Abstract: An LED lamp includes a supporting base and a reflector having a plurality of reflecting tabs mounted thereon. The reflector includes many circumferentially arranged tabs around a central axis of the supporting base. Many LED light sources are mounted in the supporting base and divided into an outer array and an inner array. Each reflecting tab has a fixed end connected to the supporting base and a free end distant from the supporting base. Each reflecting tab extends upwardly and outwardly from a central portion of the supporting base toward an outer periphery thereof. The inner array of the LED light sources is surrounded by the reflector. A hole is defined in a free end of each reflecting tab and aligned with one of the LED light sources of the outer array. A lamp mounting base is also provided.

Abstract: An LED light emitting apparatus includes an LED light source, a light guiding device and an emitting window. The emitting window is covered with a phosphor layer. Light emitted directly from the LED light source is first transmitted to the light guiding device and then guided by the light guiding device towards the emitting window to evenly excite the phosphor layer.

Abstract: A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN.

Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

Abstract: An LED light source device includes a printed circuit board (PCB) and a plurality of LED light sources located on the PCB and electrically connected with the PCB. The plurality of LED light sources are arranged symmetrically relative to a center point of the PCB, and a distance between every adjacent two LED light sources decreases along a direction away from the center point of the PCB. An optical lens is located over the LED light sources for diverging light from a central one of the LED light sources.

Abstract: An LED package includes a substrate, a buffer layer formed on the substrate, an epitaxial structure formed on the buffer layer, and a plurality of carbon nanotube bundles formed in the epitaxial structure.

Abstract: A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, a first electrode penetrating downward through the substrate, a second electrode penetrating downward through the substrate and spaced from the first electrode, an LED die arranged on the substrate and mounted to the first and second electrodes by flip-chip technology, and an encapsulation layer formed on the substrate to encapsulate the LED die therein. The substrate includes a top surface and a bottom surface at opposite sides thereof. Top ends of the first and second electrodes are exposed at the top surface of the substrate, and bottom ends of the first and second electrodes are exposed at the bottom surface of the substrate. A moisture barrier layer is attached on the bottom of the LED package to cover a joint of the first and/or second electrode and the substrate.

Abstract: An LED lamp includes an envelope, a circuit board, a plurality of LEDs, a lamp body and a lamp holder. The LEDs are arranged on the circuit board. The envelope covers the LEDs. The lamp body is connected between the envelope and the lamp holder. The lamp body includes a first chamber and a second chamber. The lamp body defines therein a plurality of first channels and a second channels. The first channels are defined adjacent to the envelope. The second channels are defined in the vicinity of the lamp holder.

Abstract: A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer.

Abstract: A method for manufacturing a light emitting diode includes providing an epitaxial wafer having a substrate and an epitaxial layer allocated on the substrate. The epitaxial layer comprises a first semiconductor layer, an active layer, a second semiconductor layer sequentially allocated, and at least one blind hole penetrating the second semiconductor layer, the active layer and inside the first semiconductor layer; then a first electrode is formed on the first semiconductor layer inside the at least one blind hole and a second electrode is formed on the second semiconductor layer; thereafter a first supporting layer is allocated on the first electrode and a second supporting layer is allocated on the second electrode.

Abstract: A light emitting diode (LED) package includes a substrate, a first electrode and a second electrode embedded in the substrate and spaced from each other, an LED die mounted on a top surface of the substrate and electrically connected to the first and the second electrodes. Both the first and the second electrodes include a top face and a bottom face, with the top face and the bottom face of each of the first and the second electrodes being exposed at the top surface and a bottom surface of the substrate, respectively. The top face of the first electrode defines a first groove corresponding to a positive bonding pad (p-pad) of the LED die. The p-pad is partially inserted into the first groove. An oxidation-resistant metal coating layer is filled between an insertion portion of the p-pad and an inner surface of the first groove.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, a first electrode and a second electrode embedded in the substrate and spaced from each other, and an LED die mounted on a top surface of the substrate. The substrate also includes a bottom surface. Top ends of the first and second electrodes are exposed at the top surface of the substrate, and bottom ends of the first and second electrodes are exposed at the bottom surface of the substrate. An oxidation-resistant metal coating layer is formed on a top face of each of the first and second electrodes. The LED die is electrically connected to the first and second electrodes via the two oxidation-resistant metal coating layers.

Abstract: An exemplary light-emitting diode (LED) package includes an electrically insulating substrate, an electrode structure embedded in the insulating substrate, and a plurality of LED chips electrically connecting with electrodes of the electrode structure respectively. The electrode structure includes a first electrode, a second electrode and a third electrode located between the first and second electrodes. Top surfaces of the first, second and third electrodes are exposed out of a top surface of the insulating substrate to support the LED chips. Front side and rear side faces of the first and second electrodes are exposed out of a front side face and a rear side face of the substrate whereby the front or rear side faces of the first and second electrodes can connect with welding pads of a printed circuit board. Circumferential side faces of the third electrode are encapsulated in the substrate.

Abstract: A backlight module includes a substrate, a plurality of LED packages mounted on the substrate and a light diffusion board located above the LED packages. The light diffusion board includes a light incident surface facing toward the LED packages and a light output surface. A plurality of light-guiding portions is configured extending from the incident surface of the light diffusion board toward the LED package. Each light-guiding portion comprises a concave surface at an outer periphery thereof. A diameter of each light-guiding portion decreases gradually from light diffusion board toward the LED packages. The concave surface of each light-guiding portion is recessed inwardly from the outer periphery of the light-guiding portion. Light from the LED packages and emitting into the light-guiding potions is divergently and uniformly adjusted into the light diffusion board by the concave surfaces of the light-guiding portions.

Abstract: A method for manufacturing an LED (light emitting diode) package comprises following steps: providing an electrically insulated base, the base having a first surface and a second surface opposite thereto; an annular voltage stabilizing module is formed on the first surface; a first electrode is formed on the first surface, wherein the first electrode is attached to and encircled by the voltage stabilizing module; a second electrode is formed on the first surface, wherein the second electrode is attached to and encircles the voltage stabilizing module; an LED chip is mounted on the first electrode, wherein the LED chip is electrically connected to the first and second electrodes, and the LED chip and the voltage stabilizing module are connected in reverse parallel. Finally, an encapsulative layer is brought to encapsulate the LED chip.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: A light emitting diode (LED) package includes a substrate, a first electrode, a second electrode, an LED die mounted on the substrate and electrically connected to the first and the second electrodes, and an encapsulation layer encapsulating the LED die. Both the first and the second electrodes are embedded in the substrate and spaced from each other. Each of the first and the second electrodes includes a top face and a bottom face, with the top face and the bottom face thereof being exposed at a top surface and a bottom surface of the substrate, respectively. The top face of the first electrode defines a first groove therein. An oxidation-resistant metal coating layer is filled in the first groove. A positive bonding pad of the LED die directly contacts with a top face of the first oxidation-resistant metal coating layer.

Abstract: A method for packaging an LED includes steps: providing a substrate with a circuit structure formed thereon, stacking the substrate on a supporting board, and arranging a plurality of LED dies on the substrate; providing a mold and a gelatinous-state fluorescent film, positioning the supporting board in the mold and covering the mold with the gelatinous-state fluorescent film to cooperatively define a receiving space among the fluorescent film, the mold and the supporting board, the substrate and the LED dies being received in the receiving space; exhausting air in the receiving space to attach the gelatinous-state fluorescent film on the LED dies; solidifying the gelatinous-state fluorescent film and removing the mold; forming an encapsulation on the substrate to cover the LED dies; cutting the substrate and removing the supporting board to obtain several individual LED packages.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.