Abstract: A semiconductor laser device includes, in a disclosed embodiment: a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material; reflective facets at opposing edges of the active and confining regions; at least one of the confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, the layer of relatively high aluminum fraction material having, at its edges and adjacent the facets, spikes of native oxide of aluminum; and electrodes for applying electric potential across the upper and lower confining regions.

Abstract: An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Abstract: An apparatus for depositing a substance with temperature control includes, in one embodiment: a mandrel rotatable on an axis; a spacer mounted on the mandrel; a substance mounted on the spacer; a plasma, containing constituents of the substance being deposited, directed toward the substrate; the spacer having a thermal conductance in its thickness direction that varies with radial dimension.

Abstract: The disclosure involves the use of a library of modulated wavelet-packets which are effective in providing both precise frequency localization and space localization. An aspect of the disclosure involves feature extraction by determination of the correlations of a library of waveforms with the signal being processed, while maintaining, orthogonality of the set of waveforms selected (i.e. a selected advantageous basis). In a disclosed embodiment, a method is provided for encoding and decoding an input signal, comprising the following steps: applying combinations of dilations and translations of a wavelet to the input signal to obtain processed values; computing the information costs of the processed values; selecting, as encoded signals, an orthogonal group of processed values, the selection being dependent on the computed information costs; and decoding the encoded signals to obtain an output signal. The wavelet preferably has a plurality of vanishing moments.

Abstract: A radio communication system operates between two radio terminals, and/or between a radio terminal and a fixed terminal through a network. In the present disclosure, the switching of codec-release mode and codec mode in the network is controlled by using a specific control line which is installed in addition to a speech line. Thus, when a radio terminal communicates with another radio terminal through a network, no codec is used in the network, and so, speech distortion and signal delay are not deteriorated due to signal conversion by using a codec.

Abstract: A method for producing free-standing diamond film having a surface area of at least 1000 square millimeters includes the following steps: providing a substrate; depositing, on the substrate, by chemical vapor deposition, a first layer of diamond over a surface area of at least 1000 square millimeters, and to a first thickness, the first layer being deposited at a first deposition rate; depositing, on the first layer, a second layer of diamond, over a surface area of at least 1000 square millimeters, and to a second thickness, the second layer being deposited at a second deposition rate; and releasing the diamond from the substrate; the second deposition rate being as lest twice as high as the first deposition rate, and the first thickness being sufficiently thick to prevent the released diamond from bowing by more than a given distance.

Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.

Abstract: A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor.

Abstract: The substrate in a plasma jet deposition system is provided with structural attributes, such as apertures and/or grooves, that facilitate efficient deposition. Groups of substrates are arranged with respect to the plasma beam in a manner which also facilitates efficient deposition. In addition to increasing the portion of the plasma beam volume which contacts the substrate surface or surfaces, it is advantageous to provide for the efficient evacuation of spent fluids away from the substrate so that fresh plasma containing the operative species can easily and continuously contact the substrate surface.

Abstract: A multilayer hybrid circuit, which looks like a conventional printed circuit board, has a laminated body having at least one of a plurality of dielectric layers, magnetic layers, and conductive patterns, composing a capacitor, an inductor, and a resistor, and mounts a semiconductor chip. An external connection is effected by side terminals positioned on side walls of the laminated body. In one embodiment, said laminated body and said semiconductor chip are molded together by plastics so that the result looks as if a conventional semiconductor chip. In another embodiment, a resilient relay board is coupled with the laminated body when mounted on a mother board so that stress on the mother board is not applied directly to the laminated body.

Abstract: A thermal head for thermal recording or thermal transfer recording and a method of manufacturing the head. The head has a heat sink having an upper surface, a heating element substrate, disposed on the upper surface of the heat sink, having a projected convex portion on which an array of heating resistor elements are arranged, an electrical structure mounted on the same side as that of the upper surface of the heat sink and electrically connected to the heating resistor elements, and a protection structure for mechanically protecting the electrical structure. The substrate is constituted such that the height of the substrate from the surface of the heat sink is higher than the height of the protection structure, and the height of the projected convex portion is equal to or more than 0.6 mm.

Abstract: In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. Single-longitudinal-mode operation is exhibited over an extended range. In a further form of the disclosure, two linear arrays of end-coupled minicavities are arranged side by side to obtain a two dimensional array, with resultant lateral coupling between the linear arrays. The two dimensional array exhibits mode switching and multiple switching in the light power (L) versus current (I) characteristic (L-I) with increasing current. In another form of the disclosure, a stripe laser is transversely coupled (or side-coupled) with a linear array of end-coupled minicavities.

Abstract: A gas plasma generating system includes a resonant cavity for connection to a source of very high frequency power. A plasma cavity is defined by a wall of an electrically nonconductive material positioned within the resonant cavity for containing an ionizable gas such that in use a plasma is formed in the plasma cavity, the cavity having an exit opening to enable plasma to exit from the system. The plasma cavity comprises a tubular member extending through opposed walls of the resonant cavity, the tubular member receiving at one end a plasma gas, in use, and plasma exiting from the other end, and a movable tuning member whose position can be adjusted to achieve the desired tuning condition, the tubular member defining the plasma cavity extending through the tuning member.

Abstract: The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.

Abstract: A humidity meter has a housing (1) which has a separated sensor room (5) recessed in said housing (1) for securing a humidity sensor assembly (3). The humidity meter also has an electronic circuit (2) mounted on a printed circuit board (21) fixed in said housing (1), for processing humidity signal supplied by said humidity sensor assembly (3). Some examples of the process are analog-digital conversion of measured humidity signal, visible indication on a display screen, and/or interface with external circuit. Said humidity sensor assembly (3) is removably fixed on said printed circuit board (21) which doubles as a bottom wall (53) of said sensor room (5).

Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Abstract: Synthetic diamond film produced by chemical vapor deposition can be crushed to obtain diamond grit which has useful abrasive properties. The flexibility of CVD deposition processes in determining diamond film properties means that CVD diamond grit properties can be tailored to particular abrasive applications. In a disclosed embodiment, the grit particles are coated with a magnetic material. The coated grit particles can then be aligned with a magnetic field, and the coated grit particles are bonded to a matrix while aligned. In a further disclosed form of the invention, a chemical vapor deposition system, such as an arc jet plasma deposition system, is provided in a chamber.

Abstract: In a mobile communication system in which the service area is covered with a plurality of location registration areas each having a plurality of cells each relating to a specific base station, each location registration area has a plurality of groups so that the cells belonging to any group overlaps partly with the cells of other groups, but do not completely coincide with cells of other groups, and each mobile station belongs to one of said groups. When a mobile station moves beyond the border of location registration areas, the location updating for the mobile station is carried out at the cell in which the mobile station stays. In that case, as the mobile stations are classified into a plurality of groups, the traffic in each cell for location updating is dispersed to many cells, and the maximum traffic density for location updating per cell is reduced. So, the number of control channels in the system for location updating may be reduced.

Abstract: The disclosure is directed to a method for depositing a substance, such as synthetic diamond. A plasma beam is produced, and contains the constituents of the substance to be deposited. A substrate is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substance is deposited on the surface. The substrate, the beam, or both can be moved. Spinning of the substrate, with the beam non-concentric thereon, is one of the disclosed techniques.