Abstract: A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.

Abstract: An amplifier circuit includes a first amplifier stage having a first output node; a second amplifier stage having a second output node; and a compensation block electrically coupled between the first and second output nodes. The compensation block has a compensation capacitor electrically coupled to the first node and electrically connectable to the second node, and has an impedance electrically connectable to the compensation capacitor. The compensation capacitor is electrically coupled via a switch to the impedance such that the compensation capacitor can contribute a zero to shunt branch formed by the compensation capacitor and impedance when the compensation capacitor is disconnected from the second node.

Abstract: Embodiments of the present invention may provide an integrated circuit that may comprise a first transistor to receive an input voltage signal at its gate and generate an output voltage signal at its drain. Further, the integrated circuit may comprise a second transistor to form an active load of the first transistor, the second transistor may have its drain and gate coupled to the drain of the first transistor. In addition, the integrated circuit may comprise a third transistor to form a current mirror with the second transistor, a fourth transistor to form an active load of the third transistor, and a fifth transistor to form a current mirror with the fourth transistor. The fifth transistor may be connected to the drain of the second transistor. The integrated circuit may form an amplifier and Gm stage of a reference buffer.

Abstract: Backside recesses in a base member host components, such as sensors or circuits, to allow closer proximity and efficient use of the surface space and internal volume of the base member. Recesses may include covers, caps, filters and lenses, and may be in communication with circuits on the frontside of the base member, or with circuits on an active backside cap. An array of recessed components may a form complete, compact sensor system.

Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

Abstract: Apparatus and methods reduce the likelihood of amplifier saturation due to propagated DC offsets, and reduce the recover from saturated stated when such saturation occurs. Advantageously, these attributes are beneficial for monitoring of bioelectric signals. A circuit uses an instrumentation amplifier connected as a high pass filter to attenuate large DC offsets and amplify small signals. The circuit can include an instrumentation amplifier electrically coupled with a first feedback circuit including at least one resistor and a second feedback circuit including an op-amp. The feedback circuit can also include a low-pass filter. The op-amp in the second feedback circuit can be configured as a non-inverting amplifier, an inverting amplifier, and/or an integrator circuit. Alternatively, the circuit can include an instrumentation amplifier with one feedback circuit including at least one resistor, and a coupling capacitor electrically coupled with a reference voltage.

Abstract: Apparatuses are disclosed, such as those involving integrated circuit packaging. In one embodiment, a chip package includes: an encapsulation having a top surface and a bottom surface facing away from the top surface. The package further includes a leadframe including a plurality of leads. Each of the leads includes an exposed portion exposed through one of edges of the bottom surface of the encapsulation. The exposed portion has a length. At least one of exposed portions positioned along one of the edges of the bottom surface of the encapsulation has a length different from other exposed portions along the edge. The package can also include a dummy pad exposed through a corner of the bottom surface. The configuration can enhance solder joint reliability of the package when the package is attached to a printed circuit board.

Abstract: A method of producing a MEMS device provides a MEMS apparatus having released structure. The MEMS apparatus is formed at least in part from an SOI wafer having a first layer, a second layer spaced from the first layer, and an insulator layer between the first layer and second layer. The first layer has a top surface, while the second layer has a bottom surface facing the top surface. After providing the MEMS apparatus, the method increases the roughness of at least the top surface of the first layer or the bottom surface of the second layer.

Abstract: An analog-to-digital converter system that includes a pipeline of successively-cascaded signal converters, each operating alternatively in a first circuit configuration and a second circuit configuration, an error estimator coupled to the pipeline to receive the digitized error for estimating an amplifier gain of the present signal converter stage, and a code aligner/corrector that temporally aligns and corrects the digital codes received from the successively-cascaded signal converters to provide a digital out of the ADC system.

Abstract: Embodiments of the present disclosure may provide a charge redistribution DAC with an on-chip reservoir capacitor to provide charges to the DAC in lieu of traditional external reference voltages. The DAC may include the on-chip reservoir capacitor having a first plate and a second plate, an array of DAC capacitors to generate a DAC output, and an array of switches controlled by a DAC input word to couple the DAC capacitors to the reservoir capacitor. The charge redistribution DAC may further comprise a first switch connecting the first plate to an external terminal for a first external reference voltage, and a second switch connecting the second plate to an external terminal for a second external reference voltage. One embodiment may provide an ADC that includes the charge redistribution DAC.

Abstract: A device and method for measuring active and reactive powers of an alternating current includes receiving a first signal representing a current and a second signal representing a voltage, in which the current includes a phase offset with respect to the voltage, calculating an active power and reactive power based on the first and second signals, and calibrating the calculated active and reactive powers with respect to the phase offset using first and second constants, in which the first and second constants respectively correspond to a sine value and a cosine value of the phase offset.

Abstract: Circuits for generating a PTAT voltage as a base-emitter voltage difference between a pair of bipolar transistors. The circuits may form unit cells in a cascading voltage reference circuit that increases the PTAT voltage with each subsequent stage. The bipolar transistors are controlled using a biasing arrangement that includes an MOS transistor connected to a current mirror that provides the base current for the bipolar transistors. A voltage reference is formed by combining a PTAT voltage and a CTAT voltage at the last stage. The voltage reference may be obtained from the voltage at an emitter of one of the bipolar transistors in the last stage.

Abstract: Area-efficient voltage regulators are provided in which a first transistor has a first breakdown voltage and a first on-state resistance and a second transistor has a second breakdown voltage that exceeds the first breakdown voltage and a second on-state resistance that exceeds the first on-state resistance. With this arrangement, the second transistor can be biased to raise an output voltage. When the difference between an input voltage and the output voltage is less than a predetermined voltage, the second transistor is disabled and the first transistor is controlled to provide the output voltage at a wherein the controlling is preferably performed with a feedback control loop. The die area of the first transistor can be reduced because its on-state breakdown need only exceed the predetermined voltage rather than the substantially-higher input voltage.

Abstract: An interface circuit for controlling a cross-domain signal link between a first circuit domain and a second circuit domain in a circuit may include first and second controllers, each of the first and second controllers including a first input coupled to a first voltage source of the first circuit domain and a second input coupled to a second voltage source of the second circuit domain.

Abstract: A switch may include a MOS transistor alternatively operating in an ON phase and an OFF phase, a first voltage level shifter, and a second voltage level shifter. The MOS transistor may include a source for receiving an input signal, a drain for connecting to a load, and a gate. The first voltage level shifter may be selectively coupled between the source and the gate during the ON phase, and the second voltage level shifter may be selectively coupled between the gate and the source during the OFF phase.

Abstract: Apparatus and methods are disclosed, such as those involving a receiver device. One such apparatus includes an equalizer configured to process an input signal transmitted over a channel. The equalizer includes a first node configured to receive the input signal; a second node; and a programmable gain amplifier (PGA) having an adjustable gain. The PGA has an input electrically coupled to the first node, and an output electrically coupled to a third node. The equalizer also includes a high pass filter (HPF) having an input electrically coupled to the third node, and an output electrically coupled to the second node; and a control block configured to adjust one or more of the PGA or the HPF at least partly in response to a PGA output signal from the PGA or an HPF output signal from the HPF.

Abstract: Apparatus and methods are disclosed, such as those involving a receiver device. One such apparatus includes an equalizer configured to process an input signal transmitted over a channel. The equalizer can include a programmable gain amplifier (PGA) block which includes an input node configured to receive the input signal; an output node; and a programmable gain amplifier (PGA). The PGA amplifies the input signal with an adjustable gain. The PGA block also includes a gain control block having an input electrically coupled to the input node. The gain control block is configured to adjust the gain of the PGA at least partly in response to the input signal from the input node such that the PGA generates an output signal with a substantially constant amplitude envelope to the output node.

Abstract: Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on opposite sides of the n-well. The first p-well includes a first P+ region and a first N+ region and the second p-well includes a second P+ region and second N+ region. The device further includes a third P+ region disposed along a boundary of the n-well and the first p-well and a fourth P+ region disposed along a boundary of the n-well and the second p-well. A first gate is disposed between the first N+ region and the third P+ region and a second gate is disposed between the second N+ region and the fourth P+ region. The device provides bi-directional blocking voltage protection during high energy stress events, including in applications operating at very low to medium swing voltages.

Abstract: A method and apparatus for maintaining communication between an HDMI sources and an HDMI sink by monitoring data received from the HDMI source, and, based on the monitoring, dynamically switching between a first and a second mode without user intervention. The device may include a head end connector, a tail end connector and a cable. The head end connector may include a controller, a memory and an electrical signal transceiver. The controller may monitor data output from the source, and based on the outputted data; the controller may determine whether to maintain a first communication method or a second communication method.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.