Abstract: A linkage lock comprises a lock body, a linkage chain, and a lock mechanism arranged in the lock body. The linkage chain is formed via linking a plurality of link plates and has a first end joined with the lock body and a second end able to be inserted into and secured to a socket of the lock body. The lock body has a shaft. When intending to collect the linkage lock whose second end is unlocked, the user winds the linkage chain around the surface of the shaft with the shaft being a central axis to fold the linkage lock.

Abstract: The metallic coupler circuit may form a sensing circuit with a status output component and configured to sense physical parameters of the RF electrical signal flowing through the connector or presence of moisture in the connector.

Abstract: An etching method. The method includes etching a first plurality of silicon wafers in a first enchant, each silicon wafer having SiO2 and Si3N4 deposited thereon, where the etching includes dissolving a quantity of the SiO2 and a quantity of the Si3N4 in the first echant. A quantity of insoluble SiO2 precipitates. A ratio of a first etch rate of Si3N4 to a first etch rate of SiO2 is determined to be less than a predetermined threshold. A portion of the first etchant is combined with a second etchant to form a conditioned etchant. A second plurality of silicon wafers is etched in the conditioned etchant. A ratio of a second etch rate of Si3N4 to a second etch rate of SiO2 in the conditioned etchant is greater than the threshold. A method for exchanging an etching bath solution and a method for forming a selective etchant are also disclosed.

Abstract: A notch positioning type soldering structure and a method for preventing a pin deviation can prevent a plurality of pins of an electronic component from being deviated when the pins are soldered onto a printed circuit board by a solder, and each of at least two solder pads includes at least one notch, and the solder pads are installed in an alignment direction on the printed circuit board, such that the notch positioning type soldering structure and the method for preventing a pin deviation can improve the efficiency of manufacturing processes and reduce the manufacturing cost.

Abstract: Structures and methods for forming the same. A semiconductor chip includes a substrate and a transistor. The chip includes N interconnect layers on the substrate, N being a positive integer. The chip includes a cooling pipes system inside the N interconnect layers. The cooling pipes system does not include any solid or liquid material. Given any first point and any second point in the cooling pipes system, there exists a continuous path which connects the first and second points and which is totally within the cooling pipes system. A first portion of the cooling pipes system overlaps the transistor. A second portion of the cooling pipes system is higher than the substrate and lower than a top interconnect layer. The second portion is in direct physical contact with a surrounding ambient.

Abstract: A system for processing a communication data item. The communication data item is divided into at least two unencrypted packets to be encrypted. Each encrypted packet is generated from a corresponding unencrypted packet. Each unencrypted packet has a packet header and plaintext data. The packet header has an identifier field that includes a packet identifier that is identical for all unencrypted packets. Generating an encrypted packet for each unencrypted packet includes: determining a vector identifier from the identical packet identifier, wherein the vector identifier is associated with the identical packet identifier; ascertaining an initial vector from the vector identifier; and forming an encrypted packet header by inserting the vector identifier into a first portion of the packet header and encrypting a second portion of the packet header through use of the initial vector. The encrypted packets are subsequently decrypted and combined to reconstruct the communication data item.

Abstract: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.

Abstract: A reaction system and method for removing heteroatoms from oxidized-heteroatom-containing hydrocarbon streams and products derived therefrom are disclosed. An oxidized-heteroatom-containing hydrocarbon feed is reacted in a reaction system thereby forming non-ionic hydrocarbon products. The products derived therefrom are useful as transportation fuels, lubricants, refinery intermediates, or refinery feeds.

Abstract: A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor.

Abstract: A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

Abstract: A pouch comprising a top pouch layer, a bottom pouch layer sealed to the top pouch layer to form a reservoir, wherein the reservoir is configured to hold contents, and an actuator formed from a portion of the top pouch layer, wherein the portion of the top layer is sealed with a corresponding portion of the bottom layer, wherein the actuation of the actuator releases the contents from the reservoir is provided. Furthermore, an associated method is also provided.

Abstract: Provided is a coaxial cable connector compression tool comprising a resilient coaxial cable retaining mechanism, having a tool mounting portion, affixed to said compression tool and a compliant cable receiving portion configured to releasably retain a coaxial cable, wherein the cable retaining mechanism, which may be comprised or one or multiple pieces, bears minimal compression forces while positioned on said compression tool to hold said coaxial cable in proper alignment when said compression tool is operated. Moreover, a method is provided for retaining a coaxial cable in proper alignment during compression of a coaxial cable connector onto said coaxial cable.

Abstract: A system, method and program product for communicating a privacy policy associated with a reference template. The method includes assigning a first identifier for identifying a reference template created from biometric data collected, defining a second identifier for identifying a privacy policy that indicates a level of protection to be provided by a relying party requesting access to the reference template, the second identifier including an accept-reject provision for controlling the proper use and handling of the biometric data, cryptographically binding the reference template to the privacy policy and transmitting, responsive to a request received from the relying party, the accept-reject provision for the reference template, where based on a response received from the relying party to the accept-reject provision for the privacy policy, the reference template is either transmitted or not transmitted to the relying party.

Abstract: A contact assembly comprising: a contact pin having a first end and a second end, the contact pin including a ramped portion, and a contact sleeve retainably attached to the first end of the contact pin, the contact sleeve having a flanged end and a non-flanged end, wherein the contact sleeve includes a one or more fingers, wherein, when in a first position, clearance exists between the contact sleeve and the contact pin, wherein, when in a second position, the one or more fingers of the contact sleeve engage an inner surface of a tubular center conductor to increase a moving force required to displace the contact assembly within the tubular center conductor is provided. An associated method is also provided.

Abstract: A solder ball structure and a method for forming the same. The structure includes (i) a first dielectric layer which includes a top dielectric surface, (ii) an electrically conductive line, (iii) a second dielectric layer, (iv) a ball-limiting-metallurgy (BLM) region, and (v) a solder ball. The BLM region is electrically connected to the electrically conductive line and the solder ball. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface of the first dielectric layer and is entirely in the BLM region does not exceed a pre-specified maximum value. The pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface of the first dielectric layer.

Abstract: Method of forming wires in integrated circuits. The methods include forming a wire in a first dielectric layer on a substrate; forming a dielectric barrier layer over the wire and the first dielectric layer; forming a second dielectric layer over the barrier layer; forming one or more patterned photoresist layers over the second dielectric layer; performing a reactive ion etch to etch a trench through the second dielectric layer and not through the barrier layer; performing a second reactive ion etch to extend the trench through the barrier layer; and after performing the second reaction ion etch, removing the one or more patterned photoresist layers, a last formed patterned photoresist layer removed using a reducing plasma or a non-oxidizing plasma. The methods include forming wires by similar methods to a metal-insulator-metal capacitor.