Abstract: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Abstract: The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.

Abstract: A chucking device includes a turntable fixed to a shaft having a central axis and a cone arranged axially above the turntable. An annular yoke is arranged above a sliding portion of the cone and fixed to the shaft, and a clamp magnet is fixed to the yoke through an adhesive agent. The yoke includes an upper surface having an annular recess defined in a concentric relationship with the central axis, the adhesive agent being applied on a region of the upper surface existing radially inwards of the recess. The recess includes a radial outer wall parallel to the central axis and a radial inner wall inclined radially inwards and axially upwards. The angle between the radial outer wall and a lower surface of the clamp magnet is greater than the angle between the radial inner wall and the lower surface of the clamp magnet.

Abstract: A nonaqueous electrolyte secondary battery includes a positive electrode plate, a negative electrode plate, a separator, and a nonaqueous electrolytic solution. The separator is constituted of a polyolefin microporous membrane constituted of two or more layers of stacked film containing polyethylene and polypropylene, one or both of the surface layers has a polypropylene mixture proportion exceeding 50% by mass and contains inorganic particles, and the nonaqueous electrolytic solution contains a dinitrile compound expressed by CN—(CH2)n—CN (where n?1 and n is an integer). Thus, the nonaqueous electrolyte secondary battery that even when stored at high temperature in a charged state is not prone to positive electrode degradation and has a large post-high temperature storage capacity recovery rate and good cycling characteristics can be provided.

Abstract: There is provide a printer having a rotational driving mechanism in which a print sheet can be fed in both of forward and reverse directions and a platen can be securely supported without dropping off from a head holder. The printer contains a head unit 4, a platen 20 that is freely rotatably mounted on the head unit 4 to support a print sheet and feed a print sheet through rotation, and a print head 53 for performing print on the print sheet supported by the platen 20. The head unit 4 has support grooves 10 for supporting the rotational shaft 21 of the platen 20, and a rotational driving mechanism 30 having plural gears for transmitting the rotational driving force of a driving motor 40 to a platen-side gear 22. The rotational driving mechanism 30 contains a gear 33 at the end side and two planetary gears 36 and 37.

Abstract: A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier.

Abstract: A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.

Abstract: A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.

Abstract: In an apparatus for detecting condition of load connected to a general-purpose internal combustion engine, a first threshold value is compared with a sum obtained by adding a predetermined value to a detected throttle opening and changes the threshold value to the sum if the first threshold value is less than the sum and the engine is determined to be under first load condition if the throttle opening exceeds the threshold value. Next a second threshold value is compared with a difference obtained by subtracting change amounts of the engine speed and throttle opening and the engine is determined to be under second load condition if the difference exceeds the second threshold value, thereby enabling to accurately detect a condition of a load connected to the engine. Then the desired engine speed is changed in response to results of the determinations.

Abstract: A dithiane derivative, having a structure expressed by the following general formula 1: where R1 is —H, or —CH3, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.

Abstract: The invention provides a method of obtaining a compatible resin blend from at least two incompatible resins which are not conventionally blended with each other. The blend of an incompatible resins is dissolved at a molecular level by being melted and sheared under a high shearing rate by rotating a screw without adding a compatibilizer or the like.

Abstract: A start timing instructing device includes a sensor attachable to the body of a player to detect changes in angle and/or acceleration associated with a backswing movement of the player. A variable resistor sets a start timing associated with a predetermined angle and/or acceleration data and has a volume by which the set start timing is adjustable. A microprocessor calculates an angle and/or acceleration data of the backswing movement based on the detected angle and/or acceleration and generates a start timing instruction if the calculated angle and/or acceleration data meet the angle and/or acceleration data which have been set and adjusted through the variable resistor and the volume. The microprocessor controls a stimulator attached to the body of the player to generate a vibration, sound or electric stimulation upon receiving the start timing instruction so as to inform the player of the body start timing for the downswing.

Abstract: An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

Abstract: An FSK modulator 20 applies FSK modulation processing to an RF wave supplied from an RF wave oscillator 22, by means of frequency shift keying (FSK) based on a periodical signal sequence supplied from a pattern generator 24, to thereby generate an FSK continuous wave. The continuous wave output from the FSK modulator 20 is delayed in delay circuits 26I and 26Q and is then supplied, as a reference signal, to each of mixers of a receiving mixer 30. Each of the delay circuits 26I and 26Q delays the continuous wave by a delay amount in accordance with a depth of a target position and outputs a delayed reference signal. Thus, demodulation processing is performed with a correlation between a reception signal from the target position and the reference signal being enhanced, and Doppler information from the target position is selectively extracted by a Doppler information analyzing unit 44.

Abstract: An apparatus for jointing of cord fabric performed when cord fabric for topping is alternately drawn from two supply positions for continuous supply. When drawing to supply of the cord fabric on one side, a start end portion of the cord fabric on other side is locked to hold by a locking pin of a jointing holder, and is set to a jointing mounting portion in a state where an unvulcanized jointing rubber member is pasted thereto. When a final end of the cord fabric on the one side comes closer, a finish end portion thereof is pasted to the start end portion of the cord fabric held by the holder by interposing the rubber member therebetween. The finish end portion and the start end portion are squeezed for joint from upper and lower sides by press members. Thereafter, the holder is removed, and the cord fabric on the other side is drawn to supply continuously to the cord fabric on the one side.

Abstract: An SV reduction method for multi-class SVMs is provided with which a number of SVs contained in the multi-class SVMs can be reduced without becoming trapped in a local minimum optimization solution and the reduction of the SVs can be performed at high precision and high speed. The method includes a step of selecting, from a plurality of initially present support vectors, support vector pairs zi, zj (i, j=1, 2, . . . , NS); a step of preparing a single-variable objective function with a single global maximum and determining a maximum value k of the objective function; and a step of applying the maximum value k to the support vector pairs zi and zj to determine a temporary vector Ztemp[i] of small classification errors; and the support vector pairs zi, zj are represented by the temporary vector Ztemp[i].

Abstract: The solid electrolytic capacitor includes a solid electrolyte type capacitor element including a dielectric layer intervening between an anode section and a cathode section, and an insulating substrate. The insulating substrate includes a first surface on which the capacitor element is mounted and a second surface opposite to the first surface. The first surface is provided thereon with a first anode layer to which the anode section is electrically connected and a first cathode layer to which the cathode section is electrically connected. The second surface is provided thereon with a second anode layer electrically connected to the first anode layer and a second cathode layer electrically connected to the first cathode layer. Here, a pad member with electrical insulation property projects on the first surface of the insulating substrate, and the first anode layer is formed on a tip end surface of the pad member.

Abstract: A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

Abstract: The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.