Abstract: Referring to design data for a sample, a measurement region is defined at a portion in the design data which has no step in an edge of a pattern. In addition, an edge as a characteristic portion is detected from the design data, and an edge as a characteristic portion corresponding to the characteristic portion of the design data is detected from a secondary electron image. Then, the measurement region is positioned and located in a secondary electron image based on a positional relationship between the edge of the design data and the edge of the secondary electron image. A width of the pattern is measured on the basis of a distance between the two edges included in the measurement region thus located.

Abstract: A charged particle beam inspection apparatus includes: an electron gun emitting an electron beam; first and second condenser lenses used to focus the electron beam; a beam control panel disposed between the first and second condenser lenses; and a control unit performing stabilizing processing in which excitation currents respectively supplied to the first condenser lens and the second condenser lens are set to have predetermined values, thereby the current amount of the electron beam passing through an opening of the beam control panel is regulated so that the electron beam to be emitted onto the sample has a larger current amount than that at a measurement, and then the electron beam is emitted onto the sample for a predetermined time period. After the stabilizing processing, the control unit sets the values of the excitation currents back to values for the measurement in order to measure dimensions of the sample, the excitation currents respectively supplied to the first and second condenser lenses.

Abstract: In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S41 and S44). Then, correction parameters are obtained, which allow a relationship between exposure intensity and a line width for a correction target column cell to coincide with a relationship between exposure intensity and a line width for a reference column cell selected from among the plurality of column cells (Steps S43 and S46). Thereafter, exposure time of each column cell is obtained by correcting the exposure time of the reference column cell based on the correction parameters thus obtained.

Abstract: An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

Abstract: A pattern measuring apparatus includes: an electron irradiating unit for radiating an electron beam onto a sample while scanning; an image data acquiring unit for acquiring an image of a pattern on the basis of secondary electrons generated from the sample; a measurement region setting unit for setting paired measurement regions each including a pattern edge in the image; and a controlling unit for calculating a distance between pattern edges in the paired measurement regions by detecting a shape of the pattern edge. The control unit calculates edge characteristic curves by finding moving averages of edge profiles and defines the positions of peak values of the edge characteristic curves as edge positions of the patterns in the measurement regions.

Abstract: A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, the two annular permanent magnets being magnetized in an optical axis direction and symmetrical about the optical axis, where the electromagnetic coils adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, where the electron beam converging unit is disposed in each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.

Abstract: An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity.

Abstract: A method for a stage device of an electron beam exposure system which conducts a cleaning operation and an electron beam (EB) exposure operation is disclosed. The method includes the steps of moving a movable stage within a predetermined range and regulating pressure of gas supplied to an air bearing; and setting a floating height of the movable stage in the cleaning operation lower than that in the EB exposure operation and setting the pressure in a differential pumping portion in the cleaning operation equal to that in the EB exposure operation, or setting the floating height of the movable stage in the cleaning operation equal to that in the EB exposure operation and setting the pressure in the differential pumping portion in the cleaning operation higher than that in the EB exposure operation.

Abstract: An electron detection device including: one scintillator 31 having an opening through which an electron beam emitted from an electron gun passes; a plurality of photoguides 22 of the same shape, which are bonded to the scintillator and disposed symmetrically about an optical axis; and a photomultiplier tube which is connected to one side of each of the photoguides 22, the side opposing to the optical axis side, and converts light into electrical signals, the light being emitted by the scintillator 31 receiving light through the photoguide 22. The photoguides 22 are joined so as to equally divide the scintillator 31 symmetrically about the optical axis. Moreover, a position and an area of a portion bonded to the scintillator 31, in each of the photoguides 22, are the same among the photoguides 22.

Abstract: Provided is a heater power control circuit which switches on/off a voltage signal supplied from a direct-current power source to control a power of a heater by controlling a voltage applied to the heater. The heater power control circuit includes a voltage smoothing circuit that is disposed between the heater and a switching circuit which switches on/off a voltage supplied from the direct-current power source. The voltage smoothing circuit converts the voltage into an analog voltage signal by smoothing a voltage signal obtained by switching on/off the voltage.

Abstract: An electron gun includes: an electron source; an accelerating electrode; an extraction electrode for extracting electrons from an electron emission surface of the electron source; a suppressor electrode for suppressing emission of electrons from a side surface of the electron source; and an electron beam converging unit for converging an electron beam of thermal field emission electrons emitted from the electron emission surface by applying an electric field to the electron emission surface. The electron beam converging unit is an electrostatic lens electrode which is placed between the extraction electrode and the accelerating electrode and having an opening portion in its center. A voltage is applied to the electrostatic lens electrode to converge the electron beam.

Abstract: A pattern measurement apparatus includes a beam intensity distribution creation unit to scan a charged particle beam over a reference pattern having edge portions formed at a right angle to create a line profile of the reference pattern and thus create a reference-beam intensity distribution, an edge width detection unit to determine line profiles for pattern models including edges formed at various inclination angles by use of the reference-beam intensity distribution and calculate edge widths reflecting an influence of a width of a reference beam, and a correspondence table creation unit to calculate correction values for edge positions from the calculated edge widths and the pattern models and create a correspondence table in which the edge widths and the correction values are associated with one another.

Abstract: A stage device for use in a vacuum includes a frame-shaped movable stage having a sample mounting surface, a fixed stage surrounded by the movable stage, an air bearing to float the movable stage by supplying gas to a gap between the stages, a pressure regulator to regulate a pressure of the gas, a differential pumping portion to prevent the gas from flowing outside the gap, and a controller. The controller moves the movable stage within a predetermined range under a pressure in the differential pumping portion set equal to that for movable stage in use when setting a floating height of the movable stage lower than that for movable stage in use, and under the pressure in the differential pumping portion set higher than that for movable stage in use when setting the floating height of the movable stage equal to that for movable stage in use.

Abstract: A pattern measurement apparatus and a pattern measurement method are capable of easily distinguishing a line pattern and a space pattern from one another, without being affected by the luminance of the pattern. The pattern measurement apparatus includes: irradiation unit for irradiating a sample with an electron beam; first electron detector and second electron detector arranged with an optical axis of the electron beam in between; image processor for generating image data of the pattern; line profile generator for generating a line profile of the pattern; and controller for causing the image processor to generate the image data of the pattern on the basis of an amount of electrons corresponding to the difference between a signal detected by the first electron detector and a signal detected by the second electron detector.

Abstract: A D/A converter includes a D/A converter base part having a first D/A converter unit performing D/A conversion of high order bits and a second D/A converter unit performing D/A conversion of low order bits and including an auxiliary bit assigned an identical weight to a least significant bit, a correction D/A converter part, an error detection processing section generating a digital code supplied to a correction D/A converter unit in the correction D/A converter part, and a control section. The control section compares one bit current source with another bit current source in a lower order than the one bit current source, and corrects a value of the one bit current source by causing to supply the digital code to the correction D/A converter unit when the value of the one bit current source changes.

Abstract: A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

Abstract: A mask for exposure, which is used in a multi-column electron beam exposure apparatus having multiple column cells, includes a stencil pattern group constituted by multiple stencil patterns for each of the multiple column cells. The stencil pattern groups are arranged at intervals corresponding to arrangement intervals of the multiple column cells, and all of the stencil pattern groups are formed on a single mask substrate. The stencil pattern groups include: a first stencil pattern group formed within a deflectable range of an electron beam of each of the multiple column cells; and a second stencil pattern group having two or more of the first stencil patterns.

Abstract: A driver circuit includes a main driver which receives an input signal and outputs a first signal corresponding to the input signal, a sub driver which receives the input signal and outputs a non-inverted signal and an inverted signal corresponding to the input signal, a differentiating circuit including resistors and a variable capacity condenser, which outputs signals by differentiating the non-inverted signal and the inverted signal, respectively, and an addition unit which outputs a high frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the non-inverted signal, or a low frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the inverted signal.

Abstract: Provided is a mask inspection apparatus including: emitting unit for emitting electron beams onto a sample; electron detecting unit for detecting the quantity of electrons produced, by the emission of the electron beams, from the sample with patterns formed thereon; image processing unit for generating image data for the patterns on the basis of the electron quantity; and controlling unit for controlling the emitting unit, the electron detecting unit, and the image processing unit. The controlling unit calculates, from the size of a designated observation area of the sample, a division number of divisional images that are synthesized to form a joint image that covers the entire designated observation area. The controlling unit determines divisional areas so that adjacent divisional areas partially overlap each other. The controlling unit acquires SEM images for the respective divisional areas.

Abstract: A delay lock loop circuit and its delay amount calibration method is disclosed. An initially set value of a counter is determined by a technique which replaces measurement of a delay amount, whereby a time required for calibration of a delay circuit can be reduced. One counter set value of a plurality of counter set values is loaded, a delay lock loop circuit is switched to a lock mode, and a sequence circuit of a cycle slip detection circuit is reset. Thereafter, a cycle slip detection signal output from the sequence circuit is read, and based on the reading, it is judged whether or not an output signal of a delay circuit causes cycle slip. If the cycle slip is caused, the counter set value is switched. If any cycle slip is not caused, the counter set value is locked, thereby terminating the process.