Abstract: A method for designing an ultrahigh-resolution photonic-crystal superprism, including the following steps: selecting a medium material, and determining a structure type and parameter of a photonic crystal, obtaining the photonic crystal's equifrequency graph, and looking for an auto-collimation area; obtaining the group velocity distribution of points in the equifrequency graph, and looking for a low group velocity area; optimizing the photonic crystal's structure parameter, facilitating the auto-collimation and the low group velocity area in the photonic crystal's equifrequency graph to be overlapped as much as possible, and defining overlapping area as a work area; obtaining an equal incidence-angle line, rotating the photonic crystal to intersect the equal incidence-angle line with the work area, and selecting the appropriate incidence angle in an intersection point to complete the design of the photonic-crystal superprism.

Abstract: Novel material for chromatographic separations, processes for its preparation, and separation devices containing the chromatographic material. In particular, the novel materials are porous silicon oxynitride materials, which desirably can be surface modified and have enhanced stability at high pH. The novel porous silicon oxynitride material may offer efficient chromatographic separations, and hold great promise as packing material for chromatographic separations.

Abstract: An establishing method of a knowledge library engine based on emergency management includes steps of extracting relevant data from unstructured text information, filtering out unwanted data and improving a structure of the relevant data, so as to ensure homogeneity of the relevant data; structurally analyzing a text content of obtained information, extracting a feature thereof and storing the feature in the feature library as a key word of a knowledge; and processing the obtained information with the automatic word segmentation module, then classifying a result according to an information classification standard, and establishing an association of the knowledge and information classification. A querying method of the knowledge library engine based on emergency management includes steps of: understanding semanteme, understanding knowledge, and querying knowledge.

Abstract: The present invention is a method for distinguishing, classifying and measuring soft and hard inclusions in a liquid metal that includes obtaining a flow through cell disposed on a tube with a top to allow the liquid metal to flow through the flow through cell and into the tube. There is also a mounting and a vacuum system disposed on top of the tube to draw the liquid metal through the flow through cell and into the tube that utilizes a pair of electrodes set inside and outside of the tube to apply an electric current to the liquid metal passing through the flow through cell. An electric resistance change is then measured and an electric resistance pulse is applied to the liquid metal to measure deformed behavior of the inclusions. The resistance pulse method can be used with liquid droplets, steel slag, bubbles and other deformable inclusions.

Abstract: The invention provides a metal alkoxide complex of Formula (I), wherein X, M, R1, R2, R3, m, n, y and z are as defined in the Description. The invention also provides a catalyst composition comprising the metal alkoxide complex and a hydroxy-containing compound, wherein the molar ratio of the metal alkoxide complex to the hydroxy-containing compound is 1:0.1-1000. The invention also provides a production method of poly-?-caprolactone or polyactide, wherein an ?-caprolactone monomer or a lactide monomer is reacted in the presence of the metal alkoxide complex or catalyst composition to obtain poly-?-caprolactone or polylactide. The metal alkoxide complex and the catalyst composition thereof can be used to catalyze the synthesis of poly-?-caprolactone or polylactide with a high efficiency.

Abstract: There is provided a method of manufacturing a Fin Field Effect Transistor (FinFET). The method may include: forming a fin on a semiconductor substrate; forming a dummy device including a dummy gate on the fin; forming an interlayer dielectric layer to cover regions except for the dummy gate; removing the dummy gate to form an opening; implanting ions to form a Punch-Through-Stop Layer (PTSL) in a portion of the fin directly under the opening, while forming reflection doped layers in portions of the fin on inner sides of source/drain regions; and forming a replacement gate in the opening.

Abstract: The present disclosure provides a method for producing a cell with exogenous mitochondria by obtaining synthetic mitochondria via introduction of exogenous mitochondrial DNA into mitochondria or empty mitochondrial shells, and incorporating the same into mammalian cells via endocytosis. As such, effective functionality of exogenous mitochondria in cells is realized. The synthetic mitochondrial DNA genes introduced according to the present disclosure can be stably expressed and effectively passaged. The method for introducing exogenous mitochondrial DNA into mammalian cells as disclosed herein may be used as a whole new mitochondrial molecular cloning means to perform site-directed mutagenesis, gene insertion, gene knockout, gene rearrangement, and the like in mitochondria. Therefore, any molecular cloning modification can be performed on a mammalian mitochondrial DNA, which is of great importance to therapeutic schemes of diseases derived from mitochondrial DNA mutations.

Abstract: The present invention provides a heterocyclic compound represented by the formula (I), its stereoisomers, or a pharmaceutically acceptable salt thereof, pharmaceutical compositions thereof, and their use in preparing a medicament for the prevention and/or treatment of central nervous system disease.

Abstract: A mixed metal oxide catalyst for selective hydrogenation of dienes comprising a Group VIII metal, a trivalent metal, a Group IA metal, a Group IVB metal, a Group IIB metal, two Group VIB metals and SiO2—Al2O3 as balance. The catalyst comprises 10-40 wt % of Group VIII metal, 5-30 wt % of trivalent metal, 0.1-8 wt % of Group IA metal, 0.1-8 wt % of Group IVB metal, 0.1-30 wt % of Group IIB metal, 5-50 wt % of two Group VIB metals and 10-30 wt % of SiO2—Al2O3, based on the catalyst in terms of oxide, and has 150-300 m2/g of specific surface area, 0.4-0.8 ml/g of pore volume.

Abstract: Disclosed herein are processes for providing a biopolymer from a biomass or source of chitin using ionic liquids. The processes involve contacting a biomass or source of chitin with an ionic liquid to produce a biopolymer comprising solution and precipitating the biopolymer from the solution with supercritical CO2, gaseous CO2, or combinations thereof.

Abstract: A superconducting magnet system for head imaging is disclosed which includes a cryocooler, a high-pressure helium container, a self-excitation heat pipe and a superconducting magnet. A second stage coldhead of the cryocooler is connected to the high-pressure helium container for converting the helium gas in the high-pressure helium container into liquid helium. The self-excitation heat pipe forms a closed cooling loop, and liquid helium in the high-pressure helium container flows circularly in the self-excitation heat pipe. The self-excitation heat pipe cools the superconducting magnet, wherein part of the liquid helium in the self-excitation heat pipe is converted into the helium gas due to the heat disturbance generated by the superconducting magnet, and the helium gas interacts with the liquid helium to generate liquid helium vibration.

Abstract: Method for determining volatile thio-ether compounds in offensive odorous sediment including: pre-treating a sediment sample, extracting volatile thio-ether compounds, separating and purifying the extraction supernatant in a solid phase extraction column, eluting with ethyl acetate, and finally collecting the eluent, which is then concentrated and used for determination by gas chromatography.

Abstract: A device for measuring point diffraction interferometric wavefront aberration having an optical source, an optical splitter, a first light intensity and polarization regulator, a phase shifter, a second light intensity and polarization regulator, an ideal wavefront generator, an object precision adjusting stage, a measured optical system, an image wavefront detection unit, an image precision adjusting stage, and a data processing unit. A method for detecting wavefront aberration of the optical system by using the device is also disclosed.

Abstract: A combined desulfuration, denitration, and demercuration apparatus and method using a semi-dry process in a circulating fluidized bed. The apparatus comprises a flue (2) and a circulating fluidized bed reaction column (8) connected in sequence, the flue (2) being connected to a bottom inlet of the circulating fluidized bed reaction column (8). The flue (2) is further connected to an ozone generation apparatus (1). The ozone distributor (1) feeds ozone in the flue (2) and sends oxidized flue gas into the circulating fluidized bed reaction column (8), so that the SO2, high-valence NOx, and Hg2+ contained in the flue gas are removed through reactions with a Ca-based absorbent under the effect of atomized water in the reaction column (8).

Abstract: The invention provides a first-order phase-transition La(Fe,Si)13-based magnetocaloric material showing small hysteresis loss, and preparation and use thereof. The material has a NaZn13-type structure, is composed of granules with a particle size in the range of 15˜200 ?m and not less than 15 ?m, and is represented by chemical formula La1-xRx(Fe1-p-qCopMnq)13-ySiyA?. The method for preparing the material comprises steps of preparing the material La1-xRx(Fe1-p-qCopMnq)13-ySiyA? by smelting and annealing; and then crushing the material into powder with a particle size in the range of 15˜200 ?m. Without changing the components, a La(Fe,Si)13-based magnetocaloric material showing small hysteresis loss and strong magnetocaloric effect can be obtained by adjusting the particle size within the range of 15˜200 ?m. Utilization of this type of materials in the practical magnetic refrigeration application is of great significance.

Abstract: Methods for reprogramming cells by culturing the cells under a condition that allows formation of a three-dimensional cell aggregate are provided. The cells and cell aggregates obtained using the methods are also provided.

Abstract: The present invention presents a method for manufacturing a semiconductor device structure as well as the semiconductor device structure. Said method comprises: providing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; forming a shallow trench isolation embedded in the first insulating layer and the semiconductor substrate; forming a channel region embedded in the semiconductor substrate; and forming a gate stack stripe on the channel region. Said method further comprises, before forming the channel region, performing a source/drain implantation on the semiconductor substrate. By means of forming the source/drain regions in a self-aligned manner before forming the channel region and the gate stack, said method achieves the advantageous effects of the replacement gate process without using a dummy gate, thereby simplifying the process and reducing the cost.

Abstract: A vanadium dioxide coating for intelligent temperature control is formed by mixing a vanadium dioxide powder slurry, a polymer emulsion, and coating additives, and then coating the mixture onto a substrate. The vanadium dioxide powdery slurry comprises vanadium dioxide composite powders and a dispersion medium, the composite powders comprising vanadium dioxide nanopowders having a chemical composition of V1?xMxO2, and the surface of the vanadium dioxide nanopowders being attached to organic modified long-chain molecules, wherein M is a doped element, and 0?x?0.5. Through using the vanadium dioxide powders and the slurry thereof having an organic modified surface, the coating has higher visible light transmittance, can almost completely screen ultraviolet rays, and simultaneously intelligently adjust infrared rays.

Abstract: A MOSFET structure and a method for manufacturing the same are disclosed. The method comprises: a. providing a substrate (100); b. forming a silicon germanium channel layer (101), a dummy gate structure (200) and a sacrificial spacer (102); c. removing the silicon germanium channel layer and portions of the substrate which are not covered by the dummy gate structure (200) and located under both sides of the dummy gate structure 200, so as to form vacancies (201); d. selectively epitaxially growing a first semiconductor layer (300) on the semiconductor structure to fill bottom and sidewalls of the vacancies (201); and e. removing the sacrificial spacer (102) and filling a second semiconductor layer (400) in the vacancies which are not filled by the first semiconductor layer (300). In the semiconductor structure of the present disclosure, carrier mobility in the channel can be increased, negative effects induced by the short channel effects can be suppressed, and device performance can be enhanced.

Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.