Abstract: A memory device including, in a first metallization level: first electrical interconnection lines parallel to one another, metal portions parallel to one another and each electrically coupling two neighboring first electrical interconnection lines, and wherein a memory element of OxRAM or CBRAM type is arranged at each interface between one of the metal portions and one of the first electrical interconnection lines, and each memory element includes a first electrode arranged against said one of the first electrical interconnection lines, a second electrode arranged against said one of the metal portions, and a memory layer arranged between the first and second electrodes.

Abstract: An image sensor including a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel including: a photosensitive area formed in the semiconductor substrate; a peripheral insulating trench vertically extending in the semiconductor substrate from an upper surface of the semiconductor substrate and laterally delimiting the photosensitive area; a charge collection area; a transfer region located in the semiconductor substrate and vertically extending between the charge collection area and the photosensitive area; and a transfer gate vertically extending in the semiconductor substrate, from the upper surface of the semiconductor substrate and inside of the peripheral insulating trench, deeper than the charge collection area, wherein the transfer region is doped with a same first conductivity type as the photosensitive area and has a doping level lower than that of the photosensitive area.

Abstract: A method comprising the following steps: a) bonding a handle substrate including a base and raised elements to a substrate of interest including a support substrate covered with a thin film, the thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with the raised elements, b) performing an etching with the etchant to remove the material sensitive to the etchant present in the first areas, the second areas being protected during the etching, whereby the thin film is structured in the form of raised patterns, c) separating the handle substrate from the substrate of interest.

Abstract: A method of detection of particles of a first type, called first particles (P1), present in a liquid (L), the liquid also containing particles of a second type distinct from the first type, and called second particles (P2), the liquid (L) being placed in a fluidic chamber, the first particles (P1) each having a density distinct from that of the liquid (L) and from that of each of the second particles (P2), the fluidic chamber having a closed volume occupied entirely by the liquid (L), the detection being achieved by capturing images of the fluidic chamber.

Abstract: The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Abstract: A method for detecting a defect in a structure of a device includes generating, only using the device, a low-frequency signal that makes the structure vibrate, generating a high-frequency signal in the structure, and measuring a vibratory signal caused by the generated low-frequency and high-frequency signals at the same time then adaptively re-sampling these measurements to obtain a re-sampled vibratory signal the power spectrum. The resampling includes a first frequency range [uBFmin; uBFmax] of width larger than 5 Hz that contains 95% of the power of the low-frequency signal, a second frequency range [uHFmin; uHFmax] of width systematically smaller than uBFmin that contains 95% of the power of the low-frequency signal. A defect is signaled in the structure if an additional power lobe is detected outside of the ranges [uBFmin; uBFmax] and [uHFmin; uHFmax].

Abstract: The invention relates to the transmission and reception of non-binary error correcting code words. The transmission method includes a first modulation (56) which implements a set of q sequences comprising q?1 sequences of q?1 chips, each sequence being obtained by circular shifting of a basic pseudo-random sequence, and a partially invariant sequence, invariant to a predetermined subset of circular shifts. The first modulation (56) further implements an association between each code word symbol and a sequence of the set of sequences wherein said finite field GFq has a non-zero primitive element, the symbol zero being associated with said partially invariant sequence and a symbol equal to a power j of the primitive element, j being an integer comprised between 0 and q?2, being associated with a pseudo-random sequence determined by j circular shifts of the basic pseudo-random sequence.

Abstract: The manufacture of a photovoltaic module includes providing a first layer having a skew shape, manufacturing a second layer having a skew shape, and then placing a stack further including photovoltaic cells and at least one encapsulating material in an assembly mold varying between a closure configuration delimiting a predetermined air gap and an opening configuration. In an assembly step, where the closure configuration of the assembly mold is adopted, the temperature within the stack is maintained at an operating temperature comprised between 70° C. and 180° C., and preferably between 80° C. and 150° C., during an assembly period adapted as a function of the at least one encapsulating material so that the at least one encapsulating material undergoes melting at least partially and to create an encapsulating assembly capable of adhering to the plurality of photovoltaic cells and to the first layer and/or to the second layer.

Abstract: This invention relates to a method for preparing a cyclic anhydride such as succinic anhydride and methyl succinic anhydride from an unsaturated carboxylic acid such as acrylic acid or crotonic acid. This method can also be used in the manufacture of food additives, plasticisers, polymers of interest, in particular polyurethanes and elastanes, resins, coatings and pharmaceutical products.

Abstract: The monitoring device is configured for monitoring a converter comprising a first and a second input terminals, two output terminals, a first filter branch connected between the input terminals, a second filter branch connected in parallel with the first branch, two switching branches connected in parallel with the second branch, each switching branch including two switching half-branches connected in series and in an intermediate point forming an output terminal. The monitoring device comprises a detection impedance configured for being connected between the first and the second branches, and a detection module configured for comparing the voltage across the detection impedance with a predefined threshold, then for generating a detection signal as soon as said voltage is greater than said threshold.

Abstract: The invention relates to a method for manufacturing an electric current sensor (SHE) comprising the following steps: a) providing a metal or metal alloy substrate (SBT), b) making a non-through cavity (CVT) in said substrate so that said cavity separates the substrate into two areas (Z1, Z2), c) producing a resistive element (ER) in said cavity (CVT) by additive manufacturing, d) annealing the resulting assembly, e) removing a part of the substrate (SBT) to leave only the resistive element (ER) between the two areas (Z1, Z2) of the substrate, and f) defining, within each area (Z1, Z2), a connection terminal (BCE1, BCE2) to obtain electrodes (PEL, DEL).

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

Abstract: Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

Abstract: A process for producing an organic-inorganic perovskite layer including the following steps: Forming of a layer of inorganic precursors on a substrate, Implementation of a step of close space sublimation from a powder including the organic precursors, whereby the vapors from the layer of organic precursors react with the layer of inorganic precursors and a hybrid organic-inorganic perovskite layer is formed, the powder of organic precursors being obtained by mechanosynthesis by co-grinding at least a first group of particles of a first material and a second group of particles of a second material to form a third group of particles of a third material, the third group of particles forming the powder of organic precursors.

Abstract: A method of porosification of a structure including a base substrate covered with (Al,In,Ga)N/(Al,In,Ga)N mesas, including a porosification step during which the (Al,In,Ga)N/(Al,In,Ga)N mesas are electrochemically porosified, during the porosification step, the structure further comprises, between the mesas or between groups of mesas, electrically-conductive lines covered with an electrically-insulating element.

Abstract: A computer-implemented method for monitoring an executable code having a sequence of software instructions. The method includes acquiring the sequence and generating a first modeling structure of an execution path of the sequence, the first structure having first data groups, each associated with a respective instruction and including identifiers of preceding and following instructions. A second modeling structure of an operation of the sequence is constructed by going through the first groups, the second structure having second data groups, each associated with a respective instruction and including an indicator of possibly belonging to a critical chain. A critical chain corresponds to instructions of a same software function and is computed by solving a subgraph problem with degree restraints, each critical chain corresponding to a subgraph. The method also includes searching for runtime anomaly/anomalies from critical chain(s) determined via the second structure.

Abstract: A method comprising the following steps: a) Bonding a handle substrate including raised elements to a substrate of interest including a support substrate covered with a thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with said elements, b) Placing into contact the obtained assembly with a solution including a hydrophobic agent, to cover the first areas with a hydrophobic film, c) Separating the two substrates, d) Placing into contact the substrate of interest with a solution containing the etchant, whereby the material sensitive to the etchant present in the second areas is etched and raised patterns are formed.

Abstract: The present electronic generator of modulated subcarrier pulse signals includes a module (15) for modulating a pulse train, the position and amplitude of which are controllable, forming a switching signal (S3); a switching module (16), connected to the output of the module (15) for modulating a pulse train, including at least one transistor (22), controlled by said switching signal (S3), a voltage-controlled frequency-locking oscillator (18) having a frequency-locking band around a free oscillation frequency controlled by a control voltage, connected to the output of the switching module (16), the switching module making possible the injection of a periodic pulse signal (S4) having a frequency spectrum including at least one frequency line within said frequency locking band. Such arrangement makes it possible to obtain, at the output of the oscillator, frequency-controlled, phase-controlled and amplitude-controlled modulated subcarrier pulsed signals (S5).

Abstract: An image sensor including a plurality of pixels, each including: a photodetector semiconductor region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band-stop interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, an absorbing stack comprising, in the order from the semiconductor region, a dielectric layer, a silicon layer, and a tungsten layer.

Abstract: A balun including first and second conductive tracks located vertically in line and at a distance from each other and having a same pattern.