Patents Assigned to Advanced Technology Materials, Inc.
  • Patent number: 8882889
    Abstract: A system and method for recovering high value gas from a process stream, material or environment containing same, e.g., xenon by contacting gas from the process stream, material or environment with a carbon adsorbent effective to sorptively capture same, free of or with reduced concentration of fluid species present with the high value gas in the high value gas-containing gas in the process stream, material or environment. Other aspects of the disclosure include a radon detection method and product.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: November 11, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas H. Baum, J. Donald Carruthers, Richard Fricke, Joshua B. Sweeney, James V. McManus, Edward A. Sturm
  • Patent number: 8877549
    Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: November 4, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
  • Publication number: 20140319423
    Abstract: An improved solvent containing sulfolane and at least one dialkyl sulfone, preferably dimethyl sulfone, wherein the improved solvent is a liquid at room temperature and can be used for reaction media and electrochemistry.
    Type: Application
    Filed: March 14, 2014
    Publication date: October 30, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC
    Inventor: Emanuel I. COOPER
  • Publication number: 20140318584
    Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.
    Type: Application
    Filed: January 12, 2012
    Publication date: October 30, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Emanuel I. Cooper, Jeffrey A. Barnes
  • Publication number: 20140306162
    Abstract: A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.
    Type: Application
    Filed: June 19, 2012
    Publication date: October 16, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Sarah L. Poe, Christopher L. Paradise, Laura R. Muollo, Reshma Pal, John C. Warner, Michael B. Korzenski
  • Publication number: 20140305079
    Abstract: A method for removing headspace gas from a liner-based assembly. The liner-based assembly may generally include an overpack, a liner positioned within the overpack and containing a material and headspace gas, and a closure for sealing the liner. The method may include providing a one-way valve in fluid communication with the interior of the liner and permitting flow in a direction out of the interior of the liner, and applying a vacuum to the one-way valve to evacuate headspace gas from the interior of the liner. In some embodiments, The liner-based assembly may also include a port in fluid communication with an annular space between the overpack and liner, and the method may include capping the port, for example, during application of the vacuum to the one-way valve.
    Type: Application
    Filed: November 16, 2012
    Publication date: October 16, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Donald Ware, Alfredo Daniel Botet, Glenn M. Tom, Greg Nelson, Dale Mowrey, Jordan Hodges
  • Patent number: 8858685
    Abstract: A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter <2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, preferably from 0.9 to 2.0 grams per cubic centimeter.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: October 14, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventor: J. Donald Carruthers
  • Publication number: 20140298992
    Abstract: A carbon pyrolyzate adsorbent is described that is selective for carbon dioxide in contact with gas mixtures including carbon dioxide and methane. The adsorbent has a carbon dioxide adsorbent capacity at 1 bar pressure of greater than 50 cm3 carbon dioxide per gram of adsorbent at 273K, a methane adsorption capacity at 1 bar pressure of less than 35 cm3 methane per gram of adsorbent at 21° C., and a bulk density of greater than 0.55 gram per cubic centimeter of volume. Such adsorbent can be utilized, for example, for biogas upgrading, natural gas purification, coal bed methane purification, and refining operations.
    Type: Application
    Filed: April 5, 2013
    Publication date: October 9, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: J. Donald Carruthers, Melissa A. Petruska, Shaun M. Wilson, Edward A. Sturm
  • Publication number: 20140295071
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Application
    Filed: June 11, 2014
    Publication date: October 2, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 8849448
    Abstract: An electronic storage device is coupled with a container capable of holding liquid for electronically storing information relating to the liquid stored in the container. The system can be configured with an antenna, for storing information to and reading information from the electronic storage device. A microprocessor-based controller, coupled with the antenna, may be employed for controlling processing of the liquid based on information read from the electronic storage device by the antenna. A connector of a secure reader system having a reader is provided to physically couple to a container having an information storing mechanism, for periodically reading information from an information storing mechanism. The connector may draw material from the container simultaneous with the reading.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: September 30, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Kevin T. O'Dougherty, Robert E. Andrews, Tripunithura V. Jayaraman, Joe Menning, Christopher A. Baye-Wallace
  • Patent number: 8821640
    Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: September 2, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
  • Publication number: 20140234436
    Abstract: A system and process for generating and packaging phosphine gas, in which the process includes: reacting water and aluminum phosphide to generate phosphine, and providing the phosphine in a gas mixture at a phosphine concentration below a lower explosive limit; adsorptively removing phosphine from the gas mixture; and packaging the removed phosphine in a fluid storage and dispensing vessel.
    Type: Application
    Filed: June 12, 2012
    Publication date: August 21, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: James V. McManus, Edward A. Sturm, Thomas H. Baum, J. Donald Carruthers, Joshua B. Sweeney
  • Patent number: 8802882
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: August 12, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20140220733
    Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
    Type: Application
    Filed: April 11, 2014
    Publication date: August 7, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
  • Patent number: 8796068
    Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: August 5, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 8796131
    Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: August 5, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Edward E. Jones, Sharad N. Yedave, Ying Tang, Barry Lewis Chambers, Robert Kaim, Joseph D. Sweeney, Oleg Byl, Peng Zou
  • Publication number: 20140209627
    Abstract: The present disclosure relates to a blow-molded, rigid collapsible container that can be suitable for storage and dispensing systems of practically any size. The rigid collapsible container may be a stand-alone container. The container may be blow-molded as a unitary piece that may include folds or pre-folds that allows the container to collapse into a relatively flat position. In an expanded state, the container may have a generally trapezoidal prism shape.
    Type: Application
    Filed: August 22, 2012
    Publication date: July 31, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Glenn Tom, Thea Annette Ellingson, Amy Koland, Dale Gene Mowrey
  • Publication number: 20140213498
    Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
    Type: Application
    Filed: March 25, 2014
    Publication date: July 31, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
  • Publication number: 20140202547
    Abstract: A polyvinylidene fluoride (PVDF) pyrolyzate adsorbent is described, having utility for storing gases in an adsorbed state, and from which adsorbed gas may be desorbed to supply same for use. The PVDF pyrolyzate adsorbent can be of monolithic unitary form, or in a bead, powder, film, particulate or other finely divided form. The adsorbent is particularly suited for storage and supply of fluorine-containing gases, such as fluorine gas, nitrogen trifluoride, carbo-fluoride gases, and the like. The adsorbent may be utilized in a gas storage and dispensing system, in which the adsorbent is contained in a supply vessel, from which sorbate gas can be selectively dispensed.
    Type: Application
    Filed: March 25, 2014
    Publication date: July 24, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Shaun M. Wilson, Edward A. Sturm
  • Publication number: 20140206134
    Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
    Type: Application
    Filed: March 24, 2014
    Publication date: July 24, 2014
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender