Abstract: A high-capacity enclosed nickel-zinc primary battery excellent in characteristics such as capacity maintenance factor, energy density, and high-efficient discharge characteristics, an anode using it, and a production method for them. An enclosed nickel-zinc primary battery which uses as an anode an anode active material of nickel hydroxide compound, such as nickel oxyhydroxide, particles and uses zinc alloy gel as a cathode material, wherein a ratio of anode theoretical capacity to cathode theoretical capacity is 1.0-1.6, and a ratio of alkali electrolyte to anode theoretical capacity is 1.0-1.6 ml/Ah.
Abstract: A lithium-titanium composite oxide includes a crystallite diameter not larger than 6.9×102 ?, and includes a rutile type TiO2, an anatase type TiO2, Li2TiO3 and a lithium titanate having a spinel structure. The rutile type TiO2, the anatase type TiO2 and Li2TiO3 each has a main peak intensity not larger than 7 on the basis that a main peak intensity of the lithium titanate as determined by the X-ray diffractometry is set at 100.
Abstract: A solder resist comprising a thermosetting resin is printed on a surface of an insulating board (7) having a conductor circuit (6). The solder resist is then heat-cured to form an insulating film (1) having a low thermal expansion coefficient. A laser beam (2) is then applied to the portion of the insulating film in which an opening is to be formed, to burn off the same portion for forming an opening (10), whereby the conductor circuit (6) is exposed. This opening may be formed as a hole for conduction by forming a metal plating film on an inner surface thereof. It is preferable that an external connecting pad be formed so as to cover the opening. The film of coating of a metal is formed by using an electric plating lead, which is preferably cut off by a laser beam after the electric plating has finished.
Abstract: The voltage generation circuit is disclosed that has a standard voltage generation circuit, a minimum voltage setting circuit, a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of the resistive elements, a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit, another input terminal connected to the minimum voltage setting circuit and the voltage setting circuit having resistive elements and gate transistors connected to the resistive elements, and the output node showing the result of the difference voltage of these inputs, a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.
Abstract: A process for improving the durability, dimensional stability and surface hardness of a wood body is described, in which an untreated wood body is impregnated with an aqueous solution of A) an impregnating agent from the group consisting of 1,3-bis(hydroxymethyl)-4,5-dihydroxyimidazolidin-2-one, 1,3-bis(hydroxymethyl)-4,5-dihydroxyimidazolidin-2-one modified with a C1-5-alcohol, a polyol or mixtures thereof, 1,3-dimethyl-4,5-dihydroxyimidazolidin-2-one, dimethylolurea, bis(methoxymethyl)urea, tetramethylolacetylenediurea, 1,3-bis(hydroxymethyl)imidazolidin-2-one, methylolmethylurea or mixtures thereof and B) a catalyst from the group consisting of metal or ammonium salts, organic or inorganic acids and mixtures thereof, and wood and impregnating agent are then caused to react while maintaining humid conditions at elevated temperature.
Abstract: A drive circuit has a level shift circuit which outputs level-shifted on and off signals each for controlling a power semiconductor element in an on or off state, a first RS flip flop which is supplied with the on signal through a setting input terminal and supplied with the off signal through a resetting input terminal, and which outputs a drive signal to the power semiconductor element, and a logic filter circuit which is provided between the level shift circuit and the first RS flip flop, and which blocks transmission of the on and off signals during the time period from a time at which both the on and off signals become a first logic to a time at which both the on and off signal become a second logic.
Abstract: A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing process comprising carbon dioxide (CO2) and optionally a passivation gas, such as a hydrocarbon gas, i.e., CxHy, wherein x, y represent integers greater than or equal to unity, is used to remove residue while reducing damage to underlying dielectric layers. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn).
Abstract: A signal processing unit subjects to signal processing first image signals, obtained as the output from a three-sensor-system sensor unit which uses CMOS sensors or the like, thereby obtaining high-image-quality second image signals. The three sensors are positioned at placement positions which are suitable for signal processing at the signal processing unit. The suitable placement positions have been obtained by learning performed beforehand. In one arrangement, the signal processing unit evaluates the second image signals, and controls the placement positions of the three sensors according to the evaluation results. In another arrangement, the first signals are evaluated in a predetermined region, and the capabilities of the sensors at the predetermined region are changed according to the evaluation results. In another arrangement, the sensor unit is controlled according to the level distribution of the first image signals. The present invention can be applied to still or video digital cameras.
Abstract: A power amplifier including an active device having at least one heterjunction bipolar transistor based on a compound semiconductor; a diode connected between the base and the emitter of the bipolar transistor in reverse direction with respect to the base-emitter diode; a resistor connected in series between one electrode of the diode and the base of the bipolar transistor; and a bias circuit connected between the diode and the resistor, wherein the bipolar transistor includes a plurality of transistors, and each transistor is connected to the bias circuit via a resistor connected to a base of the transistor. The bias circuit may include an emitter follower circuit having a bipolar transistor.
Abstract: A vehicle includes a sensor sensing external temperature, a 2WD/4WD switch operated to input an instruction to switch a two-wheel drive state and a four-wheel drive state, a transfer switching mechanical power transfer for the two-wheel drive state and that for the four-wheel drive state, an actuator actuating the transfer, and an ECU controlling the actuator. The ECU determines from a value detected by the sensor a current supplied to the actuator. Preferably, the transfer includes a synchronizer mechanism driven by power generated by the actuator to transfer a drive shaft's rotation to a driven shaft and engage the shafts together when they achieve synchronous rotation.
Abstract: A data processing apparatus and method, where the apparatus includes a region selecting unit configured to select a region corresponding to a pixel of interest, a frequency detector configured to detect a frequency corresponding to pixels belonging to the region, a continuity detector configured to detect data continuity of the image data, and a real world estimating unit configured to estimate the light signals by estimating the continuity of the real world light signals which have been lost.
Abstract: Second digital information serving as copyright protection information can be stably and reliably read without any effect of a defect or pit missing on a disk-shaped recording medium. Second digital information is recorded onto a disk-shaped recording medium by wobbling a pit sequence recorded as a first signal. The second digital information is recorded so that a plurality of bits constituting the second digital information are allocated in a unit period of an identical sync signal contained in the first signal. During playback, the plurality of bits constituting the recorded second digital information are read a plurality of times every unit period of the sync signal, and information of the read bits is then integrated. Thus, information from a large number of wobbled pits across unit periods of a plurality of sync signals can be integrated to determine the bit values.
Abstract: One package contains a plurality of memory chips. Each memory chip has an I/O terminal which generates a busy signal. The busy signal enables a busy state when a power supply voltage value reaches a specified and guaranteed range after a power-on sequence. The busy signal maintains the busy state until completion of initialization operations for the plurality of memory chips. The busy signal releases the busy state after completion of all initialization operations for the plurality of memory chips.
October 2, 2007
Date of Patent:
September 29, 2009
Kabushiki Kaisha Toshiba
Hiroshi Nakamura, Kenichi Imamiya, Ken Takeuchi
Abstract: An image forming apparatus includes a toner image forming mechanism that forms a toner image on a recording medium and a fixing mechanism that fixes the toner image on the recording medium. The fixing mechanism includes a fixing apparatus. The fixing apparatus includes: an elastic roller having a stiffness greater than or equal to 28 Hs and less than or equal to 34 Hs on an Asker C scale and including a sponge-like elastic layer having a density greater than or equal to 0.38 g/cm3; a high-stiffness roller having a stiffness greater than the stiffness of the elastic roller and forms a fixing nip between the elastic roller and the high-stiffness roller; and a heating mechanism that heats the fixing nip.
Abstract: A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.
Abstract: A semiconductor laser module includes a distributed-feedback laser. When a predetermined transmission loss, a predetermined number of channels, and a predetermined modulation factor per channel are given, a cavity length of the distributed-feedback laser satisfies a condition that a distortion is less than a predetermined distortion level and a carrier-to-noise ratio is more than a predetermined value based on a relation between transmission loss, number of channels, modulation factor per channel, and the cavity length of the distributed-feedback laser.
Abstract: In an actuator, a first piston is attached to a first toothed rack, and a second piston is attached to a second toothed rack. A rotary member is attached to one pinion mating with the first or second toothed racks. A first volume is disposed in the cavity on one side of the first piston. A second volume is disposed in the cavity on another side of the first piston. A third volume is disposed on a side of the second piston opposite the second volume. A first fluid port is in fluid communication with the first volume via a primary fluid passage. A second fluid port, which is external to the cavity, is in fluid communication with the second volume. A fluid passage in the housing, external to the cavity and separate from the primary fluid passage connects the first and third volumes independently of the primary fluid passage.
Abstract: A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer being in contact with the first gate insulating layer made from a silicon nitride film, a silicon oxynitride film, or an alumina film; a second insulating layer thicker than the first gate insulting layer; a second charge-storage layer being in contact with the second insulating layer; a third insulating layer thicker than the first gate insulating layer being in contact with the second charge-storage layer; and a control electrode upon the third insulating layer.
Abstract: A semiconductor memory device includes a memory cell array including memory cells, word lines which select the memory cells, bit lines which transfer data of the memory cells, a sense amplifier circuit which amplifies data transferred to the bit lines, a first dummy cell group including first dummy cells, a dummy word line which selects the first dummy cell group, a dummy bit line to which data of the first dummy cell group is transferred, a generation circuit which generates an activation signal to activate the sense amplifier circuit based on a variation in a potential level of the dummy bit line, and a potential generating circuit which generates a first source potential applied to the first dummy cell group. The first source potential is different from a power supply potential.