Abstract: A multi-axis rotary seal system to provide a gas-tight seal between a stationary hood and the end of a rotating tube kiln comprises a stationary hood positioned at the end of the rotary tube and having extended therefrom, a fully flexible bellows attached at the other end to a structural ring which, in turn, is attached to a graphite ring, slidably pressed against a flange on the rotary tube to form an atmospheric seal. The structural ring is held to the stationary hood by multi-axis supports that allow movement of the ring in three axial directions. In operation, during expansion and contraction of the rotating tube and eccentricities of motion, the integrity of the slidable seal formed by the graphite ring against the mating surface of the tube flange, is maintained by a biasing device pressing the graphite ring and the tube flange together in slidable engagement.

Abstract: A robotic loader for machinery includes an elongate column configured for being fixedly secured to a support structure or surface. A first motor is attached to the end of the column. The first motor drives a first gearbox. A first arm is fixedly secured to the first gearbox and extends perpendicularly relative to the column. The first arm is rotated in a horizontal plane when the first motor drives the first gearbox. A second motor is attached to the end of the first arm. The second motor drives a second gearbox. A stub arm is attached to the second gear box. The stub arm is parallel with the first arm. The stub arm is rotated in a horizontal second plane when the second motor drives the second gearbox. A third motor is attached to the stub arm and drives a third gearbox. A link arm is attached to the third gearbox and extends therefrom in a parallel manner relative to the first arm. The link arm is rotated in a vertical plane when the third motor drives the third gearbox.

Abstract: A DC-to-DC converter has a pulse width modulator PWM) and a hysteretic (ripple) modulator. For low current loads, the hysteretic modulator is selected; for high current loads, the PWM is selected. A mode selection switch senses the polarity of the switched output voltage at the end of each switching cycle. If the polarity changes from one cycle to the next, the mode may be instantly changed to the other mode. Counters are used to record the polarity at the end of each cycle and switching from one mode to another can be delayed by the counters to prevent changing modes based on spurious output voltage fluctuations.

Abstract: A combination flow regulator and conservation device, for oxygen gas or oxygen concentrated gas, attachable to an oxygen tank or wall outlet of a master oxygen system and containing a gas regulator and a control circuit to control both the effective rate and timing of the flow of gas through the device, the control circuit selectively controlling the device to supply the gas to a user in one of at least three selectable modes of operation, the modes including (1) a continuous flow of gas, (2) an intermittent pulse of gas to be supplied on every inhalation stage of the breathing cycle of the user for a variable period of time during the inhalation stage, and (3) an intermittent pulse of gas to be supplied only during selectable inhalation stages of the breathing cycles of the user.

Abstract: A process for forming non-spherical toner particles by limited coalescence comprises: forming an organic phase comprising a polymeric material, a pigment, a quaternary ammonium tetraphenylborate salt, a phosphonium salt polymer formed by condensation of at least one dicarboxylic acid or dicarboxylic ester monomer with at least one diol monomer, at least one of the acid or ester monomers including a triarylphosphonium salt group, and a water-immiscible liquid; dispersing the organic phase in an aqueous phase containing a solid colloidal stabilizer; forming a suspension of small droplets of the organic phase in the aqueous phase by high shear agitation; removing the water-immiscible liquid from the small droplets, thereby forming a suspension of small solid particles in the aqueous phase; and separating and drying the solid particles, which are toner particles having a non-spherical shape.

Abstract: A garment includes a jacket portion and a bag portion. The jacket portion having a back side which includes an outer shell and an inner shell. A pocket is defined between a portion of the outer shell and the inner shell. The inner shell defines an orifice which provides access to the pocket. A fastener associated with the orifice is configured for selectively opening and closing the orifice. The bag portion is integral with the jacket portion, and is disposed within the pocket. The bag portion has flexible sides which define a bag opening. A fastener is associated with the bag opening and is configured for selectively providing access to an interior of the bag portion. The bag portion has a volume sufficient to store at least the jacket portion. The bag portion is configured to be removed from the pocket and turned inside out. The bag portion receives the jacket portion therein, thereby forming a duffel bag.

Abstract: The invention provides water enriched with ozone by generating ozone from oxygen using short-wavelength ultraviolet light and pumping the generated ozone under pressure through a 0.1-micron filter into a sealed housing of deionized water. The filter is fabricated of a material such as polytetrafluoroethylene which does not react with water and ozone. The filter apertures are sufficiently small to prevent the formation of gas bubbles in the outlet fluid. The highly-purified outlet fluid is usable immediately in semiconductor wafer cleaning.

Abstract: A power metal oxide semiconductor-field-effect-transistor (MOSFET) device using trench technology to achieve a reduced-mask-production process. The power MOSFET device includes a gate signal bus having multiple gate trenches formed using fewer masks than previously required for a similar device. The two-dimensional behavior of the trenches provides an advantageous field-coupling effect that suppresses hot-carrier generation without the need for the commonly used thick layer of silicon dioxide beneath the gate poly-silicon. The use of easily controlled silicon trench etching in production of the power MOSFET results in stable, low cost, and high yielding manufacturing.

Abstract: This invention is directed to a method of using relaxing to treat androgenetic alopecia.

Abstract: A method of making an integral plated and solder clad cover lid for electronic packages is disclosed. The cover lid is plated and or clad with a first corrosion resistant and solderable material and is clad with a solder material on one side. The cladded substrate is stamped and then plated with a second corrosion resistant and solderable material. The second material is subsequently sintered and preferentially diffused into the solder material resulting in a visual distinction between the solder side of the cover lid and the backing side.

Abstract: Image systems are compared and evaluated using an eyetracking apparatus. An observer views images made with different image systems. The eyetracking apparatus records the horizontal and vertical gaze position as a function of time. The observer's judgments for one image system are compared to results for another image system.

Abstract: A high speed copier 10 has a transfer roller 42 and a cleaning brush 52. The cleaning performance is improved when the engagement of the two rollers exceeds a first threshold T1. Their engagement is maintained below a stall threshold T2.

Abstract: This disclosure describes variety of MOS gated devices constructed with alternating conductivity type lower zones. These zones are used for depleting charge when blocking voltage is applied. When alternating zones are incorporated in the devices they allow use of a much higher conductivity material for drain construction, which in turn reduces device on-resistance and improves their efficiency. The method of creation of these new innovative structures with very small sizes (cell pitches) is also proposed.

Abstract: An improved trench-gated power device comprises a substrate having an overlying layer of epitaxial material disposed on an upper layer of the substrate, well regions containing source and body regions, a trench gate, and a drain region. The improvement comprises a gate trench having beneficially smooth sidewalls that comprise selectively grown epitaxial material and body regions that are recessed with respect to adjacent source regions. In a process for forming an improved trench-gated power device, a dielectric layer having an upper surface and thickness and width dimensions that substantially correspond to the height and width dimensions of a gate trench is formed on an upper layer of the substrate. A layer of epitaxial material is grown on the upper layer of the substrate and the dielectric layer and planarized to be substantially coplanar with the upper surface of the dielectric layer, which is then removed, thereby forming gate trench sidewalls that comprise selectively grown epitaxial material.

Abstract: The invention provides a pair of parallel megasonic transducers that generate parallel columns of megasonic waves across a cleaning container. Semiconductor wafers move back and forth transverse to the columns. The transducers have their back side potted with a silicone elastomer to prevent corrosion. In another embodiment megasonic waves from in-line transducers are dispersed with a cylindrical quartz rod. Water is enriched with ozone by pumping ozone under pressure through a filter into sealed housing of deionized water.

Abstract: A hand-held foaming apparatus includes a pressure vessel for containing a foamable liquid and an air space overlying the liquid. A hand pump is mounted within the vessel and sealably connected to a sealable opening at the top of the vessel. The pump comprises an external handle connected to a piston that extends substantially to the bottom of the vessel. Actuating the pump by operating the handle causes formation of foam from the foamable liquid in the overlying air space and discharge of the foam from a foam discharge outlet that comprises foam discharge control means and an interchangeable nozzle and is located on the vessel above the air space.

Abstract: The present invention is directed to an improved trench MOS gate device that comprises a trench whose floor and sidewalls include layers of dielectric material, the layers each having a controlled thickness dimension. These thickness dimensions are related by a controlled floor:sidewall layer thickness ratio, which is established by individually controlling the thickness of each of the floor and sidewall dielectric layers. This floor to sidewall layer thickness ratio is preferably at least 1 to 1, more preferably at least 1.2 to 1. Further in accordance with the present invention, a process for forming an improved trench MOS gate device comprises etching a trench in a silicon device wafer and forming layers of dielectric material on the trench floor and on the sidewalls, each layer having a controlled thickness dimension. The thickness dimensions are related by a controlled floor to sidewall layer thickness ratio that is preferably at least 1 to 1.

Abstract: An improved MOS-gated power device 300 with a substrate 101 having an upper layer 101a of doped monocrystalline silicon of a first conduction type that includes a doped well region 107 of a second conduction type. The substrate further includes at least one heavily doped source region 111 of the first conduction type disposed in a well region 107 at an upper surface of the upper layer, a gate region 106 having a conductive material 105 electrically insulated from the source region by a dielectric material, a patterned interlevel dielectric layer 112 on the upper surface overlying the gate and source regions 114, and a heavily doped drain region of the first conduction type 115. The improvement includes body regions 301 containing heavily doped polysilicon of the second conduction type disposed in a well region 107 at the upper surface of the monocrystalline substrate.

Abstract: A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30. Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with polysilicon 34. A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride 50 cover the trenches and the adjacent device substrate regions.