Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Abstract: A method for forming at least one doped region of a transistor includes providing a stack having an insulating layer, an active layer, and a gate pattern having a first lateral flank and removing a first portion of the active layer not overlaid by the gate pattern and extending down to the gate pattern, at the edge of a second portion of the active layer overlaid by the gate pattern, so as to expose an edge of the second portion. The edge extends substantially in a continuation of the lateral flank of the gate pattern. The method also includes forming a first spacer having an L shape and having a basal portion in contact with the insulating layer and a lateral portion in contact with the lateral flank; forming a second spacer on the first spacer; removing the basal portion of the first spacer by selective etching with respect to the second spacer, so as to expose the edge of the second portion; and forming the doped region by epitaxy from the exposed edge.

Abstract: A device for generating a supply or bias voltage and a clock signal for a synchronous digital circuit is provided. The device includes an oscillator circuit comprising a propagation path representative of a critical path of the circuit and which varies with a supply or bias voltage to the oscillator, and outputting a periodic signal, the frequency whereof depends on the propagation path delay; a resistive element; a switched capacitor coupled to the output of the oscillator such that the switching frequency thereof corresponds to the frequency of the periodic signal or to a multiple or divisor of this frequency; and an amplifier circuit outputting, from an output coupled to a power supply input or bias input of the oscillator, a voltage, the amplitude whereof is representative of a difference between the resistance R and the equivalent resistance of the switched capacitor.

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: An OPM sensor fastening system includes a support socket for positioning the sensor, the support socket having a base and a housing for accommodating a portion of the OPM sensor, and a locking part for locking the sensor in the support socket, the locking part having an open base suitable for accommodating the base of the socket, a housing for accommodating a portion of the OPM sensor, and a removable partition suitable for letting the OPM sensor pass. The locking part is configured to press-fittingly cooperate with the support socket so as to blockingly wedge the OPM sensor in the longitudinal position relative to the socket.

Abstract: A system for positioning and maintaining a position of a reference sensor around a magnetoencephalography helmet. The system includes an arch comprising at least one fixing branch for fixing the arch to an MEG helmet, a support plate on which the branch is fixed, a sensor support post fixed to the support plate of the arch; and a locking component for fixing the reference sensor to the post in at least one position defining the position with respect to an MEG helmet.

Abstract: The present description concerns an optical filter intended to be arranged in front of an image sensor comprising a plurality of pixels, the filter comprising, for each pixel, a resonant cavity comprising a first transparent layer, interposed between second and third mirror layers, and a diffraction grating formed in the first layer, wherein at least one of the cavities has a different thickness than another cavity.

Abstract: A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

Abstract: A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level having vias includes providing the first level and a dielectric layer, randomly depositing particles on the dielectric layer, depositing an etching mask on the dielectric layer and the particles, and planarizing, so as to obtain a composite layer including the particles. The method also includes forming a lithographic layer having opening patterns, etching the composite layer through the opening patterns to form mask openings, then etching the dielectric layer through the mask openings, so as to obtain functional via openings and degraded via openings, and filling the via openings so as to form the vias of the interconnection level, said vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

Abstract: A method of designing/manufacturing a static-magnetic-field shimming coil system for magnetic resonance imaging, includes determining an optimal stream function, defined on a reference surface enclosing a region of interest, for each member of a cohort of magnetic resonance imaging subjects; performing a Principal Component Analysis of the stream functions; determining at least one coil wiring pattern defined on the reference surface by discretizing at least a most significant principal component of the stream functions. A static-magnetic-field shimming coil system suitable to be obtained by the method at least one hollow dielectric support element having a cavity containing the region of interest and a surface having a shape corresponding to the reference surface or, where appropriate, one the additional surface; and a set of conducting elements deposed on or affixed to the surface of the dielectric support, forming the or one the coil wiring pattern.

Abstract: A processing system for processing signals from a plurality of transducers of an ultrasonic sensor in order to determine characteristic information relating to an object detected by the ultrasonic sensor is provided. The system comprises a coupling device for transforming the signals received from the transducers into pulses, and a pulse processing unit for determining the characteristic information based on the pulses delivered by the coupling device. The coupling device comprises: a thresholding unit for applying, for each signal received from a transducer, thresholding to a signal derived from the signal received from the transducer and extracting directional information contained in the phase of the derived signal; a transformation unit for transforming the derived signal into pulses containing the phase of the signal, using the information extracted by the thresholding unit.

Abstract: An electromagnetic induction pump includes a tubular internal inductor having internal combs and internal coils between teeth of the internal combs. The inside of the internal inductor forms a cavity. An internal tube is positioned around the internal inductor. A pumping canal allows circulation of a fluid. The canal is between the internal tube and external tube. A tubular external inductor is positioned around the external tube and includes external combs and external coils positioned between teeth of the external combs. An electromagnetic pump includes a movement device for moving the internal combs, and varies the radial clearance between the internal combs and internal tube, having a first part positioned inside the internal inductor and in connection with the internal combs to move them radially, and a second part extending at least partially outside of the internal inductor and connected to the first part to control the first part.

Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.

Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.

Abstract: A method for determining wavefront shapes of a multi-spectral signal light beam from a single signal image acquisition of said multi-spectral signal beam, with a device including an optical assembly made at least of an optical mask and an imaging sensor, notably a matrix imaging sensor, for generating and recording intensity patterns of incident beams, by having these beams reflect on, or propagate through, the optical mask. The optical mask having the optical properties: i) to cause the intensity pattern to depend on the wavefront shape, so that a tilt applied to the wavefront shape results in a displacement amount of the intensity pattern, and ii) to produce uncorrelated intensity patterns over at least one surface area A of the imaging sensor, for a plurality of respective incident monochrome beams of different wavelengths having a same wavefront shape.

Abstract: A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dS into the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dC by introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dS and d<dc, which forms with the growth solution an interface located below the lower plate.

Abstract: An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.

Abstract: A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

Abstract: An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

Abstract: A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.