Abstract: Copper plating baths containing a leveling agent that is a reaction product of a compound including a heteroatom chosen from nitrogen, sulfur and a mixture of nitrogen and sulfur, with a polyepoxide compound containing an ether linkage that deposit copper on the surface of an electronic device and in apertures on such substrate are provided. Such plating baths deposit a copper layer on the substrate surface that is substantially planar across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: A method of purifying an organometallic compound by heating the organometallic compound in the presence of a trialkyl aluminum compound and a catalyst.

Abstract: Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed.

Abstract: Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.

Abstract: Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material.

Abstract: A counter electrode for use in an electrochemical cell suitable for analysis of an electroplating composition, the counter electrode comprising a conductor; a sheath disposed about the conductor; an electrolyte disposed within the sheath; and an optionally porous element on the sheath, the porous element providing signal communication between the electrolyte and an analyte.

Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

Abstract: Compounds that function to provide level or uniform metal deposits are provided. These compounds are particularly useful in providing level copper deposits. Copper plating baths and methods of copper plating using these compounds are also provided. These baths and methods are useful for providing a planarized layer of copper on a substrate having small apertures. The compositions and methods provide complete fill of small apertures with reduced void formation.

Abstract: Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: A method of manufacturing electronic devices containing one or more layers of materials that are sensitive to the strong chemicals used to remove cross-linked polymeric layers such as photoresists and antireflective coatings is provided. The cross-linked polymeric layers can be easily removed following etching through the use of certain removable layers disposed between the substrate and the cross-linked polymeric layers.

Abstract: Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

Abstract: Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.

Abstract: Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Abstract: Porous thermoset dielectric materials having low dielectric constants useful in electronic component manufacture are provided along with methods of preparing the porous thermoset dielectric materials. Also provided are methods of forming integrated circuits containing such porous thermoset dielectric material.

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract: An object of the present invention is to provide an electroless displacement gold plating solution, an additive for use in preparing the plating solution, and a metal composite material obtained by treatment with the plating solution. The electroless displacement gold plating solution contains a water-soluble gold compound, a complexing agent, and a water-soluble silver compound, and optionally a water-soluble thallium compound, a water-soluble lead compound, a water-soluble copper compound or a water-soluble nickel compound, or any combination thereof. The plating solution has good stability and, even not only immediately after the preparation but also after a lapse of a certain time period from the preparation, can be used for production of a metal composite material exhibiting an even plated appearance and also having a thick gold coating film.

Abstract: A method for electrolytic copper plating using an electrolytic copper plating solution including a compound containing a structure of —X—S—Y—, wherein X and Y are independently chosen from hydrogen atom, carbon atom, sulfur atom, nitrogen atom, and oxygen atom, and X and Y may be the same only when they are a carbon atom, and by contacting the electrolytic copper plating solution with ozone is disclosed.

Abstract: Methods of preparing porous optical materials are provided. These methods allow for the selection of the desired pore size and level of porosity in the porous optical material. Such methods utilize a preformed polymeric porogen.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.