Patents Assigned to Canon Anelva Corporation
  • Publication number: 20200211808
    Abstract: An X-ray generating tube includes an insulating tube having a first open end and a second open end, a cathode including an electron emission source and arranged to close the first open end of the insulating tube, an anode including a target that generates an X-ray upon collision with electron from the electron emission source and arranged to close the second open end of the insulating tube, and a tubular electrical conductive member extending from the anode in an inner space of the insulating tube. The insulating tube includes a tubular rib at a position spaced apart from the first open end and spaced apart from the second open end, and the tubular rib is arranged in a radial direction when viewed from an end of the tubular electrical conductive member on a side of the cathode.
    Type: Application
    Filed: June 24, 2019
    Publication date: July 2, 2020
    Applicant: Canon Anelva Corporation
    Inventor: Yoichi ANDO
  • Patent number: 10685815
    Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: June 16, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Ryo Matsuhashi, Hiroshi Akasaka, Yoshimitsu Kodaira, Atsushi Sekiguchi, Naoko Matsui
  • Patent number: 10676813
    Abstract: This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 9, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventor: Masahiro Atsumi
  • Patent number: 10636634
    Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: April 28, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Koji Tsunekawa, Masahiro Suenaga, Takeo Konno
  • Publication number: 20200126763
    Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode insulated from the vacuum container and electrically connected to the first output terminal, and a second electrode insulated from the vacuum container and electrically connected to the second output terminal. The second electrode is arranged to surround an entire circumference of the first electrode.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: Canon Anelva Corporation
    Inventors: Kazunari SEKIYA, Masaharu TANABE, Tadashi INOUE, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
  • Publication number: 20200126764
    Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: Canon Anelva Corporation
    Inventors: Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
  • Publication number: 20200126768
    Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: Canon Anelva Corporation
    Inventors: Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
  • Publication number: 20200126767
    Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: Canon Anelva Corporation
    Inventors: Atsushi TAKEDA, Takayuki MORIWAKI, Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
  • Publication number: 20200126766
    Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: Canon Anelva Corporation
    Inventors: Kazunari SEKIYA, Masaharu TANABE, Tadashi INOUE, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
  • Patent number: 10631390
    Abstract: An X-ray generating device includes an X-ray tube, an X-ray tube drive circuit, an electron acceleration voltage generation circuit, and a control unit communicating with the drive circuit and the voltage generation circuit, the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil, a path connecting the drive circuit and the control unit includes an optical fiber cable arranged inside the storage container, the optical fiber cable has a coating that suppresses fluctuation due to a convective flow of the insulating oil, the coating is cured by, from a resin material containing a plasticizer, a part of the plasticizer being leaching out, and the control unit is configured to facilitate leaching of the plasticizer by driving the voltage generation circuit to apply a voltage to the optical fiber cable in a state of no X-ray being generated.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: April 21, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Junya Kawase, Yoichi Ando
  • Patent number: 10626494
    Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: April 21, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Hiroshi Yakushiji, Masahiro Shibamoto, Kazuto Yamanaka, Shogo Hiramatsu, Susumu Karino
  • Patent number: 10629804
    Abstract: A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: April 21, 2020
    Assignee: Canon Anelva Corporation
    Inventors: Yoshinori Nagamine, Koji Tsunekawa, David Djulianto Djayaprawira, Hiroki Maehara
  • Patent number: 10615012
    Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: April 7, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Shigenori Ishihara, Hiroyuki Toya, Yasushi Yasumatsu, Toshikazu Nakazawa, Eiji Nakamura, Shintaro Suda, Shin Imai, Yuu Fujimoto
  • Patent number: 10546720
    Abstract: The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: January 28, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu Kodaira, Isao Takeuchi, Mihoko Nakamura
  • Publication number: 20200001271
    Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member.
    Type: Application
    Filed: September 3, 2019
    Publication date: January 2, 2020
    Applicants: Canon Anelva Corporation, CANON KABUSHIKI KAISHA
    Inventors: Manabu IKEMOTO, Hiroyuki TOKUNAGA
  • Patent number: 10461249
    Abstract: A manufacturing method of a magneto-resistive effect device, the manufacturing method includes steps of: forming an Mg film on a substrate on which a reference layer is formed and oxidizing the Mg film to form an MgO layer on the reference layer; heating the substrate on which the MgO layer is formed; after the step of heating, forming an Mg layer on the MgO layer; cooling the substrate on which the Mg layer is formed; and forming a free layer on the Mg layer in a state where the substrate is cooled by the cooling step, and the step of forming the Mg layer, the step of cooling, and the step of forming the free layer are performed in the process same process chamber.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: October 29, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Hiroyuki Hosoya, Yoshinori Nagamine
  • Patent number: 10433410
    Abstract: An X-ray generation apparatus includes an X-ray tube; a drive circuit that drives the X-ray tube; a voltage generation circuit that generates an electron acceleration voltage applied to the X-ray tube; and a control unit that communicates with the drive circuit, and at least the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil. At least a part of a path connecting the drive circuit and the control unit is formed of an optical fiber cable arranged inside the storage container, and the optical fiber cable has electric field mitigation means for suppressing an electric field occurring due to a potential difference between the drive circuit and the control unit from locally concentrating along a longitudinal direction of the optical fiber cable.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 1, 2019
    Assignee: Canon Anelva Corporation
    Inventor: Yoichi Ando
  • Patent number: 10425990
    Abstract: A vacuum processing apparatus according to this invention includes a heating unit arranged to face a processing surface of a substrate supported by a substrate support unit in a vacuum chamber, a cooling unit arranged to face a reverse surface of the substrate supported by the substrate support unit, a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate and the cooling unit when the heating unit heats the substrate, and a correction unit moving device configured to retract the temperature correction unit from the predetermined position.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: September 24, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Hidehiro Yasukawa, Masahiro Sugihara
  • Patent number: 10388491
    Abstract: To restrict generation of particles or deterioration in process reproducibility caused by a large amount or carbon polymers generated in a plasma generation portion in an ion beam etching apparatus when a magnetic film on a substrate is etched with reactive ion beam etching in manufacturing a magnetic device. In an ion beam etching apparatus, first carbon-containing gas is introduced by a first gas introduction part into a plasma generation portion, and second carbon-containing gas is additionally introduced by a second gas introduction part into a substrate processing space to perform reactive ion beam etching, thereby etching a magnetic material at preferable selection ratio and etching rate while restricting carbon polymers from being formed in the plasma generation portion.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: August 20, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu Kodaira, Tomohiko Toyosato
  • Patent number: 10378100
    Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: August 13, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Koji Tsunekawa, Naoki Watanabe, Motomu Kosuda