Abstract: Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, etching recesses into the substrate using the gate electrode as an etch mask, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.

Abstract: A strain-inducing semiconductor alloy may be formed on the basis of cavities which may have a non-rectangular shape, which may be maintained even during corresponding high temperature treatments by providing an appropriate protection layer, such as a silicon dioxide material. Consequently, a lateral offset of the strain-inducing semiconductor material may be reduced, while nevertheless providing a sufficient thickness of corresponding offset spacers during the cavity etch process, thereby preserving gate electrode integrity. For instance, P-channel transistors may have a silicon/germanium alloy with a hexagonal shape, thereby significantly enhancing the overall strain transfer efficiency.

Abstract: A compound logic flip-flop. The flip-flop includes a plurality of input stages, wherein each of the input stages is coupled to receive at least one input signal and a clock signal. Each of the plurality of input (i.e. ‘master’) stages is configured to perform a corresponding input logic function during a first phase of a clock cycle and to store a result of the corresponding input logic function. The flip-flop further includes an output (i.e. ‘slave’) stage coupled to receive the clock signal and the results of the input logic functions from each of the plurality of input stages. The output stage is configured, during a second phase of the clock cycle, to logically combine the results of the input logic functions by performing an output logic function and provide an output signal based on a result of the output logic function.

Abstract: According to one exemplary embodiment, a method for determining a power spectral density of an edge of at least one patterned feature situated over a semiconductor wafer includes measuring the edge of the at least one patterned feature at a number of points on the edge. The method further includes determining an autoregressive estimation of the edge of the at least one patterned feature using measured data corresponding to a number of points on the edge. The method further includes determining a power spectral density of the edge using autoregressive coefficients from the autoregressive estimation. The method further includes utilizing the power spectral density to characterize line edge roughness of the at least one patterned feature in a frequency domain.

Abstract: A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used in the contact level of sophisticated integrated circuits, thereby providing high strain levels while not unduly contributing to signal propagation delay.

Abstract: Disclosed are methods and systems for granting an application-specific integrated circuit (ASIC) in a multi-ASIC environment controlled access to a shared resource. A system includes a first ASIC, a second ASIC, and a shared memory that stores a shared resource and a data set partitioned into fields. The first ASIC writes data to a first subset of the fields and reads data from the fields. The first ASIC includes first logic that computes a first value based on the data read from the fields. The second ASIC writes data to a second subset of the fields and reads data from the fields. The second ASIC includes second logic that computes a second value based on the data read from the fields. Based on the first and second values respectively computed by the first and second logic, only one of the first and second ASICs gains access to the shared resource.

Abstract: Disclosed are methods and systems for granting an application-specific integrated circuit (ASIC) in a multi-ASIC environment controlled access to a shared resource. A system includes a first ASIC, a second ASIC, and a shared memory that stores a shared resource and a data set partitioned into fields. The first ASIC writes data to a first subset of the fields and reads data from the fields. The first ASIC includes first logic that computes a first value based on the data read from the fields. The second ASIC writes data to a second subset of the fields and reads data from the fields. The second ASIC includes second logic that computes a second value based on the data read from the fields. Based on the first and second values respectively computed by the first and second logic, only one of the first and second ASICs gains access to the shared resource.

Abstract: A method for delayed memory access request arbitration includes dispatching a first memory access request to a memory controller and dispatching a second memory access request to the memory controller in response to an anticipated completion of a memory access operation represented by the first memory access request. Another method includes receiving a first memory access request at a bus interface unit at a first time, dispatching a second memory access request to a memory controller at a second time subsequent to the first time, receiving a third memory access request at the bus interface unit at a third time subsequent to the second time, dispatching the third memory access request to the memory controller at a fourth time subsequent to the third time and dispatching the first memory access request to the memory controller at a fifth time subsequent to the fourth time.

Abstract: In one disclosed embodiment, the present method for determining a gate-to-body current for a floating body FET comprises measuring at least three unique gate-to-body currents corresponding to at least three unique body-tied FET structures, determining at least three unique relationships between the at least three unique gate-to-body currents and at least three gate-to-body current density components for the at least three unique body-tied FET structures, and utilizing those at least three unique relationships to determine the at least three gate-to-body current density components; wherein one of the gate-to-body current density components is used to determine the gate-to-body current for the floating body FET. In one embodiment, a test structure implements a method for determining a gate-to-body current in a floating body FET. The determined gate-to-body current may be used to predict hysteresis in the floating body FET.

Abstract: A high yield plasma etch process for an interlayer dielectric layer of a semiconductor device is provided, according to an embodiment of which a dielectric layer is etched with a nitrogen-containing plasma. In this way, the formation of polymers on a backside bevel of a substrate is avoided or substantially reduced. Remaining polymer at the backside bevel can be removed in situ by post-etch treatment. Further, a plasma etching device is provided comprising a chamber, a substrate receiving space for receiving a substrate, a plasma generator for generating a plasma in the chamber and a temperature conditioner for conditioning a temperature at an outer circumferential region of the substrate receiving space and thereby minimizing temperature gradients at a bevel of the wafer.

Abstract: A multi-core microprocessor provides an indication of the power management state of each of the cores on output terminals. Cooling of the cores is adjusted responsive to the indication of the power management state of the respective cores with additional cooling being provided to those cores in a more active state and less cooling provided to those cores in a less active state.

Abstract: A method and apparatus for dynamic allocation of processing resources and tasks, including multimedia tasks. Tasks are queued, available processing resources are identified, and the available processing resources are allocated among the tasks. The available processing resources are provided with functional programs corresponding to the tasks. The tasks are performed using available processing resources to produce resulting data, and the resulting data is passed to an input/output device.

Abstract: A method comprises providing a semiconductor structure. The semiconductor structure comprises a feature comprising a first material and a layer of a second material formed over the feature. The semiconductor structure is exposed to an etchant. The etchant is adapted to selectively remove the first material, leaving the second material substantially intact. After exposing the semiconductor structure to the etchant, it is detected whether the feature has been affected by the etchant.

Abstract: By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.

Abstract: Embodiments of a method for detecting potential areas of inductive coupling in a high density integrated circuit design are described. The inductance mitigation process first converts the inductive analysis into a density problem. The density of wires within a region that may switch within a portion of the system clock are compared to the density of wires will not switch within that same time. Regions of the chip that have a high ratio of density of switching wires versus non-switching wires are determined to have the potential of an inductive coupling problem. Additional grounded metal is added into the problematic regions of the chip to improve the switching versus non-switching wire density.

Abstract: By forming an appropriate material layer, such as a metal-containing material, on a appropriate substrate and patterning the material layer to obtain a cantilever portion and a tip portion, a specifically designed nano-probe may be provided. In some illustrative aspects, additionally, a three-dimensional template structure may be provided prior to the deposition of the probe material, thereby enabling the definition of sophisticated tip portions on the basis of lithography, wherein, alternatively or additionally, other material removal processes with high spatial resolution, such as FIB techniques, may be used for defining nano-probes, which may be used for electric interaction, highly resolved temperature measurements and the like. Thus, sophisticated measurement techniques may be established for advanced thermal scanning, strain measurement techniques and the like, in which a thermal and/or electrical interaction with the surface under consideration is required.

Abstract: Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by forming a protective layer between the gate oxide layer and metal gate electrode, thereby reducing stress. Embodiments include forming a protective layer of amorphous carbon containing metal carbides decreasing in concentration from the metal gate electrode toward the gate oxide layer across the protective layer. Embodiments of methodology include removing the removable gate, depositing a layer of amorphous carbon on the gate oxide layer, forming the metal gate electrode and then heating at an elevated temperature to diffuse metal from the metal gate electrode into the amorphous carbon layer, thereby forming the metal carbides. Embodiments also include metal gate transistors with a gate oxide layer having a high dielectric constant and silicon concentrated at the interfaces with the metal gate electrode and substrate.

Abstract: A PFET having tailored dielectric constituted in part by an NFET threshold voltage (Vt) work function tuning layer in a gate stack thereof, related methods and integrated circuit are disclosed. In one embodiment, the PFET includes an n-type doped silicon well (N-well), a gate stack including: a doped band engineered PFET threshold voltage (Vt) work function tuning layer over the N-well; a tailored dielectric layer over the doped band engineered PFET Vt work function tuning layer, the tailored dielectric layer constituted by a high dielectric constant layer over the doped band engineered PFET Vt work function tuning layer and an n-type field effect transistor (NFET) threshold voltage (Vt) work function tuning layer over the high dielectric constant layer; and a metal over the NFET Vt work function tuning layer.

Abstract: In one embodiment, a system comprises a processor, a first interrupt controller coupled to the processor, and a second interrupt controller coupled to the processor. The first interrupt controller is configured to signal the processor for an interrupt in response to receiving a first interrupt message communicating a first interrupt that is targeted at a host in the system. The second interrupt controller is configured to signal the processor for an interrupt in response to receiving a second interrupt message communicating a second interrupt that is targeted at a guest that is controlled by the host and that is executable on the processor.