Abstract: Circuits and methods to charge batteries of a portable device simultaneously with supplying power to the device for its operation, using a power source with limited maximum current, as e.g. an USB port, have been achieved. The system invented relies upon digital control only. No direct sensing of the current required for the operation of the portable device is required. The control takes care that the sum of the charging current and of the current to run the portable device does not exceed the maximum allowable current of the power source. The current required to run the portable device has precedence over the charging current.

Abstract: Systems and methods to achieve a startup circuit of bandgap voltage reference generator circuits monitoring a current flow in the bandgap voltage reference generator circuit have been achieved. The startup circuit can operate at supply voltages of about one threshold voltage and is therefore appropriate for low voltage applications. The monitoring of a current through an electrical component inside the bandgap voltage reference generator circuit by replication the component branch in a scaled version saves power and does not disturb the normal operation of the current-mode bandgap voltage reference generator. The startup circuit invented can be applied for current-mode bandgap voltage reference generator circuits as well as for voltage-mode bandgap voltage reference generator circuits.

Abstract: Gimbal designs are provided that minimize adverse dynamic performance of a HDD suspension, particularly subsequent to head-disk-interface (HDI) interactions. The improvement of operational performance can be seen in graphical representations of the vibrational modes of a gimbal mounted slider subsequent to such HDI interactions. Each gimbal design includes a ramp limiter formed as two separated arms connected by one or two transverse bars and a routing of conducting traces that relieves stress and minimally contacts these bars.

Abstract: Systems and methods for realizing current drivers without current or voltage feedback for devices that require accurate current drive with zero standby current has been disclosed. In a preferred embodiment of the invention this current driver is applied for write circuits for MRAMs. A fast and accurate reference current is generated by diode voltage divided by resistor without any feedback. The diode current is not fed back from the reference current. The diode current is generated from a regulated voltage. Temperature compensation of the write current is inherently built in the diode current reference. Fine-tuning of the temperature coefficient is achieved by mixing poly and diffusion resistors. A switch inserted in the current driver can turn on the driver fast and without a need for standby current. Leading boost in the current driver can fast charge the large coupling capacitance of word and bit lines and speed up write timing.

Abstract: A process (and the structure resulting therefrom) is described for manufacturing a magnetic write head in which there is no physical interface between the first and second trailing shields. This is achieved by laying down a sacrificial layer which is patterned to extend inwards towards the top yoke whereby the dimensions and shapes of the shields are defined.

Abstract: A spin torque oscillator is described in which the conventional Field Generation Layer (FGL) is replaced by a bilayer, one of whose members exhibits perpendicular magnetic anisotropy while the other exhibits conventional in-plane anisotropy. Provided the layer with the perpendicular anisotropy is the one that is closest to the spacer layer, the device is able to generate microwaves at current densities as low as 1×108 A/cm2.

Abstract: A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-?m2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.

Abstract: The invention discloses a method and apparatus for determining the rotational status of a gear wheel whether or not it is actually turning. A key feature is the magnetic angle sensor that is used. Said sensor comprises a bridge structure of four MR devices in a square array. The direction of the pinned reference layer is the same for all four devices and lies along one of the diagonals of said square array. A single wafer process is used to manufacture the invented device.

Abstract: A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

Abstract: A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

Abstract: The problem of magneto-resistive sensor drift with age has been solved by normalizing the sensor's output relative to its output when it is in a selected reproducible state. Details for the method to accomplish this normalization are disclosed together with several examples of how the method can be utilized.

Abstract: Circuits and methods system for a DC-to-DC conversion using the inductance of a motor coil are disclosed. The invention is especially applicable for mobile electronic devices having a motor and requiring a DC-to-DC conversion. By using the coil of the motor for DC-to-DC conversion and for the purpose of a motor no space for an additional coil is required. For motor control an H-bridge arrangement is provided allowing motor movement in both directions, to brake and free run. By adding two diodes and a capacitor and modulation of a switch of the H-bridge a DC-to-DC conversion has been made possible.

Abstract: A decorative panel is manufactured for installation on a surface of a room. The decorative panel is formed from a material that can be shaped having a decorative portion, two female mounting portions and two male portions. The female portions have punched holes for fastening the panels directly to a surface, and the male portions of an adjacent panel are positioned into the female portions to partially hold the adjacent panel and to obscure from view the punched holes and fastening hardware. The panel design and installation method allows the decorative panels to be attached directly to a building material such as sheet rock without any intervening supporting structure.

Abstract: A perpendicular magnetic recording (PMR) head has a pole tip shielded laterally by a separated pair of bottom side shields and shielded from above by an upper shield. The bottom side shields surround a lower portion of the pole tip while the upper portion of the pole tip is surrounded by non-magnetic layers. The bottom shields and the non-magnetic layer form a wedge-shaped trench in which the pole tip has been formed by a self-aligned plating process. A write gap layer and an upper shield is formed above the side shields and pole. The resulting structure substantially eliminates track overwrite while maintaining good track definition.

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

Abstract: A slider is formed by a three-step ion milling process with an ABS topography that provides aerodynamic stability at sub-nanometer flying heights. The ABS design significantly eliminates the accumulation of lubricant and removes whatever lubricant does accumulate by use of a shallow dam at the trailing edge. In addition, a junction between a down-track channel and a cross-track channel directs airflow towards a center pad in which a transducer is embedded so that the pressure at the pad is enhanced even under high altitude conditions. The slider ABS is divided into two portions by a transverse deep air channel, but the channel is bridged by the cross-track channel which crosses the deep air channel with sides of unequal height. This dual height bridge allows variations in skew angle to be compensated so that pressure variations across the disk tracks are significantly reduced.

Abstract: A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x, or (CoFe/NiCo)x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

Abstract: A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

Abstract: A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser generated plasmons in a magnetic core plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. To enable the TAMR head to operate most effectively, the maximum gradient and value of the magnetic recording field should be at a point of the magnetic medium that is as close as possible to the point being heated. In addition, the coupling between the optical mode and the plasmon mode should be efficient so that maximum energy is transmitted to the medium. The present invention achieves both these objects by surrounding the magnetic core of a plasmon antenna by a variable thickness plasmon generating layer, whose thinnest and shortest portion is at the ABS end of the TAMR head and whose thickest and longest portion efficiently couples to the optical mode of a waveguide to produce a plasmon.

Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.