Abstract: An electron generating apparatus includes a filament, a power supply configured to supply power to the filament so as to make the filament emit an electron, and a controller configured to repeatedly detect a value having a correlation with power supplied from the power supply to the filament, determine whether a state of the filament satisfies a notification condition, by using a plurality of detected values, and perform notification when the state satisfies the notification condition.

Abstract: An ionization gauge includes an anode, a cathode, and an electromagnetic wave source. The cathode includes a first cathode plate having a through hole through which the anode passes, a storage portion configured to store the electromagnetic wave source, and a passage arranged between the storage portion and the through hole and configured to pass an electromagnetic wave generated by the electromagnetic wave source.

Abstract: X-ray generation apparatus includes X-ray generation tube having cathode and anode, voltage supply for supplying voltage to the X-ray generation tube via conductive line, storage container including first portion forming first space storing the voltage supply, second portion forming second space having width smaller than that of the first space and storing the X-ray generation tube, and connecting portion connecting the first and second portions to form internal space in which the first space and the second space communicate, and insulating member arranged in the internal space to block shortest path between the conductive line and convex portion of the connecting portion. The insulating member is formed by connecting members by adhesive material, and is configured to block linear path between the adhesive material and the conductive line and linear path between the adhesive material and the cathode.

Abstract: A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to the target, an anode to which a positive potential is applied, and a capture for capturing droplets from the target. The anode has an opening, and the capture is arranged in the opening.

Abstract: An ionization gauge includes an anode having a rod shape, and a cathode including a cathode plate having a through hole through which the anode extends. A shape of the through hole on a section along an axial direction of the anode includes a concave portion sandwiched between two convex portions.

Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an ?-Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the ?-Al2O3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the ?-Al2O3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

Abstract: X-ray generation tube includes electron gun, and anode having target to generate X-rays upon collision with electrons from the electron gun. The electron gun includes cathode having electron emitting portion, extraction electrode to extract the electrons from the electron emitting portion, and focusing electrode to focus the extracted electrons. The focusing electrode includes first portion having tubular shape, and second portion arranged inside the first portion. The first portion includes distal end facing the anode, the second portion includes opposing surface facing the anode, and the opposing surface includes electron passage hole through which the electrons from the electron emitting portion pass. Distance between the distal end and the anode is shorter than that between the opposing surface and the anode. Thermal conductivity of the distal end is lower than that of the second portion.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.

Abstract: A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

Abstract: A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

Abstract: An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Abstract: An X-ray generation apparatus includes an X-ray generation tube including a cathode having an electron emitting portion, and an anode having a target, a voltage supply supplying voltage to the X-ray generation tube via a conductive line, a storage container having a first portion forming a first space storing the voltage supply, a second portion forming a second space storing the X-ray generation tube, and a connecting portion connecting the first portion and the second portion, and an insulating liquid filling internal space of the storage container. The connecting portion includes a convex portion pointed toward the internal space. The cathode is arranged between the convex portion and the anode, and an insulating member is arranged to surround portion of the conductive line and block shortest path between the conductive line and the convex portion.

Abstract: A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.

Abstract: An X-ray generating tube includes an insulating tube having a first open end and a second open end, a cathode including an electron emission source and arranged to close the first open end of the insulating tube, an anode including a target that generates an X-ray upon collision with electron from the electron emission source and arranged to close the second open end of the insulating tube, and a tubular electrical conductive member extending from the anode in an inner space of the insulating tube. The insulating tube includes a tubular rib at a position spaced apart from the first open end and spaced apart from the second open end, and the tubular rib is arranged in a radial direction when viewed from an end of the tubular electrical conductive member on a side of the cathode.

Abstract: An X-ray generating tube includes an insulating tube having a first open end and a second open end, a cathode including an electron emission source and arranged to close the first open end of the insulating tube, an anode including a target that generates an X-ray upon collision with electron from the electron emission source and arranged to close the second open end of the insulating tube, and a tubular electrical conductive member extending from the anode in an inner space of the insulating tube. The insulating tube includes a tubular rib at a position spaced apart from the first open end and spaced apart from the second open end, and the tubular rib is arranged in a radial direction when viewed from an end of the tubular electrical conductive member on a side of the cathode.

Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.