Abstract: A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.

Abstract: A solder paste mixture for soldering surface mount devices to a circuit board using a reflow soldering process which utilize a vapor phase furnace. The solder paste mixture has a metallic content which is 63% tin and 37% lead. The metallic content of the paste consists of 150 micron particles of 100% tin and 150 micron particles of an alloy of 10% tin and 90% lead. Included in the process of soldering components to the circuit board is the step of prebaking the circuit board with solder paste and components in their proper place on the board.

Abstract: Tungsten is rapidly and anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a bromine source (such as HBr), plus a hydrocarbon source (e.g., an alkyl, such as methane).

Abstract: The described embodiment of the present invention provides a method and device for cleaning the surface of a silicon wafer using dry gases. At least one of the gases provided is excited by passing the gas through a microwave plasma generator or by heating the wafer thereby exciting the gases near the surface of the wafer. The excitation of the gases causes chemical reactions similar to those induced by ionization of the nongaseous cleaning materials in water. After a suitable etching period, the etching chamber is purged using an insert gas, such as nitrogen, which helps carry away the remaining reacted contaminants.

Abstract: An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.

Abstract: A processing system wherein the process gas flow passages have a modified contour which reduces particle entrainment. This modified cross section increases the thickness of its stagnant boundary layer near most of a wall area of the piping, so that any particle which is deposited on the walls of the gas piping is much more likely to stay there permanently, and not be removed by subsequent local velocity maxima in turbulent flow.

Abstract: A system and method for determining the pattern development endpoint of a photoresist polymer during spin/spray processing of a semiconductor wafer utilizes the optical transmission of the waster developer liquid during the pattern develop process to determine when the developing is completed.

Abstract: A process for etching silicon nitride which utilizes free radicals from a remote plasma generated using a fluorine containing gas; and hydrogen; to produce an etch which is selective to selected materials, for example, silicon and silicon dioxide.

Abstract: A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.

Abstract: Disclosed is a test system and a method for providing a timing function that dynamically calculates and adjusts the phase delay between an internal timing reference and an externally derived signal. This is accomplished by providing a timing generator for providing a master timing reference signal, first, second and third counters preset at the beginning of each test cycle to each provide a count responsive to the timing reference signal, first and second multiplexers, each associated with one of the first and second counters, and first and second comparators for comparing the contents of each of the first and second multiplexers with the count of an associated counter and producing a timing edge when a count match occurs.

Abstract: A process for etch of Copper doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of BCl.sub.3, Cl.sub.2, and a source of hydrocarbons with the process chamber within the process module being generally at ambient temperatures.

Abstract: A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet completed, to maintain the balance of chemistries which provides selectivity and anisotropy. In a tungsten etch, WF.sub.6 is usefully added during the post etch period to provide this loading.

Abstract: An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.

Abstract: A thermoelectric heat pump is used to maintain the temperature of an integrated circuit under test. Temperature sensors placed on two sides of the integrated circuit measure and generate signals indicative of the temperature at the two surfaces, and the average of the two measured temperatures is compared against a value of a preset temperature to change the temperature of the heat pump to stabilize the temperature of the integrated circuit to a desired value.

Abstract: A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated form a mixture of a source of Fluorine and Helium with the process chamber within the process module being generally at ambient temperatures.

Abstract: A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafer handling steps.

Abstract: A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.

Abstract: A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

Abstract: A thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source, such as SF.sub.6, plus a bromine source, such as HBr, plus a hydrocarbon source, e.g., an alkyl, such as methane. This passivating chemistry provides a very robust passivant which will provide highly anisotropic high rate flow etching, and will also improve the selectivity to photoresist.

Abstract: Apparatus and method for cleaning material at the outer edge of an object by applying a solvent for the material to a flat surface adjacent the edge and moving the solvent onto the edge by centrifugal force.