Abstract: An integrated circuit having a memory, and a method of operating the same, which provides for improved test efficiency. The memory includes static random access memory cells which power up in a preferred state; the preferred state draws less standby power, and is less susceptible to noise and other undesired effects which could cause upset of the stored data state. The method of testing the memory includes writing the memory cells with the complement of the preferred data state, so that all memory cells contain the higher current state; measurement of the standby current after the writing of the complement of the preferred data state will thus measure the worst case standby current. The method of testing may also include a disturb test, where the cell under test, or a neighboring cell in an adjacent row, is repeatedly accessed; such disturbing thus performs the worst case test, since the preferred state is more stable than its complement.

Abstract: A power amplifier has a signal input stage to which an input signal is applied to produce an input stage output. An input signal amplifier is connected to receive the input signal to produce an amplified input signal from an active device at an output of the input signal amplifier. A push-pull signal output stage has first and second transistors. The first transistor has a current path connected between a supply voltage and an output node, and the second transistor has a current path connected between a reference voltage and the output node. The amplifier output provides variable drive current directly to a base of the first transistor, thereby enabling increased drive current to be realized. The power amplifier also includes a common mode biasing circuit connected to bias the first and second transistors for class AB operation, and the input stage output provides a signal base drive current to the first transistor separate from the common mode biasing circuit.

Abstract: A circuit for initializing the output voltage of an analog circuit includes a switch operative to connect an input of the analog circuit to a first reference potential during an initializing period. A comparator is connected to compare the output voltage of the analog circuit with a second reference potential to produce an output representing the comparison. A resistor ladder having a plurality of voltage step output lines along its length is connected to inputs of a multiplexer, the multiplexer having an output connected to bias the analog circuit. A counter having a clock input and a count output is connected with the count output connected to operate the multiplexer to sequentially select among the steps of the resistor ladder. A circuit clocks the counter until the output of the comparator reaches a predetermined value, wherein a voltage step output line of the resistor ladder is selected to control the output of the multiplexer.

Abstract: A method for forming aluminum metallization for contacting a conductive element in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to a first disclosed embodiment, a first aluminum alloy layer is formed within the contact, optionally with a barrier layer between it and the underlying electrode. An etch stop layer is formed thereover, of a material which has a low etch rate to an aluminum etchant species. A second, thicker, aluminum alloy layer is formed thereover. The second aluminum layer is etched until the etch stop layer is reached; the mask for defining the metal line may have an edge within the dimensions of the contact opening. After removal of the exposed etch stop layer, a timed etch removes the first aluminum alloy layer, without exposing the bottom of the contact. The metal line may thus be safely formed, without requiring an enclosure around the contact opening.

Abstract: A voltage level sense circuit that has temperature compensation is disclosed. The circuit includes charge-sharing capacitors in each of an input leg and a reference leg. The charge-sharing capacitors are precharged to voltages that are integral multiples of the forward bias voltage drop across the base-emitter junction of a bipolar transistor. The bipolar transistors in the input leg differ from those in the reference leg, so that the difference in base-emitter on voltages increases with temperature. The increasing difference in base-emitter on voltage compensates for the decrease in the absolute value of the base-emitter on voltage with temperature. Voltage level sensing is accomplished by sampling the input voltage with a capacitor, charge-sharing the sampled voltage with one of the precharged charge-sharing capacitors, and coupling the charge-shared result to an input of a differential amplifier comparator.

Abstract: An integrated circuit memory is disclosed which includes redundant columns associated with a sub-array, and in which multiple input/output terminals are placed in communication with multiple columns in the sub-array in read and write cycles. The number of redundant columns per sub-array is less than the number of input/output terminals. A multiplexer connects the selected redundant column to a selected sense amplifier and write circuit for the input/output with which the replaced column was associated. The multiplexer includes pass gates connected to the bit lines of the redundant column, and fuses connected between each of the pass gates and each of the sense/write circuits selectable for the redundant column. Those of the fuses which are not associated with the selected input/output are opened, and the fuses associated with the selected input/output are left intact.

Abstract: An operational amplifier input stage has at least two positive input transistors and one negative input transistor for providing more accurate and efficient limiting or rectification in limiter and rectifier circuits. The two positive input transistors are connected in parallel having a common drain connected to one side of a load and the negative input transistor's drain is connected to the other side of the load. The sources of all transistors are connected to a common node which is connected to a constant current source. This arrangement enables simplistic high accuracy limiting and rectifier circuits, having a reduced number of extrinsic components, thereby reducing unwanted speed limitations, to be realized. The operational amplifier input stage is also very useful in low supply circuit applications.

Abstract: An input buffer circuit is disclosed which has feedback hysteresis transistors having similar size characteristics as the drive transistors. The drive transistors are located in a first inverting CMOS stage, connected in conventional CMOS inverter fashion. The drains of the drive transistors are connected to the input of an inverter, the output of which drives the signal to elsewhere in the integrated circuit. A first hysteresis leg is provided, consisting of a plurality of p-channel transistors with their source/drain paths in series between the input of the inverter and a power supply voltage; the gate of at least one of the p-channel hysteresis transistors is coupled to the output of the inverter, and the gates of those of the hysteresis transistors that are not coupled to the inverter output are biased to ground. A second hysteresis leg of n-channel hysteresis transistors, similarly but complementarily configured, is provided between ground and the inverter input.

Abstract: A full wave rectifier includes an amplifier having a minus input, a plus input and an amplifier output; an input resistor connected between a circuit input and the minus input; and a current bridge having an output terminal connected to the circuit output, a first terminal connected to the minus input and a second terminal connected to the amplifier output. The current bridge includes a first current mirror circuit and a second current mirror circuit. The first current mirror circuit includes a first current source and a second current source, a source end of each current source of the first and second current sources being connected to the first terminal, a drain end of the first current source being connected to the second terminal and a drain end of the second current source being connected to the output terminal.

Abstract: An integrated circuit memory is disclosed which has a parallel test read mode. The memory includes comparators for comparing multiple data words, on a bit-by-bit basis, during the parallel read mode, with the result of the comparison used to enable or disable the output buffers. In test mode, in the event of a failed parallel test comparison, the comparator causes the output buffers to go into a high-impedance state; for a passing parallel test, the actual data state is presented by the output terminals. The comparison circuitry is in parallel with the output data path, so that the output data path is not adversely affected by the test circuitry, and so that the access time in test mode is the same as the access time during normal operation (assuming a passing test). The technique may be adapted to wide parallel test schemes.

Abstract: A static random-access memory is disclosed which utilizes bit line pairs for each column of memory cells for communication of data between external data terminals and the memory cells. A precharge transistor is connected between each bit line and a precharge voltage, for example V.sub.cc, and an equilibration transistor is connected between the bit lines in each bit line pair. The precharge and equilibration transistors are controlled according to selection of the column, so that all columns which are not selected by the column address are precharged and equilibrated, including the unselected columns in the same sub-array as the selected columns.

Abstract: An integrated circuit having a normal operating mode and a special operating mode, such as a special test mode, is disclosed. The special test mode is enabled by a series of signals, such as overvoltage excursions at a terminal, rather than by a single such excursion, so that it is less likely that the special test mode is entered inadvertently, such as due to noise or power-down and power-up of the device. The circuit for enabling the test mode includes a series of D-type flip-flops, each of which are clocked upon detection of the overvoltage condition together with a particular logic level applied at another terminal; multiple series of flip-flops may be provided for multiple special test modes. Additional features include the provision of a power-on reset circuit which locks out the entry into the test mode during power-up of the device.

Abstract: A static random-access memory is disclosed which utilizes bit line pairs for each column of memory cells for communication of data between external data terminals and the memory cells. A precharge transistor is connected between each bit line and a precharge voltage, for example V , and an equilibration transistor is connected between the bit lines in each bit line pair. The precharge and equilibration transistors are controlled according to selection of the column, so that all columns which are not selected by the column address are precharged and equilibrated, including the unselected columns in the same sub-array as the selected columns.

Abstract: An integrated circuit, such as a memory, having an internal data bus and circuitry for precharging the same is disclosed. Each data conductor in said data bus is associated with a dummy data conductor, which is driven to a complementary logic state from that of its associated data conductor. During precharge and equilibration at the beginning of a cycle, initiated by an address transition detection or by a clock signal, each data conductor is connected to its dummy data conductor so that the data conductor is precharged to a midlevel by way of charge sharing. Also during precharge and equilibration, the data driver is placed in a high impedance state by the sense amplifier output nodes both going to the same logic level. This midlevel precharge allows for faster switching, and reduced instantaneous current, than obtained for rail-to-rail switching.

Abstract: An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder associated with each column, each of which includes a set of address fuses into which an address is programmed, responsive to which its associated redundant column is to be selected. A plurality of redundant sense amplifiers are each associated with selected redundant columns, and are each controlled to begin the sense operation prior to propagation of the address signal through the redundant column decoders and summing circuitry. In the event that the received memory address does not match any of the programmed values in the redundant column decoders associated with a redundant sense amplifier, the sense operation is terminated.

Abstract: An integrated circuit having a memory, and a method of operating the same, which provides for improved test efficiency. The memory includes static random access memory cells which power up in a preferred state; the preferred state draws less standby power, and is less susceptible to noise and other undesired effects which could cause upset of the stored data state. The method of testing the memory includes writing the memory cells with the complement of the preferred data state, so that all memory cells contain the higher current state; measurement of the standby current after the writing of the complement of the preferred data state will thus measure the worst case standby current. The method of testing may also include a disturb test, where the cell under test, or a neighboring cell in an adjacent row, is repeatedly accessed; such disturbing thus performs the worst case test, since the preferred state is more stable than its complement.

Abstract: An integrated circuit having a memory with a parallel test data comparator is disclosed. The parallel test data comparator includes a NOR-like function which has parallel transistors having their gates connected to an input from each of the internal data lines, and a NAND-like function which also has parallel transistors having their gates connected to an input from each of the internal data lines. The output nodes of each function are biased by single transistors, each controlled by a test enable signal, and each of which can be overpowered by any one of the parallel transistors. In the event that all of the internal data lines are at the same logic level, the outputs of the NOR and NAND will be at the same logic level; conversely, if any one (or more) of the internal data lines is different from the rest, the outputs of the NOR and NAND will be at different logic levels. An exclusive-OR-like function is used to generate a pass or fail signal responsive to the output nodes of the NOR and NAND.

Abstract: An ESD protection circuit and structure for implementation within an integrated circuit is disclosed. The protection circuit includes a diode, serving as a triggering device, and a lateral bipolar transistor. The triggering voltage of said diode is selected by an implant underlying a first field oxide structure adjacent a first diffused region to which the external terminal is connected. The lateral bipolar transistor uses the first diffused region to which the external terminal is connected as the collector region, a second diffused region opposite the first field oxide structure from said first diffused region as the emitter, and the substrate, or epitaxial layer, as the base. A second field oxide structure encircles the emitter region and has a distance thereacross which is selected in order to provide sufficient base resistance that, upon junction breakdown of the diode, the base-emitter junction of the lateral transistor is forward biased and the transistor turned on.