Patents Assigned to Commissariat a l'Energie Atomique
  • Publication number: 20190252611
    Abstract: The present invention relates to a method for producing a via through a base layer of a microelectronic device, the method including formation of a hole leading to at least one first face of the base layer and filling the hole by at least one first filling material. The method also includes at least partially removing the at least one first filling material over a depth from the first face of the base layer, the depth being strictly less than a thickness dimension of the hole, so as to produce a hollow portion. Further, method includes a second step of at least partially filling the hollow portion by at least one second filling material.
    Type: Application
    Filed: December 20, 2018
    Publication date: August 15, 2019
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Christelle CHARPIN-NICOLLE, Remy Gassilloud, Alain Persico
  • Publication number: 20190248973
    Abstract: The present invention relates to a process for treating a polyamide-based material comprising silica fibers and/or fillers, by impregnation with at least one hydrophobic additive in supercritical CO2. The invention also relates to a polyamide-based material comprising silica fibers and/or fillers and impregnated with at least one hydrophobic additive, obtained via such a process, and to the use thereof as an electrically insulating component in an electrical device, in particular in a circuit breaker.
    Type: Application
    Filed: October 27, 2017
    Publication date: August 15, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Olivier PONCELET, Daniel GETTO
  • Publication number: 20190252353
    Abstract: An integrated circuit including a first chip including a stack of a substrate, of an active layer and of interconnect layers; a second chip including a stack of a substrate, of an active layer and of interconnect layers; an interconnect network for interconnecting the first and second chips. The interconnect layer of the highest metallization level of the first chip includes a power distribution network; the interconnect layer of the highest metallization level of the second chip is without a power distribution network.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 15, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Didier Lattard, Sebastien Thuries
  • Patent number: 10381344
    Abstract: Bipolar transistors and MOS transistors are formed in a common process. A semiconductor layer is arranged on an insulating layer. On a side of the bipolar transistors: an insulating region including the insulating layer is formed; openings are etched through the insulating region to delimit insulating walls; the openings are filled with first epitaxial portions; and the first epitaxial portions and a first region extending under the first epitaxial portions and under the insulating walls are doped. On the side of the bipolar transistors and on a side of the MOS transistors: gate structures are formed; second epitaxial portions are made; and the second epitaxial portions covering the first epitaxial portions are doped.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: August 13, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics (Rousset) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Olivier Weber, Emmanuel Richard, Philippe Boivin
  • Patent number: 10381059
    Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.
    Type: Grant
    Filed: October 15, 2016
    Date of Patent: August 13, 2019
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuzhiyil
  • Patent number: 10382055
    Abstract: A method for compressing digital data, including: extrapolating a value of each sample of data to be compressed as a function of a value of at least one preceding sample, to produce an extrapolated sample; differentiating between each extrapolated sample and the corresponding sample of data to be compressed, to produce a differentiated sample; and deleting redundancy between successive differentiated samples produced by the differentiating stage.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: August 13, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Mathieu Thevenin, Olivier Thomine, Guillaume Latu
  • Patent number: 10381220
    Abstract: The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: August 13, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Mohammed Benwadih, Christine Revenant-Brizard
  • Patent number: 10382240
    Abstract: A transmitter of an FBMC-MIMO system in which, for each FBMC-OQAM modulator associated with a transmission antenna, the symbols of a block to be transmitted are grouped in pairs, the input symbols in a pair being combined to output first and second combined symbols, the combined symbols being input to the FBMC-OQAM modulator. The invention also relates to a receiver including an FBMC-OQAM demodulator and an ML detector from the observables obtained, for each reception antenna. The used ML detection allows for not being affected by intrinsic interference and obtaining a high degree of diversity without increasing the number of antennas.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: August 13, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Jean-Baptiste Dore
  • Patent number: 10381387
    Abstract: Optical imaging device comprising: an array of substantially point light sources, an array of photo-detectors interlaced with the array of light sources, an optical medium of thickness greater than the pitch of the photo-detectors and forming capture and detection surfaces, means for successively switching on and off each of a part of the light sources and reading a part of the photo-detectors receiving rays coming from the switched on source and having undergone reflection against the detection surface while forming an angle of incidence estimated as a function of the optical medium and the element to image.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: August 13, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, IDEMIA IDENTITY & SECURITY FRANCE
    Inventors: Jean-Francois Mainguet, Francois Templier
  • Patent number: 10381478
    Abstract: A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: August 13, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Frederic Boeuf, Olivier Weber
  • Patent number: 10376931
    Abstract: The invention relates to a gel for removing a graffiti from a surface of a solid substrate, consisting of a colloidal solution comprising an inorganic viscosifying agent, at least one solvent, optionally at least one surfactant, and optionally at least one dye and/or pigment. The invention also relates to a method for removing a graffiti from a surface of a solid substrate, wherein the gel is applied to said surface.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: August 13, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Amelie Ludwig, Frederic Goettmann, Fabien Frances
  • Patent number: 10377895
    Abstract: The present invention relates to a conductive polymer material of poly(thio- or seleno-)phene type containing at least two distinct species of counteranion, including a first species which is an anionic form of sulphuric acid, and a second species of counteranion selected from triflate, triflimidate, tosylate, mesylate, perchlorate and hexafluorophosphate. The invention also relates to a process for preparing such a material and the use thereof as conductive film. The invention also targets a substrate coated at least partly by a film of a material as defined above, a device comprising a material as defined above as conductive material, and also the use thereof in the organic electronics, organic thermoelectricity, organic photovoltaic and organic photodetector fields.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: August 13, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Alexandre Carella, Nicolas Massonnet, Jean-Pierre Simonato
  • Patent number: 10379027
    Abstract: A method for identifying a particle contained in a sample, including illuminating the sample using a light source, the light source producing an incident light wave propagating toward the sample, then acquiring, using a matrix-array photodetector, an image of the sample, the sample being placed between the light source and the photodetector such that the matrix-array photodetector is exposed to a light wave that is the result of interference between the incident light wave and a diffraction wave produced by each particle. The method further includes applying a numerical reconstruction algorithm to the image acquired by the photodetector, to estimate a characteristic quantity of the light wave reaching the detector, at a plurality of distances from the detector. The variation in the characteristic quantity as a function of distance allows the particle to be identified.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: August 13, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, HORIBA ABX SAS, IPRASENSE SAS
    Inventors: Cedric Allier, Pierre Blandin, Anais Ali Cherif, Lionel Herve
  • Publication number: 20190243036
    Abstract: A solid-state thermochromic device and method for producing the device, the device including: a stack successively including, from a rear face to a front face exposed to solar radiation: a) a solid substrate of an inorganic material resistant up to a temperature of 550° C.; b) an infrared-reflective layer of an electronically conductive material; c) electronically insulating interface layers; d) an electronically insulating inorganic dielectric layer transparent to infrared radiation, of cerium oxide CeO2, with a thickness between 400 and 900 nm; e) electronically insulating interface layers; f) a layer of an infrared-active thermochromic material, an n-doped VO2 vanadium oxide, and crystallized in a monoclinic or rutile phase, with a thickness between 30 and 50 nm; and g) a solar-protective coating, transparent to infrared radiation.
    Type: Application
    Filed: July 26, 2017
    Publication date: August 8, 2019
    Applicants: COMMISSARIAT A' L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL D'ETUDES SPATIALES
    Inventors: Corinne MARCEL, Frederic SABARY, Xavier VERDALET GUARDIOLA, Stephanie REMAURY
  • Publication number: 20190244813
    Abstract: The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.
    Type: Application
    Filed: August 23, 2017
    Publication date: August 8, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent REBOUD, Jean-Michel HARTMANN, Alexei TCHELNOKOV, Vincent CALVO
  • Publication number: 20190243167
    Abstract: A method of fabricating a modulator of propagation losses and of index of propagation of an optical signal, including: following bonding of a substrate onto an encapsulated semiconductor layer including a first electrode of the modulator and prior to forming a second electrode of the modulator, the method includes: removing a base substrate onto which the encapsulated semiconductor layer is deposited to expose a face of a buried layer of dielectric material, situated under the buried semiconductor layer, without modifying thickness of the buried layer by more than 5 nm; and forming the second electrode is implemented directly on this exposed face of the buried layer such that, once the second electrode has been formed, it is the buried layer which directly forms a dielectric layer interposed between proximal ends of the electrodes of the modulator.
    Type: Application
    Filed: July 27, 2017
    Publication date: August 8, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sylvie MENEZO, Olivier GIRARD
  • Publication number: 20190244869
    Abstract: There is provided a method for producing, on one same plate, at least one first transistor surmounted at least partially on a voltage stressed layer and a second transistor surmounted at least partially on a compression stressed layer, the method including providing a plate including the first and the second transistors; forming at least one stressed nitride-based layer, on the first and the second transistors, the layer being voltage stressed; depositing a protective layer so as to cover a first zone of the layer, the first zone covering at least partially the first transistor and leaving a second zone of the layer uncovered, the second zone at least partially covering the second transistor; and modifying a type of stress of the second zone of the layer by implanting hydrogen-based ions from a plasma in the second zone, such that the second zone of the layer is compression stressed.
    Type: Application
    Filed: December 21, 2018
    Publication date: August 8, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Nicolas POSSEME, Cyrille LE ROYER, Yves MORAND
  • Patent number: 10370315
    Abstract: A method of depolymerizing lignin and to the use of this method in the production of fuels, electronic components, plastic polymers, rubber, medicines, vitamins, cosmetic products, perfumes, foodstuffs, synthetic threads and fibers, synthetic leathers, adhesives, pesticides and fertilizers is provided. It also relates to a method of producing fuels, electronic components, plastic polymers, rubber, medicines, vitamins, cosmetic products, perfumes, foodstuffs, synthetic threads and fibers, synthetic leathers, adhesives, pesticides and fertilizers, including a step of depolymerizing lignin using the method according to the invention.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: August 6, 2019
    Assignee: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Elias Feghali, Thibault Cantat
  • Patent number: 10371711
    Abstract: Linear accelerometer comprising a fixed part, a rotationally moving part in the plane of the accelerometer around an axis of rotation orthogonal to the plane of the accelerometer, the moving part comprising a centre of gravity distinct from the point of intersection of the axis of rotation and the plane of the accelerometer, means forming pivot link between the moving part and the fixed part, means for detecting the displacement of the moving part with respect to the fixed part, means for viscous damping the displacement of the moving part in said plane, said viscous damping means comprising interdigitated combs, at least one first comb on the moving part and at least one second comb on the fixed part (2), the first comb and the second comb being interdigitated.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: August 6, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Bruno Fain, Aboubacar Chaehoi, Philippe Robert
  • Patent number: 10371135
    Abstract: A micropump with a deformable membrane, including: a first chamber, one wall of which includes a first deformable membrane portion and an actuator of the first membrane portion; a second chamber including a second deformable membrane portion and a third chamber, including a third deformable membrane portion, the second chamber and the third chamber being connected together through a first channel, at least one of the second and third chambers being connected through a second channel to the first chamber; each of the second chamber and third chamber including a mechanism forming a detection gauge, but not including an activation mechanism.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: August 6, 2019
    Assignee: Commissariat a l'energie atomique at aux energies alternatives
    Inventors: Yves Fouillet, Olivier Fuchs