Abstract: A solid-state imaging device includes a pixel part, a reading part for reading a pixel signal from the pixel part and a response data generating part including a fuzzy extractor. The response data generating part generates response data including a unique key in association with at least one selected from among variation information of pixels and variation information of the reading part. The response data generating part generates, when regenerating a key, a unique key using helper data acquired in generation of an initial key, variation information acquired in the regeneration of the key, and reliability information determined based on the variation information acquired in the regeneration of the key.

Abstract: A fuzzy extractor includes an initial key generating part including a true random number generator, and a key regenerating part. The true random number generator generates a true random number using a read-out signal read from the reading part or a pixel signal read from the pixels of the pixel part in a true random number generation mode. The initial key generating part generates helper data and an initial key based on the true random number generated by the true random number generator and variation information acquired as a response when the initial key is generated. The key regenerating part generates, when a key is regenerated, a unique key based on helper data acquired when the initial key is generated and variation information acquired as a response including an error when the key is regenerated.

Abstract: A solid-state imaging device 10 capable of extending a dynamic range by combining a plurality of read-out signals has a signal processing part 710 which, when combining the plurality of read-out signals, selects at least one signal which becomes necessary for the combination in accordance with a result of a comparison between at least one read-out signal among the plurality of read-out signals (high conversion gain signal HCG, low conversion gain signal LCG) with a threshold value (Joint Thresh), applies the selected signal to the combinational processing, and thereby generates the combined signal extended in the dynamic range, and the signal processing part can dynamically change the threshold value. By this configuration, it is possible to smoothly switch a plurality of signals to be combined irrespective of variations in individual units etc., possible to realize a higher dynamic range while suppressing deterioration of images, and consequently possible to realize a higher quality of image.

Abstract: A solid-state imaging device 10 includes a signal processing part 710 which, when combining specific read-out signals among the plurality of read-out signals, selects at least one signal which becomes necessary for a combinational operation in accordance with a result of a comparison between at least one read-out signal among the plurality of read-out signals and a threshold value, applies the selected signal to the combinational processing, and generates a combined signal extended in dynamic range, and wherein the signal processing part, when combining read-out signals from one specific pixel, determines the combinational information concerning the combinational operation of these read-out signals with reference to the combinational information concerning the combinational operation of the surrounding pixels of the one specific pixel. By this configuration, it is possible to smoothly switch a plurality of signals, possible to realize a higher dynamic range and a higher quality of image.

Abstract: A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, it is possible to generate a unique key having a high confidentiality. Further, it is possible to improve reproducibility and uniqueness of the unique ID, is possible to secure a high tamper resistance of the unique key, and consequently is possible to reliably prevent tampering and forgery of an image.

Abstract: A solid-state imaging device which, in a voltage mode, simultaneously samples the pixel signal in all the pixels in a signal holding part serving as the pixel signal storage part, reads converted signals corresponding to readout signals held in a first signal holding capacitor and a second signal holding capacitor to a first signal line, reads converted signals corresponding to readout reset signals simultaneously in parallel to the second signal line, and supplies the same as a differential signal to a column readout circuit. Due to this, a sufficiently low parasitic light sensitivity corresponding to the application can be realized, settling error can be suppressed, and pixel fixed pattern noise can be reduced.

Abstract: A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, it is possible to generate a unique key having a high confidentiality. Further, it is possible to improve reproducibility and uniqueness of the unique ID, is possible to secure a high tamper resistance of the unique key, and consequently is possible to reliably prevent tampering and forgery of an image.

Abstract: A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, a unique key having a high confidentiality can be generated. Further, reproducibility and uniqueness of the unique ID can be improved to secure a high tamper resistance of the unique key, and tampering and forgery of an image can be reliably prevented.

Abstract: A solid-state imaging device comprised of a first substrate on which a pixel part is formed and a second substrate on which a column readout circuit is formed along a column level connection part, a row driver is formed along a row level connection part, and a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion among interconnects is formed, the pitch conversion-use interconnect region is formed at least between the end part of the column readout circuit having a third pitch shorter than the pixel part and the end part of the column level connection part and/or between the end part of the row driver having a fourth pitch shorter than the pixel part and the end part of the row level connection part.

Abstract: A pinned photodiode has a substrate having a first substrate side to which light is illuminated and a second substrate side opposite the first substrate side, a photoelectric conversion part including a first conductivity type semiconductor layer buried into the substrate and having a photoelectric conversion function for the received light and a charge accumulation function, a second conductivity type separation layer formed in the side portion of the first conductivity type semiconductor layer in the photoelectric conversion part, and one charge transfer gate part capable of transferring the charge accumulated in the photoelectric conversion part.

Abstract: A solid-state imaging device 10 capable of extending a dynamic range by combining a plurality of read-out signals has a signal processing part 710 which, when combining the plurality of read-out signals, selects at least one signal which becomes necessary for the combination in accordance with a result of a comparison between at least one read-out signal among the plurality of read-out signals (high conversion gain signal HCG, low conversion gain signal LCG) with a threshold value (Joint Thresh), applies the selected signal to the combinational processing, and thereby generates the combined signal extended in the dynamic range, and the signal processing part can dynamically change the threshold value. By this configuration, it is possible to smoothly switch a plurality of signals to be combined irrespective of variations in individual units etc., possible to realize a higher dynamic range while suppressing deterioration of images, and consequently possible to realize a higher quality of image.

Abstract: A solid-state imaging device 10 includes a signal processing part 710 which, when combining specific read-out signals among the plurality of read-out signals, selects at least one signal which becomes necessary for a combinational operation in accordance with a result of a comparison between at least one read-out signal among the plurality of read-out signals and a threshold value, applies the selected signal to the combinational processing, and generates a combined signal extended in dynamic range, and wherein the signal processing part, when combining read-out signals from one specific pixel, determines the combinational information concerning the combinational operation of these read-out signals with reference to the combinational information concerning the combinational operation of the surrounding pixels of the one specific pixel. By this configuration, it is possible to smoothly switch a plurality of signals, possible to realize a higher dynamic range and a higher quality of image.

Abstract: A solid-state imaging device comprised of a first substrate on which a pixel part is formed and a second substrate on which a column readout circuit is formed along a column level connection part, a row driver is formed along a row level connection part, and a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion among interconnects is formed, the pitch conversion-use interconnect region is formed at least between the end part of the column readout circuit having a third pitch shorter than the pixel part and the end part of the column level connection part and/or between the end part of the row driver having a fourth pitch shorter than the pixel part and the end part of the row level connection part.

Abstract: A pinned photodiode has a substrate having a first substrate side to which light is illuminated and a second substrate side opposite the first substrate side, a photoelectric conversion part including a first conductivity type semiconductor layer buried into the substrate and having a photoelectric conversion function for the received light and a charge accumulation function, a second conductivity type separation layer formed in the side portion of the first conductivity type semiconductor layer in the photoelectric conversion part, and one charge transfer gate part capable of transferring the charge accumulated in the photoelectric conversion part.

Abstract: A solid-state imaging device capable of reducing an area of a chip, capable of realizing both reduction of voltage and prevention of inversion video noise and consequently capable of realizing a higher image quality having a pixel portion and a clipping circuit capable of clipping a pixel readout voltage in accordance with a clipping voltage, wherein the pixel includes a photo-electric conversion element PD, a transfer element capable of transferring a charge accumulated in the photo-electric conversion element in a transfer period, a floating diffusion FD to which the charge accumulated in the photo-electric conversion element is transferred through a transfer element, a source-follower element which converts the charge in the floating diffusion to a voltage signal in accordance with a charge quantity, and a reset element which resets the floating diffusion to a predetermined potential in a resetting period, and the clipping circuit is arranged in an ineffective region of the pixel portion, a driving method

Abstract: A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, a unique key having a high confidentiality can be generated. Further, reproducibility and uniqueness of the unique ID can be improved to secure a high tamper resistance of the unique key, and tampering and forgery of an image can be reliably prevented.

Abstract: A solid-state imaging device which, in a voltage mode, simultaneously samples the pixel signal in all the pixels in a signal holding part serving as the pixel signal storage part, reads converted signals corresponding to readout signals held in a first signal holding capacitor and a second signal holding capacitor to a first signal line, reads converted signals corresponding to readout reset signals simultaneously in parallel to the second signal line, and supplies the same as a differential signal to a column readout circuit. Due to this, a sufficiently low parasitic light sensitivity corresponding to the application can be realized, settling error can be suppressed, and pixel fixed pattern noise can be reduced.

Abstract: A solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus capable of suppressing occurrence of motion distortion while realizing widening of dynamic range and in turn realizing a higher image quality are provided.

Abstract: A solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus capable of suppressing occurrence of motion distortion while realizing widening of dynamic range and in turn realizing a higher image quality are provided.

Abstract: A solid-state imaging device and a method therefore capable of suppressing occurrence of motion distortion are provided. Each pixel includes a photo diode PD which accumulates a charge generated by photo-electric conversion in an accumulation period, a transfer transistor capable of transferring the accumulated charge in a transfer period, a floating diffusion FD to which the charge accumulated in the photo diode PD is transferred, a source-follower transistor which converts the charge of the floating diffusion FD to a voltage signal in accordance with the charge quantity, and a capacity changing portion capable of changing the capacity of the floating diffusion FD in accordance with a capacity changing signal, the capacity of the floating diffusion FD being changed by the capacity changing portion in a predetermined period in one readout period with respect to the accumulation period and a conversion gain being switched in this one readout period.