Abstract: A method of manufacturing a semiconductor device, in which on a basic mask of a first material there is provided a layer of a second material, after which the first material with the second material present thereon is removed, and an island of the second material remaining with a window of the basic mask is used as an alignment feature for a subsequent mask.

Abstract: A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a monocrystalline silicon substrate body by local diffusion of at least one impurity in a substantially flat surface of the substrate body and the substrate surface on said side is given a profile in a pattern which corresponds to the pattern of the highly doped zones, after which an epitaxial silicon layer is provided on said side and one or more semiconductor circuit elements are then formed while using at least one photoresist step, characterized in that the substantially flat substrate surface is given a crystal orientation lying between a {001} face and an adjacent {111} face, which orientation deviates at least 10.degree. from the said {001} face and at least 15.degree. from said {111} face and is present in a strip within 10.degree. from the crystallographic zone formed by the said two faces.

Abstract: An integrated circuit having multi-layer transistors which are separated from each other by means of tub-shaped or dish-shaped isolation zones. The isolation zones are of a conductivity type opposite to that of the zone of the circuit element which adjoins the inner wall of the tub-shaped zone and is present within the isolation zone, the p-n junction between the last-mentioned zone and the isolation zone being substantially short-circuited. As a result of this it is substantially prevented that the adjoining zone of the circuit element injects, via said p-n junction, charge carriers into the isolation zone, as a result of which the isolation is improved inter alia in that sense that the leakage current is reduced and higher breakdown voltages and smaller stray capacitances occur.

Abstract: A method and apparatus for detecting the presence of vapor-producing substances such as explosives contained within an item of baggage, in which the item of baggage is enclosed in a chamber and the air pressure in the chamber is varied cyclically in order to mix at least a portion of the air in the item of baggage with that in the chamber. A vapor detector is then used to detect the presence in the chamber air of vapors given off by an explosive substance or drug (e.g., cannabis) contained within the item of baggage.

Abstract: A method of manufacturing a semiconductor device, comprising the steps of providing a semiconductor body comprising a first surface and an underlying semiconductor portion that is of first conductivity type, providing a doping material of said first conductivity type at a first portion of said first surface prior to the formation of a sunken insulating layer, said first portion being situated beside said sunken insulation layer, forming an insulation layer consisting of insulating material and sunk locally in said body from said first surface, and then introducing said doping material into said semiconductor body via said first portion of said first surface so as to form a zone of said first conductivity type, said zone contacting said underlying semiconductor portion, and zone extending at the area of contact to a depth greater than that of said sunken insulation layer.

Abstract: Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.

Abstract: A line scanner comprising an array of CMOS pairs having a common resistive gate. The gate provides a potential gradient along the array in response to a potential difference across its ends, so that the CMOS pairs can receive a gating voltage in sequence when such potential difference undergoes a progressive change in magnitude.

Abstract: A photocathode structure containing a photocathode material, comprising a plate of single crystal gallium indium phosphide having major surfaces and relative proportions of gallium and indium such that the lattice parameter thereof is substantially the same as that of said photocathode material, and, an epitaxial layer of photocathode material located on a first said major surface of said crystal, the thickness of said layer of photocathode material being of the order of the diffusion length of electrons therein and at least part of a second said major surface of the gallium indium phosphide plate being substantially free from contact by solid material.

Abstract: An article transfer and inspection apparatus comprising chamber-defining means, substantially impermeable to x-rays; and x-ray source for directing x-rays to a first portion of said chamber; feed and extraction conveyor systems individually having at least a portion thereof outside the chamber and respectively serving to introduce and remove an article into and from the chamber, the feed conveyor system being operable at a first speed; an inspection conveyor system located between the feed and extraction conveyor systems and at least partly disposed at the chamber first portion, the inspection conveyor system being operable at a second speed at least equal to the first speed and serving to carry the article through the chamber first portion; and means for converting x-rays passing through the first portion and the article into a visual image.The apparatus can also include means for achieving a pre-determined spacing between various articles.

Abstract: A semiconductor device having a photosensitive semiconductor element, for example a photoresistor, having a photosensitive layer of high-ohmic material, preferably gold-compensated silicon, which is present on a high-ohmic substrate region and which is covered with a highly doped semiconductor surface layer.According to the invention, an epitaxial intermediate layer is present between the substrate region and the photosensitive layer and has a resistivity which lies between that of the photosensitive layer and that of the substrate region, while the surface layer, which is preferably partly etched away prior to the provision of the electrode, is grown epitaxially on the photosensitive layer.

Abstract: An electroluminescent semiconductor device having localized emission.The device comprises a p-n diode of which a region is covered with a dielectric layer which itself is covered partly by an electrode polarized with respect to the said region to establish an electric field zone influencing the injected carriers.Application to the localized control of the emission of an electroluminescent diode.

Abstract: A diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction and has a high resistivity, while the second region has a high impurity concentration that varies gradually and increases with increasing distance from the interface between the first and the second regions. The second region comprises two adjoining zones, the zone removed from the first region being more highly doped than the zone proximate said region.The method of manufacturing the above-described diode.

Abstract: A device having an electroluminescent diode of which the two regions have a homogeneous concentration of one type of doping centers.The doping centers of the opposite type have a concentration which decreases towards the emissive surface from the junction. Manufacture of the diode by out-diffusion.Application to devices having electroluminescent diodes with compounds III-V.

Abstract: A semiconductor device having a transistor, in particular a power transistor, of the planar type which comprises a distributed base-series resistor for safety against second breakdown. According to the invention the base resistor is formed in that a resistance-increasing region which is present beyond the emitter zone and substantially entirely surrounds the inner contact surface is present in the base zone between the contact surfaces of the emitter and base electrode layers surrounding each other along substantially the whole edge of the emitter-base junction.

Abstract: A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the first conductivity type and source and drain zones of the first conductivity type are provided in said second region. According to the invention, after the indiffusion, the doping material of the second region is outdiffused in an atmosphere of reduced pressure, preferably in a vacuum, in which a zone of maximum doping concentration is formed which may advantageously be used as a channel stopper and the source and drain zones are provided in the part of the second region having a doping concentration which increases from the surface. The method is preferably used for the manufacture of structures having complementary field effect transistors.

Abstract: A method for the successive epitaxial deposition on a semiconductor substrate of a first semiconductor layer and at least one further semiconductor layer, said layers differing mutually as to at least their conductivity properties and having been obtained by crystallization from a material in the liquid phase, comprising the steps of providing at least during the whole period of the growth of said first epitaxial layer at least one dopant in a container which is present inside said space at a part thereof removed from said thermal radiation and is independent of the said crucible, said container being connected to means present outside said space for the independent movement of said container, after the growth of the first epitaxial layer arranging said container above said crucible and turning it upside down to provide to said material at least once an extra addition of said at least one dopant, and forming said further layer with said at least one dopant.

Abstract: A signal detector including a transducer element, an X-Y addressed array of field-effect transistor electrically coupled, e.g., capacitively or directly coupled, to the transducer element, and means for addressing the transistor X-Y array.

Abstract: A specimen holder comprising a specimen space to be conditioned for an X-ray diffraction apparatus which is provided with a radiation window which is made of beryllium and which closes an opening in the holder over an arc of 180.degree. in a vacuumtight manner. To this end, the window is annealed to a temperature of approximately 600.degree.C. The specimen is provided on a removable support table, a support face of which contains the axis of curvature of the window.

Abstract: For coupling optical windows, in particular two fiberoptics windows, a diaphragm construction is used. This ensures a homogeneous pressure distribution over the window areas and prevents sliding or tilting movements of the windows. By reducing the weight of the components to be supported by the coupling to a minimum the elastic pressure to be exerted by the diaphragm construction can be restricted.

Abstract: Integrated circuit suitable for any desired supply polarity by means of a rectifier bridge two rectifiers of which are designed as current injectors.