Abstract: Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.

Abstract: A method for manufacturing a thin semiconductor wafer. A semiconductor wafer is thinned from its backside followed by the formation of a cavity in a central region of the backside of the semiconductor wafer. Forming the cavity also forms a ring support structure in a peripheral region of the semiconductor wafer. An electrically conductive layer is formed in at least the cavity. The front side of the semiconductor wafer is mated with a tape that is attached to a film frame. The ring support structure of the semiconductor wafer is thinned to form the thinned semiconductor wafer. A backside tape is coupled to semiconductor wafer and to the film frame and the tape coupled to the front side of the semiconductor wafer is removed. The thinned semiconductor wafer is singulated.

Abstract: A multi-phase power converter and a method for balancing a plurality of currents in the multi-phase power converter. The multi-phase power converter has a pulse width modulation circuit, a current ordering circuit, and a plurality of currents, wherein each current of the plurality of currents has an associated phase. The converter determines the phase associated with one or more currents of a plurality of currents and whether a phase associated with one or more currents of the plurality of currents is active. The current levels of the plurality of currents are determined and a phase associated with a current having one of a lowest current level or a highest current level is activated.

Abstract: A semiconductor component having wetable leadframe lead surfaces and a method of manufacture. A leadframe having leadframe leads is embedded in a mold compound. A portion of at least one leadframe lead is exposed and an electrically conductive material is formed on the exposed portion. The mold compound is separated to form singulated semiconductor components.

Abstract: A multi-phase power converter and a method for balancing a plurality of currents in the multi-phase power converter. The multi-phase power converter that includes a pulse width modulator coupled to an oscillator. A plurality of currents are generated in response to output signals from the pulse width modulator. The levels of the currents are sensed and a sense signal is transmitted to the pulse width modulator. Switching circuitry within the pulse width modulator switches signals from the oscillator in accordance with the current levels, the levels of the signals from the oscillator, and whether at least one of the signals from the oscillator is either rising or falling.

Abstract: A method obtains a read-out signal of a pixel having at least a photosensitive element with a charge storage node. The method includes the steps of acquiring charge carriers, converted from impinging radiation on the photosensitive element, on the charge storage node, applying during the integration period at least one reset pulse, resetting incompletely the charge carriers acquired at the moment of applying the reset pulse, to obtain at least one linear response region for the pixel, and driving the pixel in weak inversion after the last incomplete reset pulse of the integration period so as to obtain a logarithmic response part. A corresponding pixel is also described.

Abstract: A method for detecting and correcting for a step loss condition. A back electromagnetic force signal is measured and compared to a reference voltage. The motor continues operating and the back electromagnetic force signal is measured again and compared to the reference voltage. If the measured levels of the back emf voltages are less than the reference voltage, a step loss condition has occurred and the stator field is repositioned.

Abstract: A correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a sensor circuit to generate a voltage value corresponding to electromagnetic radiation received on a photodetector included therein, and a sample and hold (S/H) stage including a sample switching-element and first and second capacitor-elements. The first capacitor-element is coupled between an output of the sensor circuit through the sample switching-element and a predetermined reference potential. The second capacitor-element has a first node coupled to the output of the sensor circuit through the sample switching-element and a second node coupled in series with an output of the S/H stage, the second node of the second capacitor-element further coupled through a calibration switching-element to a calibration voltage to sample a reset voltage value on the photodetector at a first time at a beginning of an integration period following reset of the sensor circuit.

Abstract: A power supply and a method for compensating for a droop component in an output signal of the power supply. The power supply may include an error amplifier and an oscillator coupled to a pulse width modulation circuit. Outputs of the pulse width modulation circuit are connected to switching circuits that have outputs coupled to an output node. The power supply further includes a droop compensation circuit connected to the output of the power supply, the outputs of the switching circuits, and to an input of the error amplifier. The droop compensation circuit includes an amplifier coupled to a feed-forward network and a current source coupled to the feed-forward network. The current source sources a current to or sinks a current from the feed-forward network to generate a droop compensation signal that is transmitted to the error amplifier. The current source may be controlled by a digital-to-analog circuit.

Abstract: A method and apparatus for white balance correction using illuminant estimation includes calculating a weighted average of the color coordinates of points in a color image to determine an estimated illuminant of the color image in the color space of an image sensor and selecting white balance correction factors for the color image using the estimated illuminant of the color image and color coordinates of one or more of a number of reference illuminant points in the color space of the image sensor.

Abstract: A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shield electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shield electrodes. A gate electrode in at least one of the trenches is connected to at least one shield electrode in the trenches.

Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Abstract: A voltage regulator (10) having an undervoltage protection circuit 11 and a method for protecting against an output voltage out being less than a predetermined level. The voltage regulator has an undershoot limitation circuit (11) coupled between a feedback network (30) and a regulation section (42). A power factor correction circuit (46) is connected to the regulation section. An output voltage out from the power factor correction circuit (46) is fed back to the feedback network (30), which transmits a portion of the output voltage to the undershoot limitation circuit (11). If the output voltage is greater than the predetermined voltage level, a switching circuit portion (34) of the undershoot limitation circuit (11) transmits a normal control signal to the regulation circuit (42). If the output voltage is less than the predetermined voltage level, the switching circuit portion transmits an enhanced control signal to the regulation circuit.

Abstract: A method and circuit for detecting a current and compensating for an offset voltage. The circuit includes two comparators where one of the comparators has two input terminals and the other comparator has three input terminals. An input terminal of each of the two comparators are commonly connected together, the other input terminal of the two-input comparator is coupled for receiving a first reference voltage, and a second input terminal of the three-input comparator is coupled for receiving a second reference voltage. During a first portion of the period of a sense signal the two comparators operate in a sensing mode and during a second portion of the period of the sense signal the comparator having the three input terminals operate in a current nullification mode or an offset voltage compensation mode. An offset compensation signal is generated during the second portion of the sense signal.

Abstract: A semiconductor component that includes a contact landing pad and a method for manufacturing the semiconductor component. A trench having sidewalls is formed in a semiconductor material and a dielectric material is formed on the sidewalls of the trench. An electrically conductive material is formed on the sidewalls and fills the trench. A multi-layer dielectric structure is formed over the electrically conductive material in the trench, where the multi-layer dielectric material is comprised of a dielectric material of one type sandwiched between dielectric materials of a different type such that an etch rate of the middle layer of dielectric material is different from those of the outer layers of dielectric material. Portions of the middle layer of dielectric material are removed and replaced with electrically conductive material that, in combination with portions of the electrically conductive material in the trench, form a contact landing pad.

Abstract: A method and circuit for changing a threshold voltage of a transistor. The circuit includes a sense circuit coupled to a switching transistor, a circuit transistor and to one terminal of a resistor. The other terminal of the resistor is connected to a body contact. The switching transistor directs current along one of two different paths in response to an input voltage sensed by the sense circuit. When the switching transistor directs a first current along one path, the first current is steered towards the resistor and flows through the resistor in one direction and when the switching transistor directs a second current along the other path, the second current is directed towards the resistor and flows through the resistor in the opposite direction from the first current. Steering the currents varies the potential of a body with respect to the potential at the source of the circuit transistor.

Abstract: A method for manufacturing a semiconductor component that includes a leadframe having a non-metallic base structure and an intermediate leadframe structure. The non-metallic base structure may be, among other things, paper, cellulose, or plastic. A layer of electrically conductive material is formed over the non-metallic base structure. A circuit element attach structure and a plurality of leadframe leads are formed from the layer of electrically conductive material. A circuit element is coupled to the circuit element attach structure and electrically coupled to the plurality of leadframe leads. The circuit element is encapsulated and at least the non-metallic base structure is removed. Alternatively, a plurality of leadframe leads may be formed on the electrically conductive layer and a circuit element is placed over the electrically conductive layer. The circuit element is electrically coupled to the plurality of leadframe leads and encapsulated.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A body region is formed in a semiconductor material that has a major surface. A gate trench is formed in the epitaxial layer and a gate structure is formed on the gate trench. A source region is formed adjacent the gate trench and extends from the major surface into the body region and a field plate trench is formed that extends from the major surface of the epitaxial layer through the source and through the body region. A field plate is formed in the field plate trench, wherein the field plate is electrically isolated from the sidewalls of the field plate trench. A source-field plate-body contact is made to the source region, the field plate and the body region. A gate contact is made to the gate region.