Abstract: A method of acquiring and processing a satellite observation image of the earth by means of at least one strip or a matrix of detectors of the charge transfer type travelling over an observed zone, in which a plurality of pixels are acquired, which pixels are sampled in a staggered configuration, the method being characterized in that the line pitch and the column pitch of said staggered sampling are such that the image spectrum is situated mainly in a zone of the Fourier plane where the modulation transfer function is meaningful and where spectrum aliasing is limited.

Abstract: A device for compressing information sensed from a model of a product is provided. The compressed quantity of information is a subset of the control information that can be transferred, by way of a data link, to machining equipment used to make the product from a blank. The device senses the model in a first coordinate system and converts the sensed first coordinates into corresponding second coordinates, describing the shape in a second coordinate system. These second coordinates form the basis for the control information. Compressing the information substantially reduces the amount of data transmitted over a public telecommunication network of the data link.

Abstract: Upon receiving a message {ID′i−1, X′i−1, m′i−1, Yi−1} from a signer (i−1), a signer i generates a random number ri, then calculates Xi=gri mod p using pieces of public information p, q and g, then sets X′i=(X′i−1, Xi), m′i=(m′i−1, mi), then calculates ei=fi(X′i, m′i), di=hi(X′i, m′i) with public one-way functions fi and hi, calculates yi=(yi−1+diri+eisi) mod q using a secret random number si, sets ID′i=(ID′i−1, IDi), and sends information {ID′i,X′i,m′i,y′i} to the next signer (i+1). A verifier calculates ei and di with the one-way functions fi and hi using X′L and m′L contained in received information {ID′L, X′L, m′L, yL}, and makes a check to see if gyL≡X1d1 ILe1 . . .

Abstract: A semiconductor device has a semiconductor substrate and a conductive layer formed above the semiconductor substrate. The conductive layer has a silicon film, a silicide film formed on the silicon film, and a high melting-point metal film formed on the silicide film. The silicon film has a non-doped layer, which does not contain impurities, and an impurity layer which is formed on the non-doped layer and contains impurities. The silicide film is formed on the impurity layer of the silicon film.

Abstract: An equipment for calibration of an industrial robot which has a plurality of axes of rotation and wherein, the equipment comprises a measuring device is adapted for rotatable connection to a reference point the position of which is known, is adapted to be in contact with the robot, or a tool carried by the robot, during the calibration process, and has an axis of rotation which intersects the reference point when the measuring device is connected to the reference point. The measuring device further comprises a gravity sensor which is so mounted so that the axis of the gravity sensor is substantially parallel to the axis of rotation of the measuring device, whereby the gravity sensor measures the angle between the gravity vector and axis of rotation.

Abstract: An apparatus (10) for altering the magnetic state of a permanent magnet comprises a coil inductor (26) for generating and applying an induced magnetic field to the permanent magnet. The coil inductor (26) is provided in circuit between two charge storage elements (20, 24). The apparatus also comprises a discharge control circuit (28) for transferring charge alternately in opposed directions between the storage elements (20, 24) though the coil inductor (26) to generate a series of alternating polarity magnetic field pulses (167, 191) of decreasing magnitude in the coil inductor (26) or to generate a single magnetic pulse of relatively high strength. The apparatus (10) can be operated as either a magnetising or demagnetising device and is capable of demagnetising a column of 200 or more magnets.

Abstract: A method for forming a semiconductor device. A substrate is provided. A first electrically insulating layer is formed on the substrate. A second electrically insulating layer is formed on the first electrically insulating layer. Openings are formed through the second electrically insulating layer down to the level of the first electrically insulating layer. Spacers are formed on opposing sidewalls of the openings. The spacers on one of the opposing side walls of the openings are removed, thereby exposing portions of the first electrically insulating layer. Exposed portions of the first electrically insulating layer in the openings are removed, thereby exposing portions of the substrate. The spacers on another of the opposing sidewalls of the openings are removed, thereby exposing portions of the first electrically insulating layer. A third electrically insulating layer is formed in the openings over the exposed portions of the first electrically insulating layer and the exposed portions of the substrate.

Abstract: A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

Abstract: A method of distributed timing analysis for a network which has been partitioned into at least two partitions, with each partition being assigned to a separate timing analysis process which communicates with the other processes is provided. A depth first search is performed by the process assigned to the partition in which the node for which timing information is desired is located. When the depth first search encounters a node for which a timing value is required which is located in another partition, a request is immediately sent to the process corresponding to that partition for the required timing information. When the request for timing information from the other partition is answered, the associated node is placed in the propagation queue. Also, as a node is processed, successor nodes which have had their predecessors processed are added to the propagation queue. The nodes in the propagation queue are processes and timing values are computed.

Abstract: Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

Abstract: Solutions of graft polymers of a polymer having reactive hydrogen groups and grafted through reactive hydrogen groups an alkoxy metallic compound wherein the metal is titanium, zirconium and/or hafnium are useful as photoresist materials which are resistant to plasma. Also, compounds and graft polymers wherein the alkoxy metallic compound also contains silicon, tin or germanium are provided.

Abstract: A heat exchange assembly has a heat exchanger, a fan at one side and a drain tray assembly extending beneath the heat exchanger. The heat exchanger has a pipe along which heated or cooled water is supplied, and a stack of vertical, parallel plates between which the fan passes air. The drain tray assembly has a tray with a peripheral wall and a drain outlet at one end. An inverted gutter fits loosely within the tray spaced from its edges by two channels. The height of the gutter is such as to block the space between the upper surface of the tray and the underside of the heat exchanger so as to prevent air flow beneath the heat exchanger.

Abstract: A semiconductor structure of reduced contact resistance is provided by providing a layer of amorphous silicon-derived material on an epitaxial silicon substrate having an average dopant concentration of at least about 1020 atoms/cm3 in the contact material within about 500 Å of the substrate.

Abstract: A device for injecting pressurized fluids into a multiplate heat exchanger, comprising a leaktight chamber (2) provided with an arrangement for feeding and discharging a first pressurized fluid, a plate pack (1) placed in the chamber (2) and including channels for the flow of this first fluid mixed with a second pressurized fluid, and at least one nozzle (21) for injecting the second fluid. The nozzle (21) is connected to a pipe (22) for feeding the second fluid and to a pipe (24) for discharging the particles deposited on a filter unit placed inside the nozzle (21) downstream of the point where the two pipes (22, 24) join the nozzle (21) with respect to the direction of flow of the second fluid. The invention also relates to a method for cleaning such an injection device.

Abstract: An apparatus for attaching an electronic device to and removing an electronic device from a substrate. An electronic device pick-up and vacuum head applies a vacuum source to the electronic device for engaging, picking up and retaining the electronic device. The heat is transmitted by conduction through the structure of the device pick-up and vacuum head to the electronic device and solder for securing the electronic device on the substrate to heat the solder to its reflow temperature. The pick-up and vacuum head includes an electronic device engaging portion, a vacuum port, and a heat source engaging portion.

Abstract: A method for aligning a plurality of thin film transistor tiles for constructing a flat panel display. A coverplate is arranged on a coverplate support. A first layer of a bonding material is applied to at least one of a first side of each of the tiles and a surface of the coverplate on which the tiles are to be secured. The tiles are arranged on the coverplate, such that the first layer of bonding material is arranged between the tiles and the coverplate. The tiles are connected to an alignment apparatus. The tiles are aligned relative to each other and the coverplate. The tiles are at least partially secured to the coverplate.

Abstract: A vessel for contacting a plurality of objects with a fluid and including at least one bottom wall inclined downwardly from at least one sidewall to an inlet for providing an upwardly directed stream of fluid, and a distribution shield arranged in spaced relation to the bottom wall. The fluid stream causes the objects to flow upward from a moving bed thereof to a disengaging position. The distribution shield has an upper surface inclined downwardly and extending away from the vicinity of the object disengaging position to a return position such that disengaged objects fall on the upper surface of the distribution shield and move downward thereon to the return position from which they fall onto an upper portion of the inclined bottom wall and move downward thereon to a feed position.

Abstract: A method for selectively metallizing one or more through-holes, other openings (such as slots), or edges of an electronic circuit package comprising the steps of forming a layer of seeding solution on a drilled surface of a substrate of interest exposing this layer to light of appropriate wavelength, through a mask that does not completely cover the through-holes or openings and thereby results in the formation of metal seed on regions of the substrate surface corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper.