Patents Represented by Attorney Pichard L. Donaldson

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  • Method for forming an integrated circuit resistor comprising amorphous silicon
    Patent number: 5877059
    Abstract: The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first electrical contact is made to the resistor on its bottom surface and a second electrical contact is made to the resistor on its top surface.Other devices, systems and methods are also disclosed.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: March 2, 1999
    Assignee: Texas Instruments Incorporated
    Inventor: Mark G. Harward