Abstract: A bipolar semiconductor is manufactured by forming a plurality of grooves along the vertical (111) planes in a high resistivity epitaxial silicon layer which is disposed on an N+ (110) oriented substrate. Low resistivity epitaxial silicon of the same conductivity type is then used to fill in the grooves, thus forming alternate vertical regions of high and low resistivity. A base region is then diffused into said epitaxial layer and a plurality of emitters regions are diffused into said base region at locations directly above the low resistivity epitaxial regions.

Abstract: A method for adhering a passivation layer to gold regions in a semiconductor device. The method comprises the steps of providing a semiconductor device having at least one gold region formed thereon. A layer of a metal reactive with the gold is then deposited over the gold region so as to form a gold-reactive metal interface region. The gold and metal are then reacted at the interface region. Any metal which does not react is removed so as to expose a reacted interface region. Finally, a layer of passivation material is deposited over the exposed reacted interface region. Because the passivation material is then in contact with reacted gold regions, its adherence thereto is substantially increased.

Abstract: A golf swing teaching aid device comprising a vertical free standing screen with an open space in its lower, middle area is disclosed. The device is tall enough and wide enough to block the golfer's view of the flight of the golf ball, yet the open, center space allows the ball to pass through the device in its normal trajectory. The device may include a flap for adjusting the dimensions of the open, center space or for stopping the ball within the center space rather than allowing passage. The screen may be made of an impact absorbing and impressionable material such as vinyl coated nylon, which is temporarily marked when struck by a golf ball.

Abstract: A simplified method of fabricating V-groove junction field effect transistors using only two masking steps. The first masking step opens regions in an ohmic refractory metal layer deposited on a doped semiconductor wafer. V-grooves are anisotropically etched into the wafer through the openings, thereby defining source and drain regions and outer isolation V-grooves. The wafer is then coated with a passivating layer. The second masking step creates openings through the passivation layer to the source and drain regions, and electrical contacts to those regions are made. An ohmic contact to the back surface of the wafer forms the gate electrode. Multiple source and drain regions may be created between the outer isolation V-grooves and electrically parallel for a greater current rating.

Abstract: A circuit design suitable for use with monolithic semiconductor fabrication techniques which provides two accurate reference voltages, one of which is a certain calculatable percentage greater than, the other of which is the same percentage less than, a fixed reference voltage. The magnitude of this voltage window is set by selection of the value of a single resistor which is connected between a single connection point in the circuit and ground. The two accurate reference voltages are fully compensated for changes in temperature.

Abstract: An animal training and amusement device including a ball-throwing means and a food dispensing means. Both means can be activated by the animal alone without human intervention. The device also includes a food release means which is activated by the animal placing the retrieved ball on the top of the device. The device will reset in its original position without human intervention.

Abstract: A sealing assembly, designed primarily for both very low and high prssure sealing of a rod while either stationary or reciprocating, comprising a first sealing ring having a generally rectangular cross-sectional configuration and including a diagonally depending wiper arm and a second sealing ring having a generally L-shaped cross-sectional configuration. The arm of the rectangular sealing ring seals in the static mode and also serves to wipe fluid off the surface of the reciprocating rod in the dynamic mode. This wiper arm is provided with a sharp wiping edge which in cooperation with the L-shaped sealing ring maintains both a higher loading per unit area and a high rate of pressure rise at the contact with the rod for maximum leakage control at both low pressure and high pressure. The L-shaped sealing ring also restricts and controls the deformation of the wiper arm so as to maintain an optimum contact area between the wiper arm and rod surface thereby minimizing friction and wear therebetween.

Abstract: A butterfly valve disk plate having a plurality of fluid directing ribs extending from the disc perpendicular to the plane of the disk, the ribs on one side of the disk being located opposite the spaces between the ribs on the other side of the disk and the ribs on one half of one side of the disk being staggered with respect to the ribs on the other half of the same side of the disk.

Abstract: A coating composition useful for forming a high concentration phosphoro-silica spin-on dopant is disclosed. The coating composition is formed by the steps of heating a solution of mono-aluminum phosphate, adding a methyl alcohol to the hot solution so as to decrease the viscosity to a predetermined level, permitting the now diluted mono-aluminum phosphate solution to cool and mixing the cooled solution with an alcoholic solution of tetraethylorthosilicate. The present invention is also directed to semiconductor devices coated with the coating composition described hereinabove.

Abstract: This invention provides for a relay apparatus for use with optical fibers. A first set of optical fiber ends is mechanically secured in a suitably shaped retainer. A second set of optical fiber ends is secured in a second retainer appropriately shaped to move into one of a plurality of mechanically stable positions with respect to the first retainer when biased against the first retainer. These mechanically stable positions bring members of the first and second set of optical fibers into optical alignment. A switching mechanism is provided for moving the first retainer across the second retainer thereby making and breaking optical connections between the first and second set of optical fiber ends. In one embodiment, the retainers are cooperatively shaped by hemispheres, which define a set of mechanically stable alignment positions.

Abstract: A processor for audio program material which synthesizes simulated reflection and reverberation signals for use in creating the illusion of a specific modeled listening environment. A preferred embodiment of the processor accepts stereophonic audio signals and simulates the multiple reflections of an acoustically modeled environment by recirculating the signals through a pair of digital signal delays which have different delay times. The analog input signals are sampled and converted to digital form by first attenuating the signals with a digitally controlled step attenuator and then encoding the amplitude of the attenuated signal using a ramp comparison technique. The encoded amplitude signals, and a code representative of the attenuator position, are stored in a random access memory and are retrieved after the desired delay. The retrieved digital data are converted back to analog signals by reversing the encoding process, using the same ramp voltage generator.

Abstract: A process for forming a semiconductive device in which after a base region has been formed, a layer of polysilicon is deposited over the region. A protective covering, such as silicon nitride, is formed over areas of the polysilicon which overlay selected emitter sites and base contact sites. The protective covering prevents the replacing of the unprotected polysilicon with a dielectric such as silicon dioxide. The step of replacing the unprotected polysilicon is performed in one embodiment by a series of steps such as etching to remove the unprotected polysilicon and depositing silicon dioxide where the polysilicon was removed. In another embodiment, the unprotected polysilicon is first subjected to an electrolytic hydrofluoric solution, and then oxidized directly into silicon dioxide.If the polysilicon originally deposited was not doped with a conductivity-determining impurity, such an impurity may be ion-implanted into the remaining polysilicon.

Abstract: A sealing assembly, designed primarily for both very low and high pressure sealing of a rod while either stationary or reciprocating, comprising a first sealing ring having a generally Y-shaped cross-sectional configuration and a second sealing ring having a generally L-shaped cross-sectional configuration. One arm of the Y-shaped sealing ring seals in the static mode. The other arm seals in the static mode and also serves as a wiper arm wiping fluid off the surface of the reciprocating rod in the dynamic mode. This wiper arm is provided with a sharp wiping edge which in cooperation with the L-shaped sealing ring maintains both a higher loading per unit area and a high rate of pressure rise at the contact with the rod for maximum leakage control at both low pressure and high pressure. The L-shaped sealing ring also restricts and controls the deformation of the wiper arm so as to maintain an optimum contact area between the wiper and rod surface thereby minimizing friction and wear therebetween.

Abstract: Flat and parallel depositions of low pressure chemical vapor deposited (LPCVD) polycrystalline intrinsic silicon are formed on both sides of a wafer of P-I-N <100> substrate of silicon to support the wafer during subsequent polish removal from the top surface. This structurally reinforces the crystal wafer and helps prevent warpage and cracking during subsequent handling.

Abstract: A module for mounting electrical contacts comprises a base formed of resilient synthetic plastics material having means for mounting an electrical contact and a male and female coupling element disposed so that two modules can be connected to one another in end-to-end relation by means of the coupling element. The male and female coupling elements include an interlocking formation for retaining the male coupling element within the female coupling element. By means of the interlocking formation a series of modules can be firmly connected so that, in use, relative movement between interconnected modules is avoided.

Abstract: An improved method for the attachment of lead electrodes to metallized film capacitors is disclosed herein. Capacitors of this type are formed by winding thermoplastic dielectric films, each having a conductive coating, into a coil and applying conductive electrodes to the opposite axial ends of the coil, forming an electrical bond with the metallized surfaces of the dielectric windings. The invented method provides for a two part heat curing of the capacitor. After the capacitor is wound into a coil, it is clamped and then heated at a moderate temperature below its rated operating temperature for a sufficient period of time so as to impart mechanical stability to the device. A "schooping" material is then sprayed on the axial ends of the capacitor, allowing for the deep penetration of the material between offset layers of the capacitor.

Abstract: An apparatus for creating an electrical connection to a battery having protruding terminals from one side of it. A surface is provided against which the side of the battery containing its terminals is biased via an appropriate hook shaped retainer. The protruding terminals of the battery are inserted into holes in the surface, and protrude from the opposite side of the surface. When protruding from the opposite side of the surface, they come into electrical and mechanical contact with suitable connectors, thereby forming the desired connection, and allow use of the battery in an electrical circuit as a power supply. The battery may be easily removed by a suitable repositioning of the retainer.

Abstract: A circuit for testing semiconductor devices, such as diodes, which alternately applies a forward current and a reverse bias voltage. The devices are series connected during the forward current portion of the cycle by means of silicon controlled rectifiers and parallel connected for the reverse bias portion of the cycle.