semiconductor substrate and insulation configured on the surface of the semiconductor substrate so that the trench limits the depletion region of the diode and the area over which an electrode is in direct contact with the diffusion region of the diode is limited by the insulation. The diode has the advantage that the extent of the depletion region, and thus the area capacitance of the diode, and the size of the electrode are decoupled from one another. The lateral extent of the depletion region can be chosen independently of the size of the electrode.

Abstract: An integrated memory with a configuration of non-volatile memory cells based on ferromagnetic storage contains both powerful memory cells with a magnetoresistive effect with a transistor control and cost-effective memory cells with a magnetoresistive effect with memory elements connected between the word lines and bit lines. The memory elements connected directly between the bit line and the word line are preferably inserted in memory cell arrays that can be stacked one above the other above the memory cells with the transistor, and thereby achieve a high integration density. The fact that the memory, which contains both types and thereby satisfies all the system requirements, is fabricated in one module and in one process sequence considerably lowers the fabrication costs.

Abstract: A proximity sensor with a sensor head for generating sensor signals is described. The proximity sensor is divided into a fastening portion containing a sensor head, and an electronics portion that can be connected to the fastening portion and has at least a sensor-signal evaluation unit and a power supply. The sensor signals pass from the fastening portion to the electronics portion via electrical contacts or contactlessly. Furthermore, a modular system for forming proximity sensors is proposed, and contains a multiplicity of fastening portions, respectively containing a sensor head, with different dimensioning and, connectable herewith, in each case identical electronics portions.

Abstract: A baking oven for producing baked molded bodies has a baking line that extends along a plane from an input station to an output station. The baking molds are each formed of a bottom baking plate and a top baking plate that is set down onto the top surface of the lower baking plate. The baking molds are transported through the baking line by a lower conveyor that carries the lower mold halves. An upper conveyor above the baking line transports the upper mold halves through their path of revolution above the plane of the baking line with the plates suspended and substantially horizontally aligned and with the baking surfaces always facing down. At the beginning of the baking line, the upper conveyor sets the top baking plates, which are substantially horizontally aligned, down onto the bottom baking plates for forming the baking molds, and at the end of the baking line, it lifts them from the bottom baking plates for opening the baking molds.

Abstract: A temperature sensor is integrated together with an integrated circuit on a chip, the sensor delivering a temperature-dependent measuring signal or at least emitting a signal when the chip temperature falls below a specific prescribed value. For such an eventuality, the chip includes a special circuit device thereon, by which a current flow is generated through a provided structure of electrical conductors that keeps the temperature of the integrated circuit above a prescribed minimum temperature.

Abstract: An interface unit and a printed circuit board configuration includes at least two interface units for linking conventional commercially available packages of integrated circuits on a printed circuit board in a more flexible and compact way, which allows compact high-performance electronic circuits to be produced on a small surface area and with low development expenditure.

Abstract: A guide wire installation device for a catheter includes a pair of elongated main sections arranged to face each other. Each main section includes a gripping portion at one side, and a holding portion at the other side thereof. The holding portion has first and second grooves communicating with each other. The first groove has a size greater than that of the second groove. When the holding portions abut against each other, a hollow portion is formed by the first grooves, and a receiving hole communicating with the hollow portion is formed by the second grooves. The catheter can be held at the receiving hole, so that the guide wire or syringe for saline can be inserted through the hollow portion.

Abstract: An electrically conductive layer or layer sequence preferably includes a metal-containing layer applied to a metal silicide or a polysilicon layer to reduce the resistance of buried bit lines. The layer or layer sequence has been patterned in strip form so as to correspond to the bit lines and is arranged on the source/drain regions of memory transistors having an ONO memory layer sequence and gate electrodes that are arranged in trenches. The metal silicide is preferably cobalt silicide, and the metal-containing layer is preferably tungsten silicide or WN/W.

Abstract: A computer programmed to process a method for generating a sequence of random numbers of a 1/f noise has the following steps: 1). Determining a constant step &dgr; or instants of consideration t0 to tn; 2). Determining a desired spectral value &bgr;; 3). Determining the number n of the random numbers, to be generated, of a 1/f noise; 4). Determining an intensity constant const; 5). forming a covariance matrix C of dimension (n×n); and 6). Forming the Cholesky decomposition L of the covariance matrix C, with the following steps being carried out for each sequence, to be generated, of random numbers of a 1/f noise: 1). Forming a vector x of length n from random numbers normally distributed in [0,1], and 2). Generating a vector y of length n of the desired 1/f-distributed random numbers by multiplying the Cholesky-decomposition L by the vector x.

Abstract: A system for bidirectional signal transmission of an electrical signal from a transmitter at a first location to a receiver at a second location, and from a transmitter at the second location to a receiver at the first location via a common transmission line forms, with each receiver, a line termination for matching the received electrical signal. Each transmitter is in the form of a combined transmission/termination circuit configuration which may in each case be operated in a transmission operating mode and in a reception/termination operating mode. A control circuit produces an operating mode control signal. Each transmission/termination circuit configuration is configured such that it can be switched either to the transmission operating mode or to the reception/termination operating mode depending on the operating mode control signal which is supplied from the control circuit. A method for bidirectional signal transmission of an electrical signal is also provided.

Abstract: The invention relates to a temperature sensor having a first FET transistor circuit and a second FET transistor circuit and also to a method for operating a temperature sensor. Both FET transistor circuits are operated at an operating point that lies outside the temperature-independent operating point. The difference between the voltages at the first and second FET transistor circuits is evaluated as a measure of the temperature at one of the FET transistor circuits. The invention enables the temperature sensor to provide a relatively large output signal even in the case of only small changes in temperature.

Abstract: A remote control, particularly for wireless remote control of a closing device in a motor vehicle, has a first transmitter for outputting an optical signal, and a second transmitter for outputting a radio signal. The two transmitters are able to be activated for signal output by at least one actuation element. An input of the first transmitter and/or of the second transmitter is connected to a clock transmitter in order to output the optical signal and/or the radio signal in pulsed fashion at particular intervals of time in order to save energy. Also an associated remotely controllable device and a full remote control configuration are disclosed.

Abstract: The invention relates to an integrated bus signal hold cell that is coupled with a bus line via a common input/output, and that has at least two inverters for holding the last state of the bus line. The outputs of the inverters are coupled with each other's inputs, respectively. The input of the first inverter is coupled with the input/output. The output of the second inverter is coupled with the input/output. An additional input is provided via which the bus signal hold cell can be charged with a defined test signal. The invention also relates to an integrated bus system and a method for driving a bus signal hold cell and a bus system.

Abstract: A circuit configuration has a transmitter unit connected to a first signal line and a receiver unit connected to a second signal line and is coupled to the transmission unit via a third signal line and a control line. The transmission unit receives and transmits a first bit group to be transmitted and a subsequent, second bit group to be transmitted. The transmission unit respectively identifies a signal state change between bits in the transmitted first bit group and corresponding bits in the received second bit group and determines the number of signal state changes. On the basis of the number thereof, the transmission unit transmits the second bit group to the receiver unit in unaltered or altered form, with altered transmission being indicated by a control signal. By influencing the number of charge reversal operations during signal transmission, the circuit configuration permits an overall reduction in current drawn.

Abstract: An MRAM configuration has selection transistors and MTJ layer sequences lying in parallel with each other in a memory cell matrix. A considerable space saving can thus be achieved and therefore the MRAM configuration is less expensive to manufacture and has a greater packing density. In addition, the MRAM configuration allows a rapid read access with a minimal area requirement.

Abstract: A method is described for estimating channel impulse responses of a mobile radio channel with a broad bandwidth by a code division multiplexing method, and with a synchronization channel continuously transmitting sequences to mobile radio receivers. The sequences are provided for synchronization of each mobile radio receiver and are known to each of the mobile radio receivers. The transmitted sequences have pilot symbols for identifying the synchronization channel, and the pilot symbols are transmitted at points that are known to the receivers within a time slot. When searching for and identifying the synchronization channel, the pilot symbols and, possibly, further symbols and sequences which are known in the receivers, are evaluated to estimate the delay times and the complex amplitudes, of the mobile radio channel responses.

Abstract: A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.

Abstract: A configuration for multiplexing and/or demultiplexing the signals of at least two optical wavelength channels, is described. Provided in this case is a grating device having an optical grating, a first optical free beam region and a second optical free beam region. Accordingly, radiation is coupled into and out of the first free beam region via a coupling device which effects a flattening and/or widening of the field distribution of the light coupled in or out, at least in the plane of the first free beam region. This permits a transmission characteristic of the configuration to be flattened.