Abstract: A device and a method for characterizing the surface shape of a test object. The device for characterizing the surface shape of a test object has a test arrangement (130, 230) for determining the surface shape of a test object (111, 112, 113, 211, 212, 213) using a test wave. The test wave has a wavefront generated by diffraction at a diffractive optical element. The device additionally has a first vacuum chamber (110, 210) and a second vacuum chamber (120, 220), wherein the second vacuum chamber (120, 220) has a magazine for mounting at least two diffractive optical elements (121, 122, 123, 221, 222, 223).

Abstract: A measurement method for interferometrically measuring the shape of a surface (112) of a test object (114). A test wave (125-1, 125-2) directed at the test object has a wavefront that is at least partially adapted to the desired shape of the surface, and a reference wave (128-1, 128-2) directed at a reflective optical element (130-1, 130 2) has a propagation direction that deviates from the propagation direction of the test wave (125-1, 125-2) for each of two input waves by diffraction at a diffractive element (124). For each wavelength, the test wave is superimposed after interaction with the test object with the associated reference wave after the back-reflection at the first reflective optical element. The test and reference waves are diffracted again at the diffractive element for superposition. An interferogram produced by the superposition is captured in a capture plane (148-1, 148-2). The interferograms are jointly evaluated.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: An optical element reflects radiation, such as EUV radiation. The optical element includes a substrate with a surface to which a reflective coating is applied. The substrate has at least one channel through which a coolant can flow. The substrate is formed from fused silica, such as titanium-doped fused silica, or a glass ceramic. The channel has a length of at least 10 cm below the surface to which the reflective coating is applied. The cross-sectional area of the channel varies by no more than +/?20% over the length of the channel.

Abstract: The invention relates to an inspection device for masks for semiconductor lithography, comprising an imaging device for imaging a mask, and an image recording device, wherein one or more correction bodies which exhibit a dispersive behavior for at least one subrange of the illumination radiation used for the imaging are arranged in the light path between the mask and the image recording device. The invention furthermore relates to a method for taking account of longitudinal chromatic aberrations in inspection devices for masks, comprising the following steps: recording a specific number of images having differently defocused positions, and selecting a subset of the images and simulating a longitudinal chromatic aberration of a projection exposure apparatus.

Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.

Abstract: A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.

Abstract: A field facet system for a lithography apparatus includes an optical element. The optical element includes a base section having an optically effective surface. The optical element also includes a plurality of lever sections provided at a rear side of the base section facing away from the optically effective surface. In addition, the field facet system includes two or more actuating elements configured, with the aid of the lever sections acting as levers, to apply in each case a bending moment to the base section to elastically deform the base section and thus to alter a radius of curvature of the optically effective surface. The actuating elements are arranged in series as viewed along a length direction of the optical element.

Abstract: A detection system serves for X-ray inspection of an object. An imaging optical arrangement serves to image the object in an object plane illuminated by X-rays generated by an X-ray source. The imaging optical arrangement comprises an imaging optics to image a transfer field in a field plane into a detection field in a detection plane. A detection array is arranged at the detection field. An object mount holds the object to be imaged and is movable relative to the X-ray source via an object displacement drive along at least one lateral object displacement direction in the object plane. A shield stop with a transmissive shield stop aperture is arranged in an arrangement plane in a light path and is movable via a shield stop displacement drive in the arrangement plane.

Abstract: The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.

Abstract: A microlithographic projection exposure mirror has a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the mirror's optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is applied by a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. One of the electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c, . . . ; 37a, 37b, 37c, . . . ).

Abstract: A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio A/B is greater than 1.1.

Abstract: The present application relates to an apparatus for a scanning probe microscope, said apparatus having: (a) at least one first measuring probe having at least one first cantilever, the free end of which has a first measuring tip; (b) at least one first reflective area arranged in the region of the free end of the at least one first cantilever and embodied to reflect at least two light beams in different directions; and (c) at least two first interferometers embodied to use the at least two light beams reflected by the at least one first reflective area to determine the position of the first measuring tip.

Abstract: A facet mirror for an illumination optical unit of a projection exposure apparatus has a large number of displaceable individual facets with a facet main body and a reflection surface arranged on it. At least some of the individual facets have a displacement range such that they come into contact with a stop surface in one or more displacement positions.

Abstract: Methods and apparatuses for testing a photonic integrated circuit and a corresponding sample holder and a photonic integrated circuit are provided. Here, a location for an illumination light beam can be selected by way of a scanning device, with the result that targeted coupling of the illumination light into the photonic integrated circuit is made possible.

Abstract: A method for calibrating a measuring device (10) for interferometrically determining a shape of an optical surface (12) of an object under test (14). The measuring device includes a module plane (32) for arranging a diffractive optical test module (30) which is configured to generate a test wave (34) that is directed at the optical surface and that has a wavefront at least approximately adapted to a target shape (60) of the optical surface. The method includes: arranging a diffractive optical calibration module (44) in the module plane for generating a calibration wave (80), acquiring a calibration interferogram (88) generated using the calibration wave in a detector plane (43) of the measuring device, and determining a position assignment distribution (46) of points (52) in the module plane to corresponding points (54) in the detector plane from the acquired calibration interferogram.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: A method for removing particles from a mask system for a projection exposure apparatus, including the following method steps: detecting the particle in the mask system, providing laser radiation, and removing the particle by irradiating the particle with laser radiation. The wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.

Abstract: The invention relates to a method and an apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) determining the at least one defect; and (b) ascertaining a repair shape for the at least one defect; (c) wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect.

Abstract: A semiconductor lithography projection exposure apparatus includes a sensor reference including reference elements. The apparatus also includes an optical element, which includes a main body comprising receiving elements receiving the reference elements. The optical element further includes a referential surface that is an optically active surface of the optical element. The reference elements are arranged to determine a position and an orientation of the optical element. A method includes aligning a sensor reference with respect to a referential surface in a semiconductor lithography projection exposure apparatus.