Abstract: A semiconductor device including a semiconductor substrate, a device isolation region formed by filling a trench in the semiconductor substrate with dielectric material and defining device regions in the semiconductor substrate. The trench has a rounded upper edge, and a dummy thin layer formed on the rounded upper edge.

Abstract: A method for forming a metal pattern in a semiconductor device which is capable of reducing contact resistivity with an interconnection contact. The method includes forming a tungsten interconnection contact passing through a lower insulating layer on a semiconductor substrate, forming an upper insulating layer covering the interconnection contact, and forming a groove having the same line width as a damascene trench on the upper insulating layer. The method also includes forming a mask spacer on a sidewall of the groove, forming the damascene trench having an inclined bottom profile for exposing a top surface and a portion of a sidewall of the interconnection contact, and forming a metal pattern with which the damascene trench is filled, the metal pattern electrically connected to the interconnection contact.

Abstract: A wideband device modeling method comprises using ultra-short time-domain impulse responses measurement and using a subsequent extraction of said ultra-short time-domain impulse responses measurement. The wideband device modeling method in the invention is to provide a model that could faithfully describe an ultra-short TD response and would conform to the wideband consideration. An ultra-short impulse with tens of pico-second width has been used in this work for characterizing the TD responses of the devices. Moreover, the wideband device modeling method in the invention is to provide a layer peeling technique, widely used in characterizing PCB interconnection or package, is mixed with a conventional spiral inductor physical model. The wideband device modeling method in the invention also provides an extension equivalent circuit combined with the BSIM3v3 model.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract: The objective is to provide a surface protecting film for polycarbonate which is easy to laminate on polycarbonate and remove from the polycarbonate, the peel adhesive strength change to polycarbonate with times is small and there is no adhesive transferring to the backside of the film substrate in the case of storage for a long period or at a high temperature in the roll shape made of the long length tape. There provided a surface protecting film for polycarbonate, wherein a film substrate having Young's modulus of 1 GPa or more and an adhesive layer are comprised, the glass transition temperature (Tg) of the adhesive composing of the pressure sensitive adhesive layer being between 40 to 90° C. and the initial 180° peel adhesive strength to polycarbonate being between 10 to 300 mN/25 mm.

Abstract: A semiconductor memory device in which only global I/O buses, which receive one or more data groups that must be output first among a N number of data groups that are prefetched in a N-bit prefetch type, from an array of memory cells are precharged with a ½ power supply voltage, thereby making the output speed of the data groups that must be output first thing faster than that of the remaining data groups. The semiconductor memory device includes a data bus controller for precharging predetermined data buses that receive one or more data group that must be output to the outside first among a N number of data groups that are prefetched in a N-bit prefetch type from an array of memory cells, using information to decide an I/O sequence of the N number of the data groups.

Abstract: The present invention relates to a semiconductor memory device. When a device exits from power mode, after a time until an instruction/address receive control signal substantially turns on or off an address and instruction input buffer unit and a time until the address and instruction buffer unit is turned on to synchronize an external command signal to an internal clock signal are compensated for, an internal clock-generating control signal for controlling generation of the internal clock signal is sensed at a high phase of a buffered clock signal and is generated at a low phase of the buffered clock signal. Further, when a device enters power mode, an internal clock-generating control signal for controlling generation of an internal clock signal is sensed at a high phase of a buffered clock signal and is then generated at a low phase of the buffered clock signal.

Abstract: A method for fabricating a nonvolatile memory device including successively forming a first oxide layer, an electrically conductive layer, a second oxide layer, a nitride layer and a third oxide layer on a semiconductor substrate. The method also includes patterning the third oxide layer, forming spacers at sidewalls of the third oxide layer, forming a trench in the substrate by selectively etching the substrate with the third oxide layer as a mask, filling the trench with fourth oxide layer, and removing the third oxide layer, the nitride layer and the second oxide layer. Before filling the trench with the fourth oxide layer, a liner oxide layer is formed on inner walls of the trench. The fourth oxide layer is high density plasma (HDP) oxide and tetrafluoroethane (Si(OC2H5)4). During the filling the trench, lower corners of the conductive layer are made have rounded structure or bird's beak structure.

Abstract: A helicopter tactile accedence warning system includes a control stick and a tactile warning device attached to the control stick. A computer or micro processor and a keyboard for entering a safe temperature profile are also provided as well as a thermocouple for measuring the turbine output temperature. The computer compares the actual temperature versus the safe temperature profile and generates a signal to activate the tactile warning device when the actual temperature falls outside of the safe temperature profile to warn a pilot to abort the start. The tactile warning device is also activated during flight operations when an over stress condition occurs to thereby warn the pilot to take corrective action. In addition, the tactile warning may be activated at a first frequency as an early warning and then at a second frequency as an indication of imminent danger.

Abstract: An interference canceller is herein disclosed wherein a baseband signal is input to a detector's fingers, and the fingers detect multi-path signals and estimate the baseband signal's channel. An MRC uses the finger's despread signal and the channel estimate to output a soft bit decision value, while a signal regenerator uses a hard bit decision value and the finger's channel estimate to regenerate the baseband signal. An SIR measurer uses a soft bit decision value and a despreader's channel estimate to measure an SIR. A signal selector compares each detector's SIR measurement value with a target SIR, and when the SIR measurement value is greater than the target SIR, it selects the detector's regeneration signal to group received signals. A subtractor subtracts the regeneration signal from the baseband signal.

Abstract: A semiconductor wafer regenerating system is capable of easily and efficiently removing fabricating patterns formed on a semiconductor wafer to enable reuse of the semiconductor wafer. The system, which removes patterns of the semiconductor wafer in a dry manner by using blasting grit, includes a mesh conveyor, a grit blaster, a swinging element, a collecting element, a separating element, and a dust collector. The mesh conveyor transports the semiconductor wafer so that the patterns face upward. The grit blaster is installed above the mesh conveyor and has at least one blasting nozzle for blasting grits toward the semiconductor wafer to remove the patterns from the semiconductor wafer. The swinging element swings the blasting nozzle in a plane perpendicular to a transporting path of the semiconductor wafer along the mesh conveyor. The collecting element underneath the mesh conveyor collects pulverulent bodies including grits, chips, and dusts falling from the mesh conveyor.

Abstract: The present invention relates to a circuit for controlling a refresh oscillator, and more specifically, to a circuit for controlling a refresh oscillator, wherein refresh characteristics can be tested in a more efficient manner in such a manner that the refresh characteristics are tested at a refresh cycle, which is extended as long as a predetermined time from an originally set refresh cycle, in a user test mode so as to measure a refresh margin over a wide temperature range.

Abstract: The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics. The invention aims to propose an original arrangement for producing high-level and high-contrast collector currents simultaneously. The inventive spintronics transistor comprises a semiconductor emitter, a base fanning a spin valve and a metallic collector separated from the base by an insulating deposit. The emitter/base interface constitutes a Schottky barrier and the base/collector interface constitutes a tunnel-effect barrier.

Abstract: The field of the invention is that of devices for detecting non-metallic objects concealed on human subjects. These devices are more particularly dedicated to the surveillance and protection of reserved access areas, such as airport areas. The device according to the invention comprises a portable detector comprising a transmitter and a receiver of microwave frequency signals disposed in an enclosure of chaotic geometry including a plurality of measurement holes. The microwave frequency signal measured by this detector depends on the nature of the objects disposed under the holes. A processing device linked to this detector is used to correlate the measured signals with prerecorded signals. When the correlation exceeds a certain threshold corresponding to the presence of suspect objects, an alarm is generated.

Abstract: A wind turbine generator including a nacelle having reduced size and weight is provided. The wind turbine generator includes a nacelle disposed on a tower. The nacelle includes a main shaft that is connected to a rotor head equipped with blades and that integrally rotates with the rotor head, a gearbox that increases the rotational speed of the main shaft and that outputs the resulting rotational speed, and a generator driven by the output from the gearbox. In the wind turbine generator, a drivetrain extending from the main shaft to the generator via the gearbox is disposed in the rotor head.

Abstract: Any one of a Ti-containing water-soluble salt, metatitanic acid (TiO(OH)2) slurry and ultra fine titanium oxide powder, and a transition metal containing metal salt are dissolved in water to prepare a raw material mixture. The raw material is spray-dried to obtain precursor powder, which is calcined to form ultra fine Ti/transition metal complex oxide and is then mixed with nano-sized carbon particles and subjected to reduction and carburization in a non-oxidizing atmosphere.

Abstract: The invention relates to a method for determining the relative position of a mobile in relation to the known position of a reference station. The relative position calculation comprises the steps of: -a) choosing a linear combination of satellite transmission frequencies L1 and L2 from a predetermined list comprising at least two linear combinations of frequencies, -b) calculating a precise relative position Pp of the mobile in relation to the reference station on the basis of the linear combinations of pseudo-ranges corresponding to the linear combination and an estimated position Pe of the mobile in relation to the reference station, -c) choosing from the list the following linear combination, if it exists, and, in this case, reiterating step b), considering the estimated position to be said precise position Pp, -d) reiterating step c) for all the linear combinations in the list.

Abstract: A rotary hammerdrill bit for use with a percussion drilling device or a hammer drilling device, with a shank and a drill head attached to or configured on the shank, wherein a front side pointing in the advance direction of the drill head has a main cutting plate forming a main cutting axis. The main cutting plate extends over the diameter of the drill head and has a tip or tip-edge lying in the longitudinal axis of the drill bit and forms drill blades that are substantially roof-shaped and are inclined radially from the tip or tip-edge. The front side of the drill head has at least one pair of cutting pins, wherein the cutting pins are arranged on the drill head in essentially the same radial positions.