Abstract: A process for producing a Schottky junction type semiconductor device includes the steps of forming a Schottky electrode on a surface of a silicon carbide epitaxial layer, wherein a Schottky electrode made of molybdenum, tungsten, or an alloy thereof is formed on the surface of the silicon carbide epitaxial layer and is subjected to heat treatment so as to induce an alloying reaction at an interface of the silicon carbide epitaxial layer and the Schottky electrode, thereby forming an alloy layer at the interface, whereby the height of a Schottky barrier is controlled while maintaining an n-factor at a nearly constant low value.
Type:
Application
Filed:
March 25, 2005
Publication date:
June 14, 2007
Applicant:
Central Research Institite of Electric Power Industry