Abstract: In sophisticated transistor elements, long-term threshold voltage shifts in transistors comprising a threshold adjusting semiconductor alloy may be reduced by reducing the roughness of an interface formed between the threshold adjusting semiconductor material and the gate dielectric material. To this end, a portion of the threshold adjusting semiconductor material may be oxidized and may be removed prior to forming the high-k dielectric material.

Abstract: In sophisticated transistor elements, enhanced profile uniformity along the transistor width direction may be accomplished by using a gate material in an amorphous state, thereby reducing channeling effects and line edge roughness. In sophisticated high-k metal gate approaches, an appropriate sequence may be applied to avoid a change of the amorphous state prior to performing the critical implantation processes for forming drain and source extension regions and halo regions.

Abstract: A method, apparatus, and a system for generating a binary mapping of wafer regions using measured value. A first measured value relating to processing a first workpiece is acquired. A second measured value relating to a second workpiece is acquired. At least a first region common to the first and second workpieces is defined. A determination is made as to whether the results associated with the first or second measured value is above a predetermined threshold. A first binary value is assigned to the first region based upon a determination that the results associated the first or second measured value data is above the threshold.

Abstract: In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.

Abstract: A screen assembly having a support, the support made of composite material, and at least one layer of screening material on the support, the support having openings that are larger at the top than at the bottom (or vice versa) and/or with a base member or member extending across the bottom of the support.

Abstract: The present invention provides a method involving a femtocell in communication with a secure core network such as an Internet Protocol Multimedia Subsystem (IMS) network. The method includes receiving, from the femtocell and at a first secure entity in the IMS network, a global challenge including information indicating a random number. The method also includes receiving an authentication response computed by a mobile unit based on the random number and the first key known by the mobile unit and not known by the femtocell. The method further includes determining, at the first secure entity, that the random number is a legitimate random number provided to the femtocell by the IMS network.

Abstract: The present invention provides a method involving a mobile node, a home agent, and an authentication server in a wireless communication system. The method includes generating, at the authentication server, a first security key that indicates a secure association between the home agent and the mobile node based on a second security key that indicates a secure association between the mobile node and the authentication server. The method also includes generating, at the authentication server, at least one first index associated with the first security key. The first index is also generated by the mobile node. The method also includes storing, at the authentication server, the first index and the first security key.

Abstract: A method for extracting energy from biomass depleted of at least some carbohydrate, at least some oil, or both by a) introducing the biomass into a vertically elongated combustion chamber having i) at least one suspension burner at the top of the combustion chamber which is capable of projecting a flame down the axis of the combustion chamber, ii) a heat transfer apparatus having at least a portion of a heat collection surface located radially from the flame and below the burner, and iii) an exhaust opening located below the flame and below at least a portion of the heat collection surface; b) combusting the biomass to yield a mixture containing hot flue gas and molten ash above the exhaust opening; c) transferring heat from the hot flue gas to at least a portion of the heat collection surface substantially by radiation prior to any substantial contact of ash to a surface of the combustion chamber, to yield a mixture containing warm flue gas and non-molten ash and having a lower molten ash content than the mi

Abstract: The present invention provides a method involving a femtocell in communication with a secure core network such as an Internet Protocol Multimedia Subsystem (IMS) network. The method includes receiving, from the femtocell and at a first secure entity in the IMS network, a global challenge including information indicating a random number. The method also includes receiving an authentication response computed by a mobile unit based on the random number and the first key known by the mobile unit and not known by the femtocell. The method further includes determining, at the first secure entity, that the random number is a legitimate random number provided to the femtocell by the IMS network.

Abstract: Generally, the subject matter disclosed herein relates to a semiconductor device with embedded low-k metallization. A method is disclosed that includes forming a plurality of copper metallization layers that are coupled to a plurality of logic devices in a logic area of a semiconductor device and, after forming the plurality of copper metallization layers, forming a plurality of capacitors in a memory array of the semiconductor device. The capacitors are formed using a non-low-k dielectric material (k value greater than 3), while the copper metallization layers are formed in layers of low-k dielectric material (k value less than 3).

Abstract: By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electrical test procedure, in which respective contact portions are contacted through the protective layer, thereby significantly reducing particle contamination during a respective measurement process.

Abstract: In semiconductor devices having a copper-based metallization system, bond pads for wire bonding may be formed directly on copper surfaces, which may be covered by an appropriately designed protection layer to avoid unpredictable copper corrosion during the wire bond process. A thickness of the protection layer may be selected such that bonding through the layer may be accomplished, while also ensuring a desired high degree of integrity of the copper surface.

Abstract: Operation of complex integrated circuits at low temperatures may be enhanced by providing active heating elements within the integrated circuit so as to raise the temperature of at least critical circuit portions at respective operational phases, such as upon power-up. Consequently, enhanced cold temperature performance may be obtained on the basis of existing process elements in order to provide design stability without requiring extensive circuit simulation or redesign of well-established circuit architectures.

Abstract: A method, apparatus, and system for providing active contents between applications activated by a plurality of computer systems are provided. A list of one or more remote users is created. A determination is made whether a first application and a second application are being executed by the at least one or more remote users. The list is updated in response to determining a change in a status of the second application being executed by the one or more remote users using at least one communications feature associated with the first application.

Abstract: An apparatus and method for separating solids from a solids laden drilling mud (14), the method comprising the steps of introducing solids laden drilling mud to a first side of a screen (13), the drilling mud passing through the screen (13) and screened drilling mud located the other side of the screen (13) characterized in that an oscillating tray (18) is located in the drilling mud and spaced from the screen, the oscillating tray imparting motion to the drilling mud to facilitate screening of said solids laden drilling mud in the screen (13).

Abstract: Methods and systems are disclosed for treating a drilling fluid mixture including feeding the drilling fluid mixture to a hydrocyclone (or hydrocyclones) with a flow-volume-adjustable inlet for controlling flow of the drilling fluid mixture into the hydrocyclone(s). This abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).

Abstract: In a replacement gate approach for forming high-k metal gate electrodes in semiconductor devices, a tapered configuration of the gate openings may be accomplished by using a tensile stressed dielectric material provided laterally adjacent to the gate electrode structure. Consequently, superior deposition conditions may be achieved while the tensile stress component may be efficiently used for the strain engineering in one type of transistor. Furthermore, an additional compressively stressed dielectric material may be applied after providing the replacement gate electrode structures.

Abstract: A spacer structure in sophisticated semiconductor devices is formed on the basis of a high-k dielectric material, which provides superior etch resistivity compared to conventionally used silicon dioxide liners. Consequently, a reduced thickness of the etch stop material may nevertheless provide superior etch resistivity, thereby reducing negative effects, such as dopant loss in the drain and source extension regions, creating a pronounced surface topography and the like, as are typically associated with conventional spacer material systems.

Abstract: A gate electrode structure of a transistor may be formed so as to exhibit a high crystalline quality at the interface formed with a gate dielectric material, while upper portions of the gate electrode may have an inferior crystalline quality. In a later manufacturing stage after implementing one or more strain-inducing mechanisms, the gate electrode may be re-crystallized, thereby providing increased stress transfer efficiency, which in turn results in an enhanced transistor performance.

Abstract: The present invention provides a method including providing at least one route update message based upon at least one sector list associated with an access terminal. The sector lists are formed based on information collected by the access terminal.