Abstract: A vehicle includes a sensor sensing external temperature, a 2WD/4WD switch operated to input an instruction to switch a two-wheel drive state and a four-wheel drive state, a transfer switching mechanical power transfer for the two-wheel drive state and that for the four-wheel drive state, an actuator actuating the transfer, and an ECU controlling the actuator. The ECU determines from a value detected by the sensor a current supplied to the actuator. Preferably, the transfer includes a synchronizer mechanism driven by power generated by the actuator to transfer a drive shaft's rotation to a driven shaft and engage the shafts together when they achieve synchronous rotation.
Abstract: The voltage generation circuit is disclosed that has a standard voltage generation circuit, a minimum voltage setting circuit, a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of the resistive elements, a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit, another input terminal connected to the minimum voltage setting circuit and the voltage setting circuit having resistive elements and gate transistors connected to the resistive elements, and the output node showing the result of the difference voltage of these inputs, a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.
Abstract: A lithium-titanium composite oxide includes a crystallite diameter not larger than 6.9×102 ?, and includes a rutile type TiO2, an anatase type TiO2, Li2TiO3 and a lithium titanate having a spinel structure. The rutile type TiO2, the anatase type TiO2 and Li2TiO3 each has a main peak intensity not larger than 7 on the basis that a main peak intensity of the lithium titanate as determined by the X-ray diffractometry is set at 100.
Abstract: A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing process comprising carbon dioxide (CO2) and optionally a passivation gas, such as a hydrocarbon gas, i.e., CxHy, wherein x, y represent integers greater than or equal to unity, is used to remove residue while reducing damage to underlying dielectric layers. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn).
Abstract: A high-capacity enclosed nickel-zinc primary battery excellent in characteristics such as capacity maintenance factor, energy density, and high-efficient discharge characteristics, an anode using it, and a production method for them. An enclosed nickel-zinc primary battery which uses as an anode an anode active material of nickel hydroxide compound, such as nickel oxyhydroxide, particles and uses zinc alloy gel as a cathode material, wherein a ratio of anode theoretical capacity to cathode theoretical capacity is 1.0-1.6, and a ratio of alkali electrolyte to anode theoretical capacity is 1.0-1.6 ml/Ah.
Abstract: A process for improving the durability, dimensional stability and surface hardness of a wood body is described, in which an untreated wood body is impregnated with an aqueous solution of A) an impregnating agent from the group consisting of 1,3-bis(hydroxymethyl)-4,5-dihydroxyimidazolidin-2-one, 1,3-bis(hydroxymethyl)-4,5-dihydroxyimidazolidin-2-one modified with a C1-5-alcohol, a polyol or mixtures thereof, 1,3-dimethyl-4,5-dihydroxyimidazolidin-2-one, dimethylolurea, bis(methoxymethyl)urea, tetramethylolacetylenediurea, 1,3-bis(hydroxymethyl)imidazolidin-2-one, methylolmethylurea or mixtures thereof and B) a catalyst from the group consisting of metal or ammonium salts, organic or inorganic acids and mixtures thereof, and wood and impregnating agent are then caused to react while maintaining humid conditions at elevated temperature.
Abstract: A signal processing unit subjects to signal processing first image signals, obtained as the output from a three-sensor-system sensor unit which uses CMOS sensors or the like, thereby obtaining high-image-quality second image signals. The three sensors are positioned at placement positions which are suitable for signal processing at the signal processing unit. The suitable placement positions have been obtained by learning performed beforehand. In one arrangement, the signal processing unit evaluates the second image signals, and controls the placement positions of the three sensors according to the evaluation results. In another arrangement, the first signals are evaluated in a predetermined region, and the capabilities of the sensors at the predetermined region are changed according to the evaluation results. In another arrangement, the sensor unit is controlled according to the level distribution of the first image signals. The present invention can be applied to still or video digital cameras.
Abstract: A power amplifier including an active device having at least one heterjunction bipolar transistor based on a compound semiconductor; a diode connected between the base and the emitter of the bipolar transistor in reverse direction with respect to the base-emitter diode; a resistor connected in series between one electrode of the diode and the base of the bipolar transistor; and a bias circuit connected between the diode and the resistor, wherein the bipolar transistor includes a plurality of transistors, and each transistor is connected to the bias circuit via a resistor connected to a base of the transistor. The bias circuit may include an emitter follower circuit having a bipolar transistor.
Abstract: The present invention is to provide an electrolyte membrane for fuel cell of low fuel permeability and high proton conductivity and to provide a fuel cell comprising the electrolyte membrane. According to the present invention, a polymer membrane including repeating unit of five-membered heterocyclic rings is used as an electrolyte membrane of the fuel cell. The electrolyte membrane has high proton conductivity with free from moves of the fuel or water when the proton conducts in the electrolyte membrane.
Abstract: One package contains a plurality of memory chips. Each memory chip has an I/O terminal which generates a busy signal. The busy signal enables a busy state when a power supply voltage value reaches a specified and guaranteed range after a power-on sequence. The busy signal maintains the busy state until completion of initialization operations for the plurality of memory chips. The busy signal releases the busy state after completion of all initialization operations for the plurality of memory chips.
October 2, 2007
Date of Patent:
September 29, 2009
Kabushiki Kaisha Toshiba
Hiroshi Nakamura, Kenichi Imamiya, Ken Takeuchi
Abstract: A data processing apparatus and method, where the apparatus includes a region selecting unit configured to select a region corresponding to a pixel of interest, a frequency detector configured to detect a frequency corresponding to pixels belonging to the region, a continuity detector configured to detect data continuity of the image data, and a real world estimating unit configured to estimate the light signals by estimating the continuity of the real world light signals which have been lost.
Abstract: The present invention includes a method of verifying a Site-Dependent (S-D) processing procedure, the method including receiving a plurality of wafers by a S-D transfer system, determining S-D wafer state data for each wafer; establishing a first set of verification wafers, determining a number of required verification sites for each verification wafer, determining a number of visited verification sites, determining a number of remaining verification sites for each verification wafer, establishing a first procedure-verification sequence, determining a first S-D verification procedure, transferring the first verification wafer to a first S-D processing element and delaying the first verification wafer for a first period of time.
Abstract: A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.
Abstract: A semiconductor laser module includes a distributed-feedback laser. When a predetermined transmission loss, a predetermined number of channels, and a predetermined modulation factor per channel are given, a cavity length of the distributed-feedback laser satisfies a condition that a distortion is less than a predetermined distortion level and a carrier-to-noise ratio is more than a predetermined value based on a relation between transmission loss, number of channels, modulation factor per channel, and the cavity length of the distributed-feedback laser.
Abstract: A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer being in contact with the first gate insulating layer made from a silicon nitride film, a silicon oxynitride film, or an alumina film; a second insulating layer thicker than the first gate insulting layer; a second charge-storage layer being in contact with the second insulating layer; a third insulating layer thicker than the first gate insulating layer being in contact with the second charge-storage layer; and a control electrode upon the third insulating layer.
Abstract: A host device exchanging information with a memory card, the host device including: a charge management module configured to receive payment of a charge corresponding to an increased amount of a usable area if a capacity of the usable area of the memory card for saving user data is increased, and pay out a charge corresponding to the reduced amount of the usable area if the capacity of the usable area is reduced; and a transmission module configured to transmit an area changing command to instruct an increase or a reduction of the usable area in accordance with the charge to the memory card.
Abstract: A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a non-volatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method including: performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell; performing a second data write operation for writing data into the second memory cell; and performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.
Abstract: In the pixel portions of the CMOS image sensor, a plurality of unit cells are arranged in the row and column directions at a predetermined pitch respectively in a two-dimensional plain forming a matrix. Each unit cell includes the first and second photodiodes PDa and PDb, the first and second transfer transistors Ta and Tb for transferring the stored charges of the photodiodes to their common floating junctions FJ, the reset transistors R for resetting the potential of the floating junctions FJ, the driver transistors D whose output potential is controlled by the potential of the floating junctions FJ, and the address transistors A for selectively driving the driver transistors D. With the arrangement of the elements and wires in the pixel portions, the integration can be increased and the resolution in the horizontal and vertical directions can be improved.
Abstract: A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.