Abstract: An integrated circuit structure for reducing propagation delay is described. Integrated circuits include at least a pair of regions in each of which are located a respective plurality of functional cells and which are spaced apart by an interconnection region in which interconnection lines are provided connecting elements of the functional cells of one functional cell region with elements of the functional cells of the other functional cell region. Field oxide is provided in the interconnection region substantially greater in thickness than the field oxide in the regions of the functional cells thereby substantially reducing the capacitance and hence propagation delay of the interconnection lines. Formation of the field oxide of the interconnection region independent of the formation of the field oxide in the functional cell regions enables optimization of the field oxide in the interconnection region for minimum propagation delay without compromising functional cell formation in the functional cell regions.

Abstract: A video processing system in which each field of image data is divided into rows and columns of blocks of picture elements. The number of blocks utilized is large enough so that when each block is considered to be a picture element, the blocks provide a reasonable raster for the peripheral vision aspect of the human visual perception system. The blocks of picture elements are transformed into blocks of spatial frequency components. The zero and low spatial frequency components of the blocks of spatial frequency transforms are updated at a sufficiently rapid rate to satisfy the requirements of the peripheral vision aspect of the human perception system. The higher spatial frequency components of the blocks of spatial frequency are updated at a lower rate corresponding to the rate at which the human perception system can respond to such information.

Abstract: A first surface charge transistor and a second surface charge transistor are provided in a common substrate. During a first phase of a cycle of operation a first voltage signal is applied to the transfer gate of the first transistor and a second voltage signal is applied to the transfer gate of the second transistor. During a second phase of the cycle of operation, the first voltage signal is applied to the transfer gate of the second transistor and the second voltage signal is applied to the transfer gate of the first transistor. During the first phase the source region and the transfer gate region of each of the transistors are equilibrated. The receiver regions or nodes of each of the transistors are precharged and then floated or isolated. During the second phase of the cycle, the receiver nodes accumulate an amount of charge proportional to the change of voltage resulting from the switching of the signals.

Abstract: A method for producing high resolution pattern in a thick layer of polymeric plastic resist is described. The method uses a thin top layer of photo resist in which the desired pattern is formed. The pattern is transferred to a thin metallic inter-layer by wet etching the metallic layer and is subsequently transferred to the thick layer of polymeric plastic by reactive ion etching in oxygen.

Abstract: A method of forming in a substrate of monocrystalline silicon semiconductor material having a major surface, a plurality of islands of silicon each including an active region of the substrate adjacent the major surface and surrounded by a body of silicon dioxide separating the islands from the substrate is described.

Abstract: A method is described for forming a desired pattern in a layer of polymethyl methacrylate resist formed on a substrate by irradiating the layer with a pattern of radiation substantially identical to the desired pattern and thereafter immersing the layer of polymethyl methacrylate in a solution of acetone to remove the irradiated portion of the layer of polymethyl methacrylate.

Abstract: A conductive film having low electrical resistance and having a high coefficient of transmission of radiation in the visible portion of the electromagnetic spectrum is described. The film consists of a thin layer of the intermetallic compound of gold and aluminum having the formula AuAl.sub.2.

Abstract: A voltage controlled semiconductor power switch including a bipolar transistor efficiently driven by a field effect transistor coupled between collector and base electrodes for providing a non-saturated conduction of the transistor and rapid switching speeds. The switch is employed in voltage converter circuits which require minimum dead time in the application of drive pulses, and have an efficient circuit operation and reduced circuit complexity.

Abstract: A method of enhancing the adhesion of polymethyl methacrylate to a surface of silicon dioxide utilizing a solution of carboxylic acid is described.

Abstract: A method of etching a desired pattern in a thin film of chromium deposited on a substrate is described. A layer of a masking material which is etch-resistant is formed on the film of chromium and provided with the desired pattern. Portions of the thin film of chromium uncovered by the patterned layer of etch-resistant material are covered with a thin layer of aluminum having a multiplicity of holes. The substrate including the layer of aluminum in contact with thin film of chromium is immersed in a dilute hydrochloric acid solution whereby the layer of aluminum and the portion of the thin film of chromium in contact therewith are dissolved thereby providing the desired pattern in the thin film of chromium.

Abstract: A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory metal to the substrate to form a layer of a compound of the refractory metal and silicon at the interface of the layer of refractory metal and the silicon substrate.

Abstract: A method of reducing lateral field oxidation in the vicinity of the active regions of integrated circuits is described. The method utilizes a three layered masking structure for masking the active regions during field oxidation including a first very thin layer of silicon nitride in contact with the active region of the substrate, a second thin layer of silicon dioxide overlying the very thin layer of silicon nitride, and a third thick layer of silicon nitride overlying the second layer of silicon dioxide.

Abstract: A method of reducing lateral field oxidation in the vicinity of the active regions of a silicon substrate in which integrated circuit elements are to be formed. Mesas, the tops of which are the active regions, are formed by ion beam etching of the silicon substrate. The mesas are protected by caps of silicon nitride overlying the top and sides of the mesas during field oxide formation. Subsequently the caps of silicon nitride are removed and the exposed sides of the mesas are oxidized to form a thick layer of silicon dioxide contiguous to the mesas.

Abstract: A filter utilizing charge transfer devices for providing recursive transfer functions with a transmission zero at d.c. or zero frequency is described. The filter includes a circular charge transfer shift register having an even number N of stages, greater than two, and first, second, third and fourth linear charge transfer shift registers. All five shift registers are clocked at the same frequency. A first input sequence of packets of charge representing positive weight components of a signal, and a second sequence of packets of charge representing negative weight components of the signal are provided. Means are provided for dividing each of the packets of charge of the first input sequence into a first part and a second part and for applying each of the first parts of the packets of the first input sequence to the input stage of the first shift register and for applying each of the second parts of the packets of the first input sequence to the input stage of the second shift register.

Abstract: A charge transfer device is described for the conversion of a sequence of samples of a signal occurring at high frequency into simultaneous data samples occurring at a substantially lower frequency and substantially longer duration.

Abstract: A filter is described utilizing charge transfer devices for providing exponential smoothing of sampled data signals with a transmission zero at a predetermined frequency. A first shift register is provided having N serially coupled stages to each of which is coupled a respective accumulator stage. A second shift register is provided having N serially coupled stages. A sequence of packets of charge is provided, each packet representing a respective sample of an input signal. Each packet of the sequence is divided into a first part and a second part, the ratio of the first part to the second part being equal to a first fixed value. Each of the first parts of the packets of the sequence is applied to the first shift register and is sequentially processed in successive stages thereof to provide an output. Each of the second parts of the packets of the sequence is applied to the second shift register and transferred from stage to stage to provide another output.

Abstract: A filter is described utilizing charge transfer devices for implementing transmission zeros. A first shift register is provided having a plurality of M stages, where M is an integer, each stage including a respective first charge storage region. A second shift register is provided having a plurality of N stages where N is an integer greater than M, each stage including a respective first charge storage region. A first sequence of packets of charge is provided, each packet representing a respective sample of an input signal. Each of the packets of charge of the sequence is divided into a first part and a second part equal to the first part. Each of the first parts of the packets of the first sequence is applied to the first shift register and transferred from stage to stage thereof at one frequency. Each of the second parts of the packets of the first sequence is applied to the second shift register and transferred from stage to stage thereof at the aforementioned one frequency.

Abstract: A charge transfer filter utilizing a charge transfer accumulator structure for exponential smoothing of sampled data signals is described. The charge transfer accumulator structure performs charge equilibration at high speed thereby enabling an exponential decay impulse response to be obtained at high speed.

Abstract: A charge transfer device is described which includes a plurality of charge transfer channels or shift registers, each having at least two sections operable at two different clock frequencies to provide variable non-symmetrical time delays in the channels and which may be operated with another identical charge transfer device to provide the functional equivalence of a single charge transfer device having twice as many channels and providing symmetrical time delays in the channels.

Abstract: A solid state relay having a light-emitting diode, an array of series connected photodiodes and a field effect transistor is described.