Abstract: A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
Abstract: One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip having a final metal layer; a dielectric layer disposed over the final metal layer; and a conductive layer deposed over the dielectric layer, the dielectric layer being between the final metal layer and the conductive layer.
Type:
Grant
Filed:
September 18, 2007
Date of Patent:
August 17, 2010
Assignee:
Infineon Technologies AG
Inventors:
Helmut Tews, Hans-Gerd Jetten, Alexander von Glasow, Hans-Joachim Barth
Abstract: A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer. The base layer may be a SiGe base layer.
Abstract: A device utilizing a breakdown layer in combination with a programmable resistance material, a phase-change material or a threshold switching material. The breakdown layer having damage.
Abstract: A fuel cell. The anode of the fuel cell comprises a hydrogen oxidation catalyst comprising a finely divided metal particulate. The metal particulate may be a nickel and/or nickel alloy particulate having a particle size less than about 100 Angstroms.
Type:
Grant
Filed:
January 10, 2005
Date of Patent:
November 7, 2006
Assignee:
Ovonic Battery Company, Inc.
Inventors:
Michael A. Fetcenko, Stanford R. Ovshinsky, Kwo Young
Abstract: A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
Type:
Grant
Filed:
May 21, 2003
Date of Patent:
October 31, 2006
Assignee:
Ovonyx, Inc.
Inventors:
Jeffrey P. Fournier, Sergey A. Kostylev
Abstract: A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the conductive layer may be cup-shaped. In one embodiment, the memory element may include a chalcogenide material.
Type:
Grant
Filed:
September 8, 2005
Date of Patent:
August 15, 2006
Assignee:
Ovonyx, Inc.
Inventors:
Tyler Lowrey, Stephen J. Hudgens, Patrick Klersy
Abstract: A method of making a catalyst. The method comprises the step of leaching alloy particles. Preferably, the alloy particles are hydrogen storage alloy particles.
Type:
Grant
Filed:
January 10, 2005
Date of Patent:
May 16, 2006
Assignee:
Ovonic Battery Company, Inc.
Inventors:
Michael A. Fetcenko, Stanford R. Ovshinsky, Kwo Young
Abstract: A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
Type:
Grant
Filed:
March 24, 2003
Date of Patent:
May 16, 2006
Assignees:
BAE Systems Information and Ovonyx, Inc, Electronic Systems Integration Inc.
Abstract: An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
Type:
Grant
Filed:
May 19, 2004
Date of Patent:
April 4, 2006
Assignee:
Ovonyx, Inc.
Inventors:
Sergey A. Kostylev, Stanford R. Ovshinsky, Wolodymyr Czubatyi, Patrick Klersy, Boil Pashmakov
Abstract: A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
Abstract: An integrated circuit chip, comprising: an electronic device; and a phase-change memory storing information of said electronic device. A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on said chip; storing information about said electronic circuit in said phase-change memory.
Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
Abstract: The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
Type:
Grant
Filed:
September 5, 2003
Date of Patent:
November 29, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Steve Hudgens, John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken
Abstract: A rechargeable multi-cell battery including a plurality of electrochemical cells. Each of the cells includes a gas port that allows passage of cell gases into and out of the cell but prevent passage of cell electrolyte out of the cell. The gas port may be a gas permeable membrane. The multi-cell batter may be a bipolar battery.
Type:
Grant
Filed:
November 6, 2000
Date of Patent:
November 29, 2005
Assignee:
Texaco Ovonic Battery Systems, LLC
Inventors:
Lin R. Higley, Marshall D. Muller, Dennis A. Corrigan
Abstract: A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
Type:
Grant
Filed:
March 25, 1999
Date of Patent:
November 29, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
Abstract: An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.
Type:
Grant
Filed:
March 20, 2001
Date of Patent:
September 13, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Tyler Lowrey, Stephen J. Hudgens, Patrick Klersy
Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
Type:
Grant
Filed:
March 16, 2004
Date of Patent:
August 9, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Tyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
Abstract: A method of operating a electrically programmable phase-change memory element. The method includes the step of applying an electrical signal to memory element which is sufficient to return the memory element to its pre-drift resistance state.
Type:
Grant
Filed:
May 13, 2003
Date of Patent:
July 5, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Sergey A. Kostylev, Wolodymyr Czubatyj, Tyler Lowrey
Abstract: A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.
Type:
Grant
Filed:
August 8, 2002
Date of Patent:
March 29, 2005
Assignee:
Ovonyx, Inc.
Inventors:
Sergey A. Kostylev, Wolodymyr Czubatyj, Patrick Klersy