Patents Represented by Attorney Philip H. Schlazer
  • Patent number: 8039904
    Abstract: A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: October 18, 2011
    Assignee: Infineon Technologies AG
    Inventors: Ronald Kakoschke, Klaus Schruefer
  • Patent number: 7777300
    Abstract: One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip having a final metal layer; a dielectric layer disposed over the final metal layer; and a conductive layer deposed over the dielectric layer, the dielectric layer being between the final metal layer and the conductive layer.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: August 17, 2010
    Assignee: Infineon Technologies AG
    Inventors: Helmut Tews, Hans-Gerd Jetten, Alexander von Glasow, Hans-Joachim Barth
  • Patent number: 7598539
    Abstract: A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer. The base layer may be a SiGe base layer.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: October 6, 2009
    Assignee: Infineon Technologies AG
    Inventor: Detlef Wilhelm
  • Patent number: 7582546
    Abstract: A device utilizing a breakdown layer in combination with a programmable resistance material, a phase-change material or a threshold switching material. The breakdown layer having damage.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: September 1, 2009
    Assignee: Infineon Technologies AG
    Inventors: Ronald Kakoschke, Thomas Nirschl
  • Patent number: 7132193
    Abstract: A fuel cell. The anode of the fuel cell comprises a hydrogen oxidation catalyst comprising a finely divided metal particulate. The metal particulate may be a nickel and/or nickel alloy particulate having a particle size less than about 100 Angstroms.
    Type: Grant
    Filed: January 10, 2005
    Date of Patent: November 7, 2006
    Assignee: Ovonic Battery Company, Inc.
    Inventors: Michael A. Fetcenko, Stanford R. Ovshinsky, Kwo Young
  • Patent number: 7129531
    Abstract: A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: October 31, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Jeffrey P. Fournier, Sergey A. Kostylev
  • Patent number: 7092286
    Abstract: A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the conductive layer may be cup-shaped. In one embodiment, the memory element may include a chalcogenide material.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: August 15, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick Klersy
  • Patent number: 7045383
    Abstract: A method for making a tapered opening. The defined tapered opening is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: May 16, 2006
    Assignees: BAE Systems Information and Ovonyx, Inc, Electronic Systems Integration Inc.
    Inventors: Jon Maimon, John Rodgers
  • Patent number: 7045484
    Abstract: A method of making a catalyst. The method comprises the step of leaching alloy particles. Preferably, the alloy particles are hydrogen storage alloy particles.
    Type: Grant
    Filed: January 10, 2005
    Date of Patent: May 16, 2006
    Assignee: Ovonic Battery Company, Inc.
    Inventors: Michael A. Fetcenko, Stanford R. Ovshinsky, Kwo Young
  • Patent number: 7023009
    Abstract: An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: April 4, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Sergey A. Kostylev, Stanford R. Ovshinsky, Wolodymyr Czubatyi, Patrick Klersy, Boil Pashmakov
  • Patent number: 6992369
    Abstract: A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
    Type: Grant
    Filed: October 8, 2003
    Date of Patent: January 31, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Sergey A. Kostylev, Wolodymyr Czubatyj
  • Patent number: 6987688
    Abstract: An integrated circuit chip, comprising: an electronic device; and a phase-change memory storing information of said electronic device. A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on said chip; storing information about said electronic circuit in said phase-change memory.
    Type: Grant
    Filed: June 11, 2003
    Date of Patent: January 17, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Guy C. Wicker
  • Patent number: 6972428
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Grant
    Filed: August 9, 2004
    Date of Patent: December 6, 2005
    Assignee: Ovonyx, Inc.
    Inventor: Jon Maimon
  • Patent number: 6969869
    Abstract: The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
    Type: Grant
    Filed: September 5, 2003
    Date of Patent: November 29, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Steve Hudgens, John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken
  • Patent number: 6969567
    Abstract: A rechargeable multi-cell battery including a plurality of electrochemical cells. Each of the cells includes a gas port that allows passage of cell gases into and out of the cell but prevent passage of cell electrolyte out of the cell. The gas port may be a gas permeable membrane. The multi-cell batter may be a bipolar battery.
    Type: Grant
    Filed: November 6, 2000
    Date of Patent: November 29, 2005
    Assignee: Texaco Ovonic Battery Systems, LLC
    Inventors: Lin R. Higley, Marshall D. Muller, Dennis A. Corrigan
  • Patent number: 6969866
    Abstract: A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
    Type: Grant
    Filed: March 25, 1999
    Date of Patent: November 29, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
  • Patent number: 6943365
    Abstract: An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.
    Type: Grant
    Filed: March 20, 2001
    Date of Patent: September 13, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick Klersy
  • Patent number: 6927093
    Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: August 9, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Patrick Klersy, Stephen J. Hudgens, Jon Maimon
  • Patent number: 6914801
    Abstract: A method of operating a electrically programmable phase-change memory element. The method includes the step of applying an electrical signal to memory element which is sufficient to return the memory element to its pre-drift resistance state.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: July 5, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Sergey A. Kostylev, Wolodymyr Czubatyj, Tyler Lowrey
  • Patent number: 6872963
    Abstract: A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.
    Type: Grant
    Filed: August 8, 2002
    Date of Patent: March 29, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Sergey A. Kostylev, Wolodymyr Czubatyj, Patrick Klersy