Abstract: Disclosed are systems for continuous production of ozone strong water, the systems comprising an injection device that injects an acidification agent into a pressurized feed liquid, a diffuser device that injects ozone into a body of the acidic pressurized feed water, and injection nozzles each controlled by a valve that adjust a flow rate of the ozone strong water discharged from a dissolution column to match a flow rate of the acidic pressurized feed water fed to the dissolution column, thereby maintaining a start-up mode in an upper portion of the dissolution column that favors a high efficiency of ozone mass transfer and a steady-state mode in a lower portion of the dissolution column that favors a high dissolved ozone concentration coexistent in the body of the acidic pressurized liquid, wherein a concentration gradient of dissolved ozone is formed along a height of the body of the acidic pressurized liquid.

Abstract: Method for removing arsenic mineral from a lead concentrate by reverse flotation with an ozone pre-treatment. The method comprises the steps of: receiving a slurry of the lead concentrate that has previously undergone flotation processes, bubbling ozone into the slurry of the lead concentrate to remove reagents used in previous flotation processes, adding a sulfide salt to the slurry to depress lead mineral, adding an alkali to increase the pH of the slurry, adding a collector and then a frother to the slurry for a reverse flotation processing and floating the arsenic mineral out of the lead mineral to obtain a now-purified lead concentrate.

Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: A device and method for injection of oxygen-rich gas into a body of liquid with oxygen recycling are disclosed. The device comprises a rotary hollow shaft vertically passing through a float partially immersed in the liquid, an impeller attached to the lower end of the rotary hollow shaft, a columnar structure, surrounding the rotary hollow shaft, mounted on the bottom side of the float and vertically extending into the liquid, a gas diffusion chamber formed by the columnar structure, the float and the liquid surface under the float, and a gas injection conduit passing through the float for delivering the oxygen gas into the gas diffusion chamber, wherein a vacuum is generated in the body of the liquid around the impeller when the impeller is driven to rotate, so that the oxygen-rich gas in the gas diffusion chamber is sucked into the body of the liquid and mixed therein.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Disclosed are methods for operating a glass furnace, the method comprises the steps of feeding a non-pre-reformed hydrocarbon fuel gas stream to a pre-reformer forming a pre-reformed hydrocarbon fuel gas stream, feeding the pre-reformed hydrocarbon fuel gas stream to burners of the furnace, combusting oxidant and the pre-reformed hydrocarbon fuel gas with the burners to produce flue gas, heating air through heat exchange with the flue gas at a recuperator, and transferring heat from heated air to pre-reformer tubes of the pre-reformer. A glass furnace system is also disclosed.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.

Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.

Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: A method for recovery of aluminum hydroxide Al(OH)3 from an aluminum enriched water/wastewater treatment sludge is disclosed. The method includes the steps of: adding a hydrated lime slurry to the aluminum enriched water/wastewater treatment sludge to form an alkaline sludge; adding sodium carbonate Na2CO3 to the alkaline sludge to form a Na2CO3 treated sludge; forming a first supernatant from the Na2CO3 treated sludge of step b) containing NaAl(OH)4; introducing CO2 to the first supernatant to form a precipitate of Al(OH)3 and a second supernatant containing NaHCO3; and recycling at least a portion of the NaHCO3 from the second supernatant back to the alkaline sludge of step a).

Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.

Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.

Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C?N or C?N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.