Abstract: A power transistor comprising a plurality of elementary transistors coupled in parallel and an identical number of current generators, each of which has a terminal coupled individually to the base of an elementary transistor is described. High power levels may be achieved with a transistor of this type without forward secondary breakdown taking place.
Type:
Grant
Filed:
May 21, 1985
Date of Patent:
June 9, 1987
Assignee:
SGS Microelettronica S.p.A.
Inventors:
Flavio Villa, Bruno Murari, Carlo Cini, Franco Bertotti