Patents Assigned to Cabot Microelectronics Corporation
  • Patent number: 10293459
    Abstract: Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: May 21, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul Andre Lefevre, William C. Allison, Alexander William Simpson, Diane Scott, Ping Huang, Leslie M. Charns, James Richard Rinehart, Robert Kerprich
  • Patent number: 10220487
    Abstract: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: March 5, 2019
    Assignee: Cabot Microelectronics Corporation
    Inventors: Pradip K. Roy, Manish Deopura, Sudhanshu Misra
  • Patent number: 10160092
    Abstract: Polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are also described.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: December 25, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul Andre Lefevre, William C. Allison, Alexander William Simpson, Diane Scott, Ping Huang, Leslie M. Charns, James Richard Rinehart, Robert Kerprich
  • Patent number: 10124464
    Abstract: The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: November 13, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Mary Cavanaugh, Steven Kraft, Andrew Wolff, Phillip W. Carter, Elise Sikma, Jeffrey Cross, Benjamin Petro
  • Patent number: 10100272
    Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 16, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Roman Ivanov, Cheng-yuan Ko, Fred Sun
  • Patent number: 10066126
    Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: September 4, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Kevin P. Dockery, Helin Huang, Matthew Carnes, Glenn Whitener
  • Patent number: 10029345
    Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: July 24, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Viet Lam, Ji Cui
  • Patent number: 9951054
    Abstract: The invention provides a chemical-mechanical polishing pad comprising a polymeric matrix and 0.1-15 wt. % of metal oxide particles. The polymeric matrix has pores, the metal oxide particles are uniformly distributed throughout the pores, and the metal oxide particles have a specific surface area of about 25 m2/g to about 450 m2/g. The invention further provides a method of polishing a substrate with the polishing pad.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: April 24, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shoutian Li, Robert Vacassy, Jaishankar Kasthuri
  • Patent number: 9944828
    Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: April 17, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Elise Sikma, Witold Paw, Benjamin Petro, Jeffrey Cross, Glenn Whitener
  • Patent number: 9931728
    Abstract: Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: April 3, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: William C. Allison, Diane Scott, Paul Andre Lefevre, James P. LaCasse, Alexander William Simpson
  • Patent number: 9931729
    Abstract: Polishing pads with grooved foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a pattern of grooves disposed therein. A continuous polishing surface layer is attached to the pattern of grooves of the foundation layer. In another example, a polishing pad for polishing a substrate includes a foundation layer with a surface having a pattern of protrusions disposed thereon. Each protrusion has a top surface and sidewalls. A non-continuous polishing surface layer is attached to the foundation layer and includes discrete portions. Each discrete portion is attached to the top surface of a corresponding one of the protrusions of the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a grooved foundation layer are also described.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: April 3, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul Andre Lefevre, William C. Allison, Diane Scott, James P. LaCasse
  • Patent number: 9909032
    Abstract: The invention provides a chemical-mechanical polishing composition containing aluminate-modified silica particles, a polyacrylamide, a heterocyclic film-forming agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: March 6, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Selvaraj Palanisamy Chinnathambi, Michael White
  • Patent number: 9868185
    Abstract: Polishing pads having a foundation layer and a window attached to the foundation layer, and methods of fabricating such polishing pads, are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a first modulus. A polishing layer is attached to the foundation layer and has a second modulus less than the first modulus. A first opening is through the polishing layer and a second opening is through the foundation layer. The first opening exposes at least a portion of the second opening and exposes a portion of the foundation layer. A window is disposed in the first opening and is attached to the exposed portion of the foundation layer.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: January 16, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Paul Andre Lefevre, William C. Allison, Diane Scott, Jose Arno
  • Patent number: 9850403
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-?-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-?-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: December 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Andrew Wolff, Phillip W. Carter, Kristin Hayes, Benjamin Petro
  • Patent number: 9850402
    Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 26, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Dmitry Dinega, Sairam Shekhar, Renhe Jia, Daniel Mateja
  • Patent number: 9834704
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C13-C20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: December 5, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Andrew Wolff, Phillip W. Carter, Benjamin Petro
  • Patent number: 9828528
    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: November 28, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Reiss, Dana Sauter Van Ness, Viet Lam, Alexander Hains, Steven Kraft, Renhe Jia
  • Patent number: 9828574
    Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: November 28, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Roman Ivanov, Fernando Hung, Cheng-Yuan Ko, Fred Sun
  • Patent number: 9818618
    Abstract: The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a top layer, a middle layer and a bottom layer, wherein the top layer and bottom layer are joined together by the middle layer, and without the use of an adhesive. The invention is also directed to a multi-layer polishing pad comprising an optically transmissive region, wherein the layers of the multi-layer polishing pad are joined together without the use of an adhesive.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: November 14, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Brian Mrzyglod, Jayakrishnan Nair, Garrett Blake
  • Patent number: 9803109
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: October 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hung-Tsung Huang, Ming-Chih Yeh, Chih-Pin Tsai