Abstract: A device for cooling locally, including a cooling member, a crystal having the capacity to cool via absorption of a near-infrared exciting light signal, an illuminating system intended to deliver an exciting light signal, the crystal having an elongate shape about a longitudinal axis between a near end and a far end and having a closed constant outside cross section and containing a central channel formed, from its far end, over at least some of its length, the cooling member including a rod embedded via a first end into the central channel of the crystal and including a protruding second end that forms a cooling finger.

Abstract: A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C0ij,eq, ?rij,eq and ?aij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency ?r,ref, where ?aij,eq<?r,ref<?rij,eq; determining, for each theoretical resonator, an elementary building block comprising an intermediate resonator R?ij, a parallel reactance Xpij and/or a series reactance Xsij, the intermediate resonator R?ij having a triplet C0ij, ?r,ref and ?a,ref, the parameters C0ij, Xpij and/or Xsij defined so the elementary building block has a triplet: C0ij,eq, ?rij,eq and ?aij,eq; determining the geometrical dimensions of the actual resonators Rij of the filters so they have a capacitance C0ij; producing each actual resonator; associating series and/or parallel reactances with actual resonators in order to form the elementary buildin

Abstract: A method of manufacturing a field effect transistor is provided, including supplying a substrate surmounted by first, second, and third structures, the second structure arranged between the first and the third structures and including at least one first nano-object located away from the substrate, a part of the first nano-object being configured to form a channel area of the transistor; forming electrodes of the transistor including epitaxial growth of a first material to obtain a first continuity of matter made of the first material between the second structure and the first structure, and to obtain a second continuity of matter made of the first material between the second structure and the third structure; and epitaxial growth of a second material, starting from the first material, the second material having a lattice parameter different from a lattice parameter of the first material of the first and the second continuities.

Abstract: A frequency synthesis device with high multiplication rank, including a base frequency generator generating two first base signals of square shape of same frequency and opposite to each other, a first synthesis stage including two first switching power supply oscillators, of which the power supplies are respectively switched by the two first base signals, a second synthesis stage including a second switching power supply oscillator of which the supply is switched by a combination of the output signals of the two first oscillators, the output of the second switching power supply oscillator being filtered by a frequency discriminator circuit realized with an injection locked oscillator.

Abstract: A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 ?m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

Abstract: A calculation device, for the selection and the description of points of interest in at least one image decomposed into a plurality of strips, includes a first module for selecting and indexing points of interest from among a set of points of interest detected in the image, the first module being configured to select, in each strip, at most a fixed number P of candidate points of interest, and associate a unique index with them, a second module for managing calculation of descriptors for the candidate points of interest, the first module being configured to transmit the candidate points of interest and their index to the second module immediately at the end of the processing of K lines of a strip, with K an integer number greater than or equal to 1 and strictly less than the number of lines per strip.

Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.

Abstract: A device including a light source, an image sensor, and a holder defining two positions between the light source and the image sensor. Each position is able to receive an object with a view to its observation. An optical system is placed between the two positions. Thus, when an object is placed in a first position, it may be observed, through the optical system, via a conventional microscopy modality. When an object is placed in the second position, it may be observed via a second lensless imagery modality.

Abstract: The present technology relates to a microalga that is genetically modified by inhibiting the activity of the enzyme ?0-elongase (?0-ELO), which uses palmitic acid, a saturated fatty acid, as substrate and is associated with the production of monogalactosyldiacylglycerol (MGDG). The present technology also relates to a process for culturing the microalga for increased production of triacylglycerols (TAGs) and recovery of the TAGs.

Abstract: The invention relates to an infrared device comprising a resistive element suspended in a cavity formed in a main element, and capable of transmitting infrared radiation when it is fed with an electric current. In particular, the main element is at least partly covered on the outer surface thereof and/or the inner surface thereof with a reflective coating. The use of the reflective coating makes it possible to at least partly contain infrared radiation transmitted by the resistive element in the cavity.

Abstract: The invention relates to a method for fabricating a field-effect transistor (1), comprising the steps of: providing a structure including a first layer of semiconductor material (102), a doped second layer of semiconductor material (103) arranged on top of the first layer of semiconductor material, the composition of which is different from that of the first layer (102), two spacers (120) made of dielectric material arranged on top of the second layer of semiconductor material (103) and separated by a groove (140), said second layer of semiconductor material being accessible at the bottom of said groove (140); etching the second layer of semiconductor material at the bottom of said groove until reaching said first layer of semiconductor material in such a way as to retain the first layer of semiconductor material beneath said spacers on either side of said groove (140); then forming a gate stack (150) in said groove.

Abstract: A method for preparing a nanoporous silica sol-gel matrix containing at least one amine reactant selected from hydroxylamine, methylhydroxylamine, tertbutylhydroxylamine, methoxyamine, tetraethylenepentamine, dicarboxylic acid dihydrazides, particularly adipic acid dihydrazide, and the salts thereof, said method including the following steps: a) synthesising a gel from tetramethoxysilane or from a mixture of tetramethoxysilane and another organosilicon precursor selected from among phenyltrimethoxysilane, phenyltriethoxysilane, a fluoroalkyltrimethoxysilane, a fluoroalkyltriethoxysilane, a chloroalkylmethoxysilane, a chloroalkylethoxysilane, an alkyltrimethoxysilane, an alkyltriethoxysilane, an aminopropyltriethoxysilane and the mixtures thereof, the synthesis being performed in an aqueous medium at a temperature ranging from 10 to 70° C.

Abstract: Process for the treatment of a feedstock containing biomass, the process including a) drying the feedstock at a temperature between 20 and 180° C. for a duration between 5 and 180 minutes, b) torrefaction of the feedstock originating from step a) in order to produce at least one torrefied biomass solid effluent, c) co-grinding the torrefied biomass solid effluent originating from step b), in the presence of at least one solid fossil feedstock in order to obtain a powder.

Abstract: Device for displaying images comprising: a line selector, the line selector and/or the column controller comprising a selection circuit comprising a succession of output channels corresponding to various rows of the matrix, said selection circuit further comprising a succession of shift registers and a succession of switches controlled by at least one configuration word for controlling the respective configurations of the succession of switches of said selection circuit and for placing the switches of said succession of switches respectively in one of said first configuration or second configuration according to the respective states of configuration bits of this configuration word, the first configuration allowing to propagate a signal in the succession of registers, the second configuration allowing to duplicate a signal emitted on the preceding output channel on the given output channel in order to consequently duplicate on a row corresponding to the given output channel a piece of data intended for a row

Abstract: An assembly component for a vacuum chamber, comprising a body and a flange, has a surface configured to press a seal against another mechanical part. The flange is made of an aluminum alloy and the surface is covered with a metal deposit mostly comprising nickel.

Abstract: Nanofibres are provided that are insoluble and swellable in an essentially aqueous effluent, a method for the preparation of these nanofibres and the use of these nanofibres for the extraction from an effluent of metals, in particular metal salts originating from heavy metals, of rare earths, alkali metals, alkaline earth metals or actinides, in the stable or unstable isotopic forms thereof.

Abstract: Improved electronic interface device (120) between an electromagnetic energy harvesting stage (110) provided with an inductance and a load stage (130-140), the electronic interface device being provided to allow tending the charge seen by the harvesting stage towards an optimal charge and thus being able to extract a maximum of energy from this energy harvesting stage (110).

Abstract: A method is provided for etching a dielectric layer disposed on at least one layer based on gallium nitride (GaN), the dielectric layer being formed by a material based on one from SixNy and SixOy, the method including: first etching of the dielectric layer on only part of a thickness to define therein a partial opening and a residual portion situated in line with the opening and having another thickness; implanting ions in line with the opening over a thickness greater than the another thickness to modify a material of the dielectric layer over an entire thickness of the residual portion, and modify a material of the base layer of GaN; removing the residual portion by a second etching, selective of the modified dielectric layer with respect to the nonmodified material and with respect to the modified layer based on GaN; and annealing of the layer based on GaN.

Abstract: A Memory device comprising a matrix of memory cells, the matrix being provided with at least one first column, the device also being provided with a test circuit configured to perform a test phase during a read operation to indicate whether or not the proportion of cells in said column storing the same logical data, particularly a logical ‘1’, is greater than a predetermined threshold.

Abstract: The present invention relates to a method for preparing an electrode comprising a metal substrate, vertically aligned carbon nanotubes and a metal oxide deposited over the entire length of said vertically aligned carbon nanotubes, said method comprising the following consecutive steps: (a) synthesizing, on a metal substrate, a mat of vertically aligned carbon nanotubes; and (b) depositing a metal oxide matrix over the entire height of said vertically aligned carbon nanotube mat via spontaneous reduction at a temperature not exceeding 40° C. The present invention also relates to said electrode and to the uses thereof.