Abstract: The present invention relates to a circuit device for protection against electrostatic discharge, and being immune to the latch-up phenomenon. The circuit device is of the integrated type in a portion of a semiconductor integrated circuit. The device includes an active limiting element and a resistor connected in series between a terminal of the active element connected to an input/output pin of the integrated circuit, and a terminal of a circuit to be protected. The active element is a bipolar transistor having a base terminal and an emitter-acting collector terminal connected together. The distributed resistor is formed in an emitter-acting collector region of the transistor which is diffused and elongated at the surface inside a base pocket of the transistor.

Abstract: A non-volatile memory device is organized with memory cells that are arranged by row and by column. The memory device includes a sector of matrix cells, row decoders and column decoders suitable to decode address signals and to activate respectively the rows or said columns, at least a sector of redundancy cells such that it is possible to substitute a row of the sector of matrix cells with a row of the sector of redundancy cells. The non-volatile memory device comprises a local column decoder for the matrix sector and a local column decoder for the redundancy sector. The local column decoders are controlled by external signals so that the row of the redundancy sector is activated simultaneously with the row of the matrix sector.

Abstract: The sensing circuits comparing the current flowing in the cell with a plurality of reference currents are not identical to each other but differently amplify the compared currents. In particular, the sensing circuit associated with the lowest reference current amplifies the cell current more than the other sensing circuits and to the respective reference current. The current dynamics is thereby increased and it is possible to keep the reading voltage low, since the inherent characteristic of the lowest reference current may be very close to or directly superimposed on that of the immediately preceding memory cell current distribution, retaining the possibility of discriminating between the different logic levels.

Abstract: A bus arbitration system is described which includes an arbitrator for controlling accesses to a memory bus by a plurality of memory users in response to requests made by those memory users. Each memory user reads the address if a current access to memory and generates a same-address-set signal when the address of the last access by that memory user lies in the same set as the address of the current access. The arbitrator holds for each memory user a predetermined number of accesses which are permitted by that memory user during an access span, and, responsive to a request, grants up to that predetermined number of accesses provided that the same-address-set signal is asserted.

Abstract: A method and apparatus to dynamically modify the internal compensation of a low drop out linear voltage regulator is presented. The process involves using zero mobile compensation; when the output pole of the voltage regulator moves, a compensating zero is moved toward higher frequencies. This compensation zero is used to compensate the effect of a second pole in the loop gain. The circuit includes an input stage having an error amplifier. The error amplifier includes a differential stage output coupled to an output terminal of the buffer stage. An output stage of the circuit includes an output transistor having a conduction terminal connected to an output terminal of the voltage regulator, and having a control terminal coupled to the output terminal of the buffer stage. Additionally, a variable compensation network is connected between the differential stage output and a voltage reference. This variable compensation network can include an RC circuit having a resistive transistor.

Abstract: A manufacturing process that includes, in succession: depositing a gate oxide layer on a silicon substrate defining a transistor area and a resistor area; depositing a multicrystal silicon layer on the gate oxide layer; removing selective portions of the multicrystal silicon layer to form a gate region over the transistor area and a protective region completely covering the resistor area; forming source and drain regions in the transistor area, laterally to the gate region; forming silicide regions on and in direct contact with the source and drain regions, the gate region and the protective region; removing selective portions of the protective region to form a delimitation ring; and implanting ionic dopants in the resistor area, inside the area defined by the protective ring, to form a lightly doped resistor which has no silicide regions directly on it.

Abstract: Presented is a process for manufacturing virtual ground electronic memory devices integrated in a semiconductor having a conductivity of a first type and having at least one matrix of floating gate memory cells. In the matrix there are a number of continuous bit lines extending across the substrate as discrete parallel strips, and a number of word lines extending in a transverse direction to the bit lines. The method begins by forming gate regions of the memory cells to produce a number of continuous strips seperated by parallel openings. Then, a dopant is implanted to form, within the parallel openings, the bit lines with conductivity of a second type. Spacers are formed on sidewalls of the gate regions. Then a first layer of a transition metal is deposited into said parallel openings, and the transition metal layer is subjected to a thermal treatment for reacting it with semiconductor substract and forming a silicide layer over the bit lines.

Abstract: There is disclosed a computer,system including a microprocessor on an integrated circuit chip comprising an on-chip CPU and a communication bus. The communication bus provides a parallel communication path between the CPU and the first memory local to the CPU. An external port of the integrated circuit is connected to said bus and to an external computer device having a second memory. The external computer device is operable to transmit control signals through the port: a) to suspend execution by the CPU of instructions obtained from the first memory; b) to provide from the second memory boot code to be executed by the CPU; and c) to restart operation of the CPU using said boot code. There is also disclosed a method of operating such a computer system.

Abstract: A process for manufacturing electronic semiconductor integrated electronic memory devices having virtual ground and including at least a matrix of floating gate memory cells formed on a semiconductor substrate with a plurality of continuous bit lines extending across the substrate as discrete parallel strips begins with forming an oxide layer over the matrix region. Then, the semiconductor throughout is deposited with a stack structure which includes a first conductor layer, a first dielectric layer, and second conductor layer. Next, a second dielectric layer is formed. Floating gate regions are defined by photolithography using a mask of “POLY1 along a first predetermined direction”, and associated etching, to define, in the stack structure, a plurality of parallel openings. These openings are implanted to confer a predetermined conductivity on the bit line regions. Next, the parallel openings are filled with a photo-sensitive material to protect the matrix bit lines.

Abstract: The analog processor of this invention is programmable and capable of storing the processing coefficients in analog form. It comprises a storage section having at least one output, plural outputs in most cases, and being adapted to respectively generate programming signals on such outputs; the storage section is input a plurality of supply voltage signals and is operative to produce, in connection with information stored therein, one of the supply voltage signals on each of the outputs, it being understood that one voltage signal may be produced on several such outputs. Advantageously, the processor can also be programmed in a simple manner from circuits of the digital type if switches controlled by storage elements are used in the storage section.

Abstract: A method for testing memory cells, and in particular virgin memory cells, in a multilevel memory device having a plurality of memory cells.

Abstract: Method of manufacturing an edge structure for a high voltage semiconductor device, including a first step of forming a first semiconductor layer of a first conductivity type, a second step of forming a first mask over the top surface of the first semiconductor layer, a third step of removing portions of the first mask in order to form at least one opening in it, a fourth step of introducing dopant of a second conductivity type in the first semiconductor layer through the at least one opening, a fifth step of completely removing the first mask and of forming a second semiconductor layer of the first conductivity type over the first semiconductor layer, a sixth step of diffusing the dopant implanted in the first semiconductor layer in order to form a doped region of the second conductivity type in the first and second semiconductor layers.

Abstract: The cells of the stacked type each comprise a MOS transistor formed in an active region of a substrate of semiconductor material and a capacitor formed above the active region; each MOS transistor has a first and a second conductive region and a control electrode and each capacitor has a first and a second plate separated by a dielectric region material, for example, ferroelectric one. The first conductive region of each MOS transistor is connected to the first plate of a respective capacitor, the second conductive region of each MOS transistor is connected to a respective bit line, the control electrode of each MOS transistor is connected to a respective word line, the second plate of each capacitor is connected to a respective plate line. The plate lines run perpendicular to the bit line and parallel to the word lines. At least two cells adjacent in a parallel direction to the bit lines share the same dielectric region material.

Abstract: A signature generator circuit is provided for generating a signature word relating to a plurality of words. The signature generator circuit includes a logic gate that receives the plurality of words in series at one input, and a shift register that has a data input, a clock input, and a register output. The clock input receives a clock signal that sets the rate of the plurality of words, the data input is coupled to the output of the logic gate, and the register output is coupled to another input of the logic gate. In a preferred embodiment, the shift register also has a parallel output for outputting the contents of the shift register. Also provided is a method for generating a signature relating to a plurality of words using a logic gate and a shift register. The contents of the shift register are reset. One of the words is supplied in series to the logic gate, at least one of the bits in the shift register is also supplied to the logic gate, and the output of the logic gate is stored in the shift register.

Abstract: Metal taps for bus conductors are formed within an active layer, within one or more of the metallization levels, on the active side of a substrate in the area of a bus via. Alignment marks are formed in the same metallization level, in the same area. A slot is then blind etched from the backside of the substrate, exposing the metal taps and the alignment marks. The slot is etched, using an oxide or nitride hard mask, into the backside surface of the substrate with significantly sloped sidewalls, allowing metal to be deposited and patterned on the backside. An insulating layer and deposited metal on the backside surface of the substrate may require a blind etch to expose alignment marks, if any, but front-to-back alignment precision utilizing the exposed alignment marks may permit much smaller design rules for both the metal tabs and the backside interconnects formed from the metal layer. Backside contact pads may also be formed from the metal layer.

Abstract: The high speed multiplier takes advantage of results from previous calculations by recognizing that in many cases the multiplicand between a first and second multiplication differs only slightly. Thus, the present system divides the multiplicand into a cache lookup bit (CLB) and a table lookup bit (TLB). The results of a first multiplication are stored in a cache. The CLB of a of the multiplicand in the second multiplication is then compared to the CLB of the multiplicand in the second multiplication. If the CLB matches, the product of the first multiplication is retrieved. The product of the TLB of the multiplicand and the multiplier is then retrieved from a lookup table and either added or subtracted from the retrieved product.

Abstract: An active precision termination of the type incorporated in a voltage regulator for feeding the lines of an external bus is presented. Each termination includes a matching impedance connected in series to a switch formed by a MOS transistor, including a cell formed by a plurality of circuit branches provided in parallel and coupled to a unique output terminal. Each branch includes an input coupled to the series of the impedance and of the switch and receiving a control voltage signal. The body terminal of each MOS transistor receives a corresponding control signal via an inverter, whereas the control terminal of each MOS transistor receives a corresponding control voltage signal.

Abstract: A circuit for use in a system comprising a plurality of modules connected to an interconnect, said modules being arranged to put information onto said interconnect, said circuit comprising circuitry for determining if information on the interconnect satisfies one or more conditions; and circuitry for storing at least part of the information which satisfies the one or more conditions.

Abstract: A memory device with a test mode control circuit for entering a test mode responsive to a high on the Vss pin or a low on the Vcc pin that supply power to the output pins during normal operation of the memory device. In test mode the wordlines and bitlines of the memory remain active from the time they are activated, typically when the clock switched from a first to a second logic state, until the clock switches back to the first logic state.

Abstract: A method is provided for forming an improved contact opening of a semiconductor integrated circuit, and an integrated circuit formed according to the same. Planarization of the semiconductor structure is maximized and misalignment of contact openings is tolerated by first forming a conductive structure over a portion of a first body. A thin dielectric layer is formed at least partially over the conductive structure. A thick film, having a high etch selectivity to the thin dielectric layer, is formed over the dielectric layer. The thick film is patterned and etched to form a stack substantially over the conductive structure. An insulation layer is formed over the thin dielectric layer and the stack wherein the stack has a relatively high etch selectivity to the insulation layer. The insulation layer is etched back to expose an upper surface of the stack.