Patents Represented by Attorney Jackson E. Stanland
  • Patent number: 4543319
    Abstract: A method is provided for providing a polystyrene-tetrathiafulvalene (PSTTF)/deep-ultraviolet hydrid system which combines the advantages of E-beam or X-ray lithography systems with those of deep-UV conformable printing to produce low bias, high aspect ratio resist images over the topography of microelectronic devices.
    Type: Grant
    Filed: January 15, 1985
    Date of Patent: September 24, 1985
    Assignee: International Business Machines Corporation
    Inventors: Vivian W. Chao, Frank B. Kaufman, Steven R. Kramer, Burn J. Lin
  • Patent number: 4538067
    Abstract: A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.
    Type: Grant
    Filed: December 9, 1982
    Date of Patent: August 27, 1985
    Assignee: International Business Machines Corporation
    Inventors: Jerome J. Cuomo, James M. E. Harper, Gary A. Waters
  • Patent number: 4525722
    Abstract: Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and specifically hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.
    Type: Grant
    Filed: February 23, 1984
    Date of Patent: June 25, 1985
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Harbans S. Sachdev, Ari Aviram, Mark A. Wizner
  • Patent number: 4523971
    Abstract: This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.
    Type: Grant
    Filed: June 28, 1984
    Date of Patent: June 18, 1985
    Assignee: International Business Machines Corporation
    Inventors: Jerome J. Cuomo, James M. E. Harper, Harold R. Kaufman, James L. Speidell
  • Patent number: 4515650
    Abstract: The present invention provides a method for fabricating large grain semiconductor ribbons suitable for use in solar cells. A molten semiconductor material is discharged onto a rotating cylindrical surface which is rotating with linear velocity of not greater than 36 m/sec.
    Type: Grant
    Filed: December 31, 1981
    Date of Patent: May 7, 1985
    Assignee: International Business Machines Corporation
    Inventors: Praveen Chaudhari, Rene Muller
  • Patent number: 4496854
    Abstract: A superconducting circuit including at least two DC SQUID stages integrated on the same superconducting chip and coupled by a circuit providing efficient transfer of current from the first SQUID stage to the second SQUID stage with large bandwidth. Each SQUID stage is comprised of a superconducting loop having at least two Josephson devices therein, there being shunt resistors across the Josephson devices to render them nonhysteretic. The coupling means between stages is directly connected to the shunt resistors of the first stage and includes a transmission line and an impedance circuit for matching the impedance of the transmission line, where the impedance circuit provides a real impedance over a large frequency range up to approximately the frequency of Josephson oscillation of the Josephson devices in DC SQUID. Feedback from the second SQUID stage to the first SQUID stage improves the input dynamic range and linearity of the circuit.
    Type: Grant
    Filed: March 29, 1982
    Date of Patent: January 29, 1985
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Chung J. Chi, Arthur Davidson, Chang-Chyi Tsuei
  • Patent number: 4491432
    Abstract: Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and include nonaromatic azo compounds, peroxides, and strained valence compounds, such as monomers, dimers, trimers, of the type which change their chemical bonding when they decompose to either a valence isomer or break into a number of molecular species.
    Type: Grant
    Filed: December 30, 1982
    Date of Patent: January 1, 1985
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Kwang K. Shih
  • Patent number: 4491431
    Abstract: A resistive ribbon printing technique is described in which the ribbon includes a resistive layer comprised of a metal-wide bandgap insulator combination. The ribbon also includes a support layer, where the support function can be provided by the resistive layer, and a fusible ink layer. Electrical current through the resistive layer produces heat which locally melts the ink for transfer to an adjacent receiving medium. The wide bandgap insulator of the resistive layer must have a bandgap of at least three volts. Many different metals and insulators can be used, where the relative amounts of metal and insulator are chosen to provide a desired resistivity for any type of resistive ribbon printing application.
    Type: Grant
    Filed: December 30, 1982
    Date of Patent: January 1, 1985
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Kwang K. Shih
  • Patent number: 4476454
    Abstract: Devices and circuits are described employing magnetoresistive materials exhibiting a negative .DELTA..rho. effect (.DELTA..rho.=.rho..parallel.-.rho..perp.). In these materials, the electrical resistivity .rho. of the material in a direction perpendicular to the direction of current through the material is greater than the electrical resistivity .rho..parallel. of the material in a direction parallel to the direction of the electrical current through the material. These are ferromagnetic materials exhibiting magnetoresistance in the presence of an electrical current through the material and a magnetic field applied to the material to magnetize it to saturation at room temperature. These devices and circuits have advantages over conventional devices and circuits employing magnetoresistive materials of the conventional type, in which .DELTA..rho. is a positive quantity.
    Type: Grant
    Filed: June 30, 1983
    Date of Patent: October 9, 1984
    Assignee: International Business Machines Corporation
    Inventors: Joseph A. Aboaf, Erik Klokholm, Thomas R. McGuire
  • Patent number: 4471523
    Abstract: A process for making an integrated structure comprised of complementary MOS devices is described, where electrical isolation is provided by recessed field oxide regions and by field isolation implant regions. Starting with a single conductivity type semiconductor layer, such as P- type silicon, a first masking step is used to produce an N- type well therein. After this, a layer of silicon or silicide is formed through the same mask. In a second masking step, openings are made for the field isolation implant regions. The edge of the silicon or silicide layer determines the edge of the field isolation implant, which is therefore self-aligned to the edge of the well. This same mask is later used to determine the locations of the recessed oxide isolation regions. Subsequent masking steps are used to form polysilicon gate electrodes, source and drain regions of the active devices, contact holes and contact metal and interconnects.
    Type: Grant
    Filed: May 2, 1983
    Date of Patent: September 18, 1984
    Assignee: International Business Machines Corporation
    Inventor: Genda J. Hu
  • Patent number: 4466177
    Abstract: A process for providing different insulator systems for the storage capacitor and the FET in a single polysilicon one-device memory cell, such as a dynamic RAM cell, without requiring an additional masking level. In particular, the Hi-C or diffusion store ion implantation mask is used to implement this feature. This process can be used to provide different materials in the insulator system of the storage capacitor and the FET, or the same materials with different thicknesses.
    Type: Grant
    Filed: June 30, 1983
    Date of Patent: August 21, 1984
    Assignee: International Business Machines Corporation
    Inventor: Hu H. Chao
  • Patent number: 4453086
    Abstract: In electron beam testing systems wherein high energy, high resolution electron beams are used to test lithographic masks, a technique and apparatus are described for discharging electrons which are left on the surface of the mask, and which alter the input trajectory of the electron beam. The materials used in these masks are such that induced photoconductivity and photoemissivity are extremely low and are incapable of providing sufficient electron discharge. A thin, low work function coating is applied over the entire mask surface, the coating being transparent to the radiation which will later be incident upon the mask when it is used in a fabrication process. Due to induced photoemission in the thin coating layer, enough photoemitted electrons will be produced to balance the buildup of electrons from the electron beam, thereby discharging the surface of the mask. The electron beam is a high energy beam, having energies greater than about 5000 eV, and a resolution less than about 1 micrometer.
    Type: Grant
    Filed: December 31, 1981
    Date of Patent: June 5, 1984
    Assignee: International Business Machines Corporation
    Inventor: Warren D. Grobman
  • Patent number: 4451503
    Abstract: A method for depositing a refractory metal onto a substrate wherein a carbonyl compound vapor of the metal in the vicinity of or on the substrate is photodecomposed by ultraviolet radiation of wavelengths less than 200 nm. This causes the release of atoms of the metal, which then condense onto the substrate. In an example, a tungsten layer is photodeposited by this method onto a GaAs semiconductor layer to form a Schottky barrier diode.
    Type: Grant
    Filed: June 30, 1982
    Date of Patent: May 29, 1984
    Assignee: International Business Machines Corporation
    Inventors: Samuel E. Blum, Karen H. Brown, Rangaswamy Srinivasan
  • Patent number: 4447126
    Abstract: An improved optical printing head is described including a linear array of light sources, and a lens array comprised of graded index optical fibers arranged in a hexagonal close-packed array, there being at least three rows of individual fiber lenses. The linear array of light sources is aligned with, and parallel to, lines of symmetry of the graded index lens array, where the lines of symmetry are defined as lines along said graded index lens array which will transmit a line of light incident thereon with a minimum deviation in the intensity of light transmitted through the lens array. A photosensitive surface on a rotating drum is provided onto which light images from the optical printhead are incident. The print head can be used in optical printing machines.
    Type: Grant
    Filed: July 2, 1982
    Date of Patent: May 8, 1984
    Assignee: International Business Machines Corporation
    Inventors: Paul F. Heidrich, Robert A. Laff, Thomas B. Light
  • Patent number: 4440801
    Abstract: A method for selective electroless deposition of a metal (Cu, Ni, Au, Ag) onto a polyester substrate, such as poly(ethylene terephthalate) is described. A combination of ultraviolet exposure of wavelengths <220 nm and a pre-treatment step is used to obtain selective electroless deposition. The polyester layer is first irradiated with uv light of wavelengths <220 nm and is then subjected to a pre-plating pre-treatment with a basic solution. After this, the desired metal is deposited by conventional electroless deposition. Substantial deposition will occur only in those areas which were both exposed to the uv light and subjected to the pre-plating treatment.
    Type: Grant
    Filed: July 9, 1982
    Date of Patent: April 3, 1984
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Veronica I. Mayne-Banton, Rangaswamy Srinivasan
  • Patent number: 4441088
    Abstract: A transmission line having substantially reduced far-end forward wave crosstalk is characterized by a single layer of dielectric material having a thickness chosen to provide a forward wave coupling constant K.sub.F substantially equal to zero. The dielectric layer is located on a ground plane, and has a plurality of signal carrying conductors embedded in it. The thickness H of the dielectric underlayer below the signal carrying conductors is chosen to provide a transmission line having the selected values of impedance, etc. and substantially reduced forward wave crosstalk. The thickness t of the dielectric overlayer above the signal carrying conductors is chosen (for the selected value of thickness H of the dielectric underlayer) at the finite value critical thickness at which forward wave mutual capacitance and forward wave mutual inductance cancel to a null. The ground plane and the signal carrying conductors can be superconductors.
    Type: Grant
    Filed: December 31, 1981
    Date of Patent: April 3, 1984
    Assignee: International Business Machines Corporation
    Inventor: Carl J. Anderson
  • Patent number: 4429992
    Abstract: Optical imaging systems are used for making microstructures, and have to be very precise. In order to test these imaging systems, a new method, and a device for carrying out this method, are described in which two interferograms are made and compared. In a first step, an interferogram of an original pattern is made, followed by a second step in which an interferogram of a copy of the original pattern is produced using the identical conditions used to form the first interferogram. The pattern copy is made in the imaging system to be tested. In a third step, the two interferograms are compared with one another to provide a measure of the accuracy of the imaging system. This technique can be used for testing imaging systems which produce only a mirror image.
    Type: Grant
    Filed: May 22, 1981
    Date of Patent: February 7, 1984
    Assignee: International Business Machines Corporation
    Inventors: Gerd Haeusler, Walter Jaerisch, Guenter Makosch
  • Patent number: 4417948
    Abstract: A technique is described for photoetching polyesters, such as polyethylene teraphthalate (PET), efficiently, and without causing degradation or heating of the bulk of the PET material. At least about 1000.ANG. of the polyester are removed by application of ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, irradiation can occur in the presence of oxygen or air.
    Type: Grant
    Filed: July 9, 1982
    Date of Patent: November 29, 1983
    Assignee: International Business Machines Corporation
    Inventors: Veronica I. Mayne-Banton, Rangaswamy Srinivasan
  • Patent number: 4414059
    Abstract: A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition. This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm.sup.2 /pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments. No subsequent development step is required for patterning the resist layer.
    Type: Grant
    Filed: December 9, 1982
    Date of Patent: November 8, 1983
    Assignee: International Business Machines Corporation
    Inventors: Samuel E. Blum, Karen H. Brown, Rangaswamy Srinivasan
  • Patent number: 4414069
    Abstract: A negative ion etching process is described for etching a substrate, where the negative ions are sputtered from a target by a sputtering gas. The negative ions are released from the target and are accelerated toward the substrate, which they strike as either negative ions or energetic neutrals. The improvement adds an inhibiting substance (hydrogen) to the sputtering gas to dramatically affect the etch rates of the substrate. In one example, the ratio of the etch rates of Si and SiO.sub.2 are changed by large amounts by the addition of hydrogen to a sputtering gas comprising an inert species, such as argon.
    Type: Grant
    Filed: June 30, 1982
    Date of Patent: November 8, 1983
    Assignee: International Business Machines Corporation
    Inventor: Jerome J. Cuomo