Abstract: A method of contact printing on a device using a partially transparent mask (18) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (22) to the first surface of the mask; placing the first surface (24) of the mask contiguous to the device (10), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (32) to the second surface of the mask for affecting a pattern in the device.

Abstract: A field emission display (100) includes a cathode plate (104) having a plurality of electron emitters (112), ballast resistors (118), an anode plate (120) having an anode (124), and a scan mode control circuit (130). The scan mode control circuit (130) is coupled to a video control circuit (160) via a scan mode switching circuit (150). The scan mode control circuit (130) cooperates with the scan mode switching circuit (150) and the video control circuit (160) to automatically switch between a single scan mode of operation and a multi-scan mode of operation.

Abstract: A multilayer ceramic micropump including a monolithic ceramic package formed of a plurality of ceramic layers defining therein an integrated first ball check valve, and a second ball check valve in microfluidic communication with the first ball check valve, and an actuator characterized as actuating a pumping motion, thereby pumping fluids through the first ball check valve and the second ball check valve.

Abstract: A multilayer ceramic device (100) includes a plurality of dielectric layers (104A-G) separated by ground planes (114) and includes a plurality transmission line segments (118) in generally folded configuration for defining a tapered transmission line (102). The profile of the transmission line may vary and includes such profiles as embodied in the depicted lines (200, 206, 212).

Abstract: An MTJ cell including an insulator layer of material between magnetic material layers with the insulator layer of material having a greater attraction for a third material than the magnetic material layers. The third material is introduced to one or both so that when the cell is heated the third material is redistributed from the magnetic material layer to the insulator layer. Upon redistribution the insulator layer becomes an insulator layer material. Also, a first diffusion barrier layer is positioned between a first metal electrode and one of the magnetic material layers and/or a second diffusion barrier layer is positioned between a second metal electrode and the other magnetic material layer to prevent diffusion of the metal in the electrodes into the magnetic material layers.

Abstract: A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.

Abstract: Method and structure for reducing crosstalk between adjacent column conductors in a field emission display (50) that has a plurality of column conductors (57, 59) on which electron emission structures (64) are disposed. The field emission display (50) also includes a plurality of row conductors (67, 68). A field termination structure (58) is formed between adjacent column conductors. The field termination structure (58) attenuates a voltage glitch created by a switching column conductor, thereby preventing the voltage glitch from affecting adjacent nonswitching column conductors.

Abstract: A scalable magnetoresistive tunneling junction memory cell comprising a fixed ferromagnetic region having a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an electrically insulating material positioned on the fixed ferromagnetic region to form a magnetoresistive tunneling junction, and a free ferromagnetic region having a magnetic moment vector oriented in a position parallel or anti-parallel to that of the fixed ferromagnetic region. The free ferromagnetic region includes N ferromagnetic layers that are anti-ferromagnetically coupled, where N is an integer greater than or equal to two. The number N of ferromagnetic layers can be adjusted to increase the effective magnetic switching volume of the MRAM device.

Abstract: A magneto-electronic component includes a first current line (120, 520, 620, 820) for generating a first magnetic field, a magnetic memory cell (140, 540, 640, 740, 840), and a second current line (170, 470) for generating a second magnetic field and substantially perpendicular to the first current line. The magnetic memory cell includes a multi-state memory layer having a structure adjacent to the first current line such that a magnetic flux emanating from the multi-state memory layer is substantially confined to wrap around the first current line. The second current line is located adjacent to a portion of the multi-state memory layer.

Abstract: A method of fabricating a MRAM device with a taper comprising the steps of providing a substrate, forming a dielectric region with positioned on the substrate, patterning and isotropically etching through the dielectric region to the substrate to form a trench, depositing the MRAM device within the trench wherein the MRAM device includes a first ferromagnetic region with a width positioned on the substrate, a non-ferromagnetic spacer layer with a width positioned on the first ferromagnetic region, and a second ferromagnetic region with a width positioned on the non-ferromagnetic spacer layer wherein the taper is formed by making the width of the first ferromagnetic region greater than the width of the non-ferromagnetic spacer layer, and the width of the non-ferromagnetic spacer layer greater than the width of the second ferromagnetic region so that the first ferromagnetic region is separated from the second ferromagnetic region.

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (20, 30, 42) is formed having a substrate (22, 32) and a template pedestal (24, 34) having formed thereon an uppermost surface an etched pattern or relief image (26, 36, 48). The template (20, 30, 42) is used in the fabrication of a semiconductor device (44) for affecting a pattern in the device (44) by positioning the template (20, 30, 42) in close proximity to semiconductor device (44) having a radiation sensitive material (50) formed thereon and applying a pressure (52) to cause the radiation sensitive material (50) to flow into the relief image (48) present on the template (42).

Abstract: A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on the second magnetic layer (46), which is configured to alter a switching energy barrier of the second magnetic layer (46).

Abstract: A non-volatile, bistable magnetic tunnel junction (MTJ) register cell includes first and second magnetic tunnel junctions connected for differential operation. The first MTJ is coupled between an easy axis line and an output terminal and the second MTJ is coupled between an inverse easy axis line and an inverse output terminal. A hard axis line is coupled magnetically to the MTJs and an enable line is coupled to the MTJs for enabling and disabling the differential operation. The MTJ register cell can be connected as a PIPO non-volatile register, a right or left non-volatile shift register, or a multi-bit bi-directional non-volatile shift register.

Abstract: A magnetoresistive random access memory architecture free of isolation devices includes a plurality of data columns of non-volatile magnetoresistive elements. A reference column includes non-volatile magnetoresistive elements positioned adjacent to the data column. Each column is connected to a current conveyor. A selected data current conveyor and the reference current conveyor are connected to inputs of a differential amplifier for differentially comparing a data voltage to a reference voltage. The current conveyors are connected directly to the ends of the data and reference bitlines. This specific arrangement allows the current conveyors to be clamped to the same voltage which reduces or removes sneak circuits to substantially reduce leakage currents.

Abstract: An electrically active antenna apparatus comprising a substrate, a RF feed positioned on the substrate, a radiator element positioned on the substrate and adjacent to the RF feed such that the radiator element and the RF feed are electromagnetically coupled, and a plurality of active devices that make electrical contact with the radiator element. The plurality of active devices are biased to actively tune the resonance frequency of the radiator element.

Abstract: A polymer electrolyte membrane comprised of a hydrophobic hydrocarbon region, a hydrophilic region containing covalently bound acid functional groups and protic functional groups. The hydrophobic hydrocarbon region and the hydrophilic region are covalently bound to form a single polymer molecule.

Abstract: A conductive line for programming a magnetoresistive memory element comprising N metal layers separated by an electrically insulator layer, wherein the bit conductive is positioned proximate to a magnetoresistive memory device and flows a current that induces a magnetic field for programming the magnetoresistive memory device. The current needed to induce a given magnetic field is reduced by a factor of N, wherein N is a whole number greater than or equal to two. To further decrease the current, the conductive line is cladded with a ferromagnetic region to increase the magnetic field proximate to the magnetoresistive random access memory device.

Abstract: A fuel cell device and method of forming the fuel cell device including a base portion, formed of a singular body, and having a major surface. At least one fuel cell membrane electrode assembly is formed on the major surface of the base portion. A fluid supply channel including a mixing chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for supplying a fuel-bearing fluid to the membrane electrode assembly. An exhaust channel is defined in the base portion and communicating with the membrane electrode. A multi-dimensional fuel flow field is defined in the multi-layer base portion and in communication with the fluid supply channel, the membrane electrode assembly and the exhaust channel.

Abstract: A laser cleaning process is disclosed for cleaning the surface of materials, such as semiconductor wafers and the like, which process can be performed at atmospheric pressure. The process includes the steps of providing a structure with a surface having undesirable contaminant particles thereon, wetting the surface with a liquid including reactive or non-reactive liquids, and irradiating the surface using photon energy with sufficient energy to remove the wetting liquid and the undesirable material.

Abstract: Readout circuitry for a magnetic tunneling junction (MTJ) memory cell, or an array of MTJ memory cells, is disclosed which requires a varying reference voltage equal to (Vbias1/2)(1+Rmin/Rmax), where Vbias1 is a clamping voltage applied to the readout circuitry, Rmin is a minimum resistance of the magnetic tunneling junction memory cell, and Rmax is a maximum resistance of the magnetic tunneling junction memory cell. A reference voltage generator is disclosed which generates the reference voltage and includes an operational amplifier and two MTJ memory cells connected to provide an output signal equal to (Vbias1/2)(1+Rmin/Rmax).